圖片僅供參考
MT41J256M8HX-15E:D
IC DRAM 2GBIT PAR 78FBGA
- 製造商
- 製造商。 部分 #MT41J256M8HX-15E:D
- 包
- 資料表
- 有現貨的6368
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Part Status | Obsolete |
| Base Product Number | MT41J256M8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 667 MHz |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (9x11.5) |
| Packaging | Tray |
| Access Time | 13.5 ns |
概述
Description
The MT41J256M8HX-15E:D is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology. It features a density of 2 Gigabytes (GB) and operates on an 8-bit data bus. This chip is built using a 256M x 8 configuration, which means it has 256 million memory cells, organized in 8-bit wide sections.
Key specifications include a maximum data transfer rate of 1600 MT/s (mega transfers per second) and operates at a voltage of 1.5V, which is standard for DDR3 memory. The suffix "-15E" indicates the time latency, with a CAS latency of 15 at 1600 MHz. This memory chip is commonly used in various applications, including personal computers, servers, and embedded systems, where high speed and efficient memory performance are essential. It is available in a BGA (Ball Grid Array) package for easy integration into circuit boards.
Key specifications include a maximum data transfer rate of 1600 MT/s (mega transfers per second) and operates at a voltage of 1.5V, which is standard for DDR3 memory. The suffix "-15E" indicates the time latency, with a CAS latency of 15 at 1600 MHz. This memory chip is commonly used in various applications, including personal computers, servers, and embedded systems, where high speed and efficient memory performance are essential. It is available in a BGA (Ball Grid Array) package for easy integration into circuit boards.
Features
The MT41J256M8HX-15E is a DDR3 SDRAM memory chip from Micron Technology, designed for high-performance computing applications. Here are key features:
1. Density: 2GB (256Mx8).
2. Organization: 8-bit wide data I/O.
3. Speed Grade: Operates at a clock frequency of up to 1.5 GHz (DDR3-1600).
4. Voltage: Operates at a low voltage of 1.5V, with options for 1.35V (DDR3L).
5. Package Type: Available in a 78-ball FBGA package for compact integration.
6. Burst Length: Supports burst lengths of 8 and 4.
7. Features: Includes on-die termination (ODT) and self-refresh capabilities for power efficiency.
8. Applications: Suitable for various applications including PCs, servers, and networking devices.
This chip is optimized for high bandwidth and low power consumption, making it ideal for modern electronic devices that require efficient memory solutions.
1. Density: 2GB (256Mx8).
2. Organization: 8-bit wide data I/O.
3. Speed Grade: Operates at a clock frequency of up to 1.5 GHz (DDR3-1600).
4. Voltage: Operates at a low voltage of 1.5V, with options for 1.35V (DDR3L).
5. Package Type: Available in a 78-ball FBGA package for compact integration.
6. Burst Length: Supports burst lengths of 8 and 4.
7. Features: Includes on-die termination (ODT) and self-refresh capabilities for power efficiency.
8. Applications: Suitable for various applications including PCs, servers, and networking devices.
This chip is optimized for high bandwidth and low power consumption, making it ideal for modern electronic devices that require efficient memory solutions.
Package
The MT41J256M8HX-15E:D is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
Pinout
The MT41J256M8HX-15E:D is a DDR3 SDRAM memory chip with a pin count of 78. This memory device is organized as 256 Meg x 8 bits, providing a total capacity of 2 Gigabits.
Key functions of the pin configuration include:
- Data pins (DQ0-DQ7): Used for bi-directional data transfer.
- Address pins (A0-A12, BA0-BA2): For selecting the memory addresses and bank.
- Control pins (CS, RAS, CAS, WE): For controlling read/write operations and enabling the chip.
- Clock pins (CK, CK#): For synchronization of data transfers.
- Power/ground pins: For supplying power to the chip (VDD, VSS, etc.).
This chip is designed for high-speed data access and is commonly used in various applications, including computing and communication devices.
Key functions of the pin configuration include:
- Data pins (DQ0-DQ7): Used for bi-directional data transfer.
- Address pins (A0-A12, BA0-BA2): For selecting the memory addresses and bank.
- Control pins (CS, RAS, CAS, WE): For controlling read/write operations and enabling the chip.
- Clock pins (CK, CK#): For synchronization of data transfers.
- Power/ground pins: For supplying power to the chip (VDD, VSS, etc.).
This chip is designed for high-speed data access and is commonly used in various applications, including computing and communication devices.
Manufacturer
The manufacturer of the MT41J256M8HX-15E:D is Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor components, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the world's leading manufacturers of DRAM, NAND flash memory, and other memory technologies. The MT41J256M8HX-15E:D is a DDR3 DRAM chip used in various applications, including computers, servers, and mobile devices. Micron serves a diverse range of markets, including consumer electronics, automotive, industrial, and networking.
Application
The MT41J256M8HX-15E:D is a DDR3 SDRAM memory chip commonly used in various applications such as consumer electronics, laptops, desktops, servers, and networking devices. Its high-density and efficient performance make it suitable for gaming consoles, industrial equipment, and automotive electronics, providing reliable data storage and fast access speeds in high-performance computing environments.
Equivalent
The MT41J256M8HX-15E:D chip, a DDR3 SDRAM memory module with a density of 2GB, can have equivalent products such as Hynix H5TQ1G83AFR, Samsung K4B4G0846D-BYK0, and Micron MT41K256M16HA-125. These alternatives should match specifications like speed, density, and pin configuration. Always verify compatibility with your specific application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V16066M1I02
Macronix
-
MX25V16066M2I02
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix