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MT40A512M16TB-062E:R
IC DRAM 8GBIT PARALLEL 96FBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT40A512M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13) |
| Packaging | Bulk |
| Access Time | 19 ns |
概述
Description
The MT40A512M16TB-062E:R is a DDR4 DRAM memory module manufactured by Micron Technology. It features a capacity of 8GB (512 Meg x 16 bits) and operates at a speed of 2400 MT/s (Mega Transfers per second). This memory chip is designed for high-performance applications, such as servers and advanced computing systems, supporting a range of features such as low power consumption, improved data transfer rates, and enhanced reliability.
The "R" at the end of the part number typically indicates that it is a RoHS-compliant part, meaning it is free from hazardous substances. The "TB" designation often refers to the memory's organization and packaging format. Overall, the MT40A512M16TB-062E:R module is suitable for applications requiring efficient, high-capacity memory solutions in a compact form factor.
The "R" at the end of the part number typically indicates that it is a RoHS-compliant part, meaning it is free from hazardous substances. The "TB" designation often refers to the memory's organization and packaging format. Overall, the MT40A512M16TB-062E:R module is suitable for applications requiring efficient, high-capacity memory solutions in a compact form factor.
Features
The MT40A512M16TB-062E is a DDR4 SDRAM memory chip manufactured by Micron Technology. Here are its key features:
- Capacity: 8GB (512 Meg x 16 bits)
- Type: DDR4 SDRAM
- Speed: Operates at a data rate of 2400 MT/s (megatransfers per second)
- Voltage: 1.2V, which contributes to lower power consumption compared to previous DDR generations.
- Organization: 512M x 16 configuration, suitable for various applications in consumer and enterprise devices.
- Package: 78-ball FBGA (Fine Ball Grid Array) for compact integration.
- Latency: Offers improved latency performance, enhancing overall system responsiveness.
- Applications: Ideal for laptops, desktops, servers, and high-performance computing systems.
This chip is designed for reliability, efficiency, and performance, making it suitable for modern computing needs.
- Capacity: 8GB (512 Meg x 16 bits)
- Type: DDR4 SDRAM
- Speed: Operates at a data rate of 2400 MT/s (megatransfers per second)
- Voltage: 1.2V, which contributes to lower power consumption compared to previous DDR generations.
- Organization: 512M x 16 configuration, suitable for various applications in consumer and enterprise devices.
- Package: 78-ball FBGA (Fine Ball Grid Array) for compact integration.
- Latency: Offers improved latency performance, enhancing overall system responsiveness.
- Applications: Ideal for laptops, desktops, servers, and high-performance computing systems.
This chip is designed for reliability, efficiency, and performance, making it suitable for modern computing needs.
Package
The MT40A512M16TB-062E:R is a DDR4 SDRAM memory chip packaged in a 78-ball FBG (Fine-pitch Ball Grid Array) form factor. This package type is designed for high-density applications and offers improved thermal performance and manufacturability.
Pinout
The MT40A512M16TB-062E:R is a DRAM memory chip with a pin count of 96. It is a DDR3 SDRAM device, specifically designed for high-performance applications. The chip features a 512Mb capacity organized as 16 bits wide, with a configuration of 32 banks.
Key functions include data storage, data access, and refresh operations. It operates at a clock frequency of 800 MHz, providing a data rate of 1600 MT/s. The device supports various operating modes, including burst modes, and has power-saving features to enhance efficiency. The chip is commonly used in applications such as computing, networking, and consumer electronics where high-speed memory is required.
For detailed pin functions, you would refer to the manufacturer's datasheet.
Key functions include data storage, data access, and refresh operations. It operates at a clock frequency of 800 MHz, providing a data rate of 1600 MT/s. The device supports various operating modes, including burst modes, and has power-saving features to enhance efficiency. The chip is commonly used in applications such as computing, networking, and consumer electronics where high-speed memory is required.
For detailed pin functions, you would refer to the manufacturer's datasheet.
Manufacturer
The manufacturer of the MT40A512M16TB-062E:R is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron operates in the semiconductor industry, focusing on innovative memory technologies for a range of applications, including computing, mobile devices, and data centers. The company plays a significant role in advancing memory and storage solutions, contributing to the growth of sectors such as artificial intelligence, cloud computing, and automotive electronics.
Application
The MT40A512M16TB-062E:R is a 4GB DDR3 SDRAM memory chip commonly used in various applications, including laptops, desktop computers, servers, and networking equipment. It is suitable for high-performance computing tasks, gaming systems, and embedded systems where efficient memory performance and reliability are critical. Its low power consumption also makes it ideal for mobile devices and applications requiring energy-efficient solutions.
Equivalent
The MT40A512M16TB-062E:R chip is a DDR3 SDRAM memory component. Equivalent products include other DDR3 SDRAM chips with similar capacity (4GB), organization (512M x 16), and speed grades (e.g., DDR3-1600). Look for alternatives from manufacturers like Samsung (K4B4G1646E), Hynix (H5TQ4G83AFR), or Micron's other DDR3 offerings. Always verify compatibility with your specific application.
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