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MT41J256M16HA-107:E

Name: MT41J256M16HA-107:E
Rating: 4.7 (12 reviews)

IC DRAM 4GBIT PARALLEL 96FBGA

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製造商。部分 #MT41J256M16HA-107:E
包 96-FBGA (9x14)
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規格

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR3
MemorySize	4Gb (256M x 16)
MemoryInterface	Parallel
ClockFrequency	933 MHz
AccessTime	20 ns
Voltage-Supply	1.425V ~ 1.575V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	96-TFBGA

概述

Description

MT41J256M16HA-107:E is a Micron DRAM memory device (MT41J256M16HA family). Key points:
- Organization/density: 256M x 16 organization, i.e., 4 Gbits per device.
- Package/variant: advertised as a high-density DRAM chip used in mobile/embedded applications; -E denotes extended temperature option.
- Speed/grade: the “-107” suffix indicates the speed grade; the exact timing/clock specs are in the datasheet.
- Application: used as a component in memory subsystems for devices requiring high bandwidth in a small form factor.
Note: exact electrical specs (interface type, voltage, CL/tRCD/tRP, banks, timing, and packaging) vary by revision and must be confirmed in the Micron MT41J256M16HA-107:E datasheet for your specific lot and operating conditions.

Features

MT41J256M16HA-107:E is Micron 4 Gb DDR3L mobile SDRAM. Key features:
- Density/organization: 4 Gb total; 256M × 16 data width
- Interface: DDR3 SDRAM, 16-bit I/O
- Banks: 8 banks (DDR3 architecture)
- Speed: up to DDR3-1066 MT/s (PC3-1066)
- Voltage: 1.35 V nominal (DDR3L) with low‑power modes
- Features: synchronous operation, burst length 8, multi-bank interleaving, auto refresh, power-down modes
- Packaging/grade: E suffix indicates lead-free; temperature range varies by grade (often -40 °C to 85 °C)

Package

96-ball FBGA package (FBGA-96, fine-pitch).

Pinout

- Pin count: 96 pins (96-ball FBGA).
- Function: DDR3 SDRAM memory IC with 256M x 16 organization (4Gb total), 16-bit data bus, typically 1.5V, speed grade ~1066 MT/s (PC3-8500). Used as a memory device in modules.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM and NAND flash).

Application

MT41J256M16HA-107:E is a Micron DDR3 SDRAM device (4 Gb per die, x16). Typical application areas: main system memory in desktops, notebooks, and servers; DRAM components for memory modules (DIMMs/SODIMMs); networking equipment (routers, switches); industrial/commercial embedded systems; consumer electronics needing high-density DDR3 DRAM. Used wherever DDR3 memory is required.

Equivalent

MT41J256M16HA-107:E is Micron’s 4‑Gb DDR3 SDRAM, 256M × 16 (512 MB), DDR3, 1.5 V. Equivalents (4‑Gb, 256M×16 DDR3 parts) from other vendors include:
- Samsung: K4B4G1646D (K4B4G1646 family)
- SK hynix: H5TQ2G63EFR
- Nanya: NT4G64M16HP
Note: exact 1:1 cross depends on speed grade (-107) and package; consult cross-reference guides/distributors for precise matches.