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MT40A512M16LY-075:E
IC DRAM 8GBIT PARALLEL 96FBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT40A512M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.33 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Packaging | Tray |
概述
Description
The MT40A512M16LY-075:E is a DRAM memory chip manufactured by Micron Technology. It is a part of the DDR4 (Double Data Rate 4) SDRAM family, designed for high-performance computing applications. This specific model features a density of 512 Megabits (Mb) per chip and is organized as 16 bits wide, making it suitable for a variety of memory configurations in devices such as servers, desktops, and laptops.
Key specifications include a data rate of 3200 MT/s (megatransfers per second) and a voltage supply of 1.2V, which enhances energy efficiency compared to earlier DDR generations. The "075" in its part number indicates its speed of 750 MHz, while the "E" signifies that it is an "Extended" version, typically meaning it is optimized for specific applications or environments.
Overall, the MT40A512M16LY-075:E is recognized for its reliability, performance, and efficiency, making it a popular choice in modern electronic systems that require robust memory solutions.
Key specifications include a data rate of 3200 MT/s (megatransfers per second) and a voltage supply of 1.2V, which enhances energy efficiency compared to earlier DDR generations. The "075" in its part number indicates its speed of 750 MHz, while the "E" signifies that it is an "Extended" version, typically meaning it is optimized for specific applications or environments.
Overall, the MT40A512M16LY-075:E is recognized for its reliability, performance, and efficiency, making it a popular choice in modern electronic systems that require robust memory solutions.
Features
The MT40A512M16LY-075:E is a 4GB DDR3 SDRAM memory chip produced by Micron Technology. It features a 512 Meg x 16 organization, allowing for efficient data storage and retrieval. Operating at a maximum clock speed of 1333 MT/s (megatransfers per second), it supports a range of applications including desktops, laptops, and servers.
Key features include:
- Voltage: Operates at 1.5V with a low power option.
- Data Rate: DDR3 provides a higher data rate compared to earlier DDR2 technology.
- Package: Typically available in a 78-ball BGA (Ball Grid Array) package, facilitating compact designs.
- Latency: Offers improved latency characteristics, enhancing overall system performance.
- Temperature Range: Supports standard commercial temperature range.
This chip is designed for high reliability and performance, making it suitable for various computing applications, including high-performance computing and graphics-intensive tasks.
Key features include:
- Voltage: Operates at 1.5V with a low power option.
- Data Rate: DDR3 provides a higher data rate compared to earlier DDR2 technology.
- Package: Typically available in a 78-ball BGA (Ball Grid Array) package, facilitating compact designs.
- Latency: Offers improved latency characteristics, enhancing overall system performance.
- Temperature Range: Supports standard commercial temperature range.
This chip is designed for high reliability and performance, making it suitable for various computing applications, including high-performance computing and graphics-intensive tasks.
Package
The MT40A512M16LY-075:E is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format.
Pinout
The MT40A512M16LY-075:E is a DDR3 SDRAM memory chip with a total of 96 pins. It is organized as 512 Meg x 16 bits. The chip operates with a data rate of 1600 MT/s, and its functions include data storage, memory management, and interfacing with the memory controller. The device supports standard DDR3 features such as burst lengths, 8 banks, and is designed for low power consumption, with a typical operating voltage of 1.5V. The part is commonly used in applications like computers, servers, and embedded systems where high-speed memory access is crucial.
Manufacturer
The manufacturer of the MT40A512M16LY-075:E is Micron Technology, Inc. Micron is a leading American company that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various markets, including consumer electronics, computing, networking, and data centers. The company is known for its innovation in memory technology and plays a significant role in the global semiconductor industry.
Application
The MT40A512M16LY-075:E is a DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, networking equipment, industrial automation, automotive systems, and embedded systems. Its high-density, low-power design makes it suitable for laptops, tablets, and other devices requiring efficient memory performance.
Equivalent
The MT40A512M16LY-075:E chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646E
3. Micron MT41K256M16HA-125
Ensure compatibility in terms of specifications, voltage, and timing parameters when considering alternatives.
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646E
3. Micron MT41K256M16HA-125
Ensure compatibility in terms of specifications, voltage, and timing parameters when considering alternatives.
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