MT40A512M16LY-062E AIT:E

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MT40A512M16LY-062E AIT:E

DRAM DDR4 8G 512MX16 FBGA

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概述

Description

The MT40A512M16LY-062E AIT:E is a type of DRAM memory chip produced by Micron Technology, specifically designed for high-performance applications. It is a DDR4 SDRAM component with a density of 512 Megabits (64 Megabytes) organized in a 16-bit wide interface. The chip operates at a clock speed of 1600 MT/s (million transfers per second) and supports a voltage of 1.2V, which contributes to lower power consumption compared to previous generations.
This memory chip is suitable for various applications, including servers, networking, and high-performance computing, where speed and efficiency are crucial. The 'AIT:E' designation indicates that it is AIT (Automated Industrial Technology) compliant and is likely optimized for industrial environments.
Overall, the MT40A512M16LY-062E AIT:E is characterized by its reliability, speed, and efficiency, making it a valuable component in modern electronic systems.

Features

The MT40A512M16LY-062E AIT:E is a DDR4 SDRAM memory chip manufactured by Micron Technology. Key features include:
1. Density: 8 Gigabits (1 GB) per die, based on a 512M x 16 configuration.
2. Data Rate: Supports a data rate of up to 2400 MT/s, enabling high-speed data transfer.
3. Voltage: Operates at a supply voltage of 1.2V, which contributes to lower power consumption compared to earlier DDR generations.
4. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating easier integration into compact designs.
5. Latency: Offers low latency, enhancing performance in various applications.
6. Applications: Suitable for use in a wide range of devices, including PCs, servers, and embedded systems.
This memory chip is designed for efficient performance in high-bandwidth environments, making it ideal for applications requiring robust data processing capabilities.

Package

The MT40A512M16LY-062E AIT:E is a DRAM memory chip from Micron Technology, typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for high-density, space-efficient applications in computing and mobile devices.

Pinout

The MT40A512M16LY-062E AIT:E is a DDR3 SDRAM memory chip manufactured by Micron. It comes in a 78-ball FBGA (Fine Ball Grid Array) package. The pin count is 78 balls, which provide various functions for data, address, control, and power management.
Key functions include:
- Data Pins (DQ): Transfer data to and from the memory (16 bits wide).
- Address Pins (A): Specify the memory location for read/write operations.
- Control Pins: Includes signals like Chip Select (CS), RAS, CAS, and WE for managing memory operations.
- Clock Pin (CK): Synchronizes data transfers.
- Power Pins (VDD/VSS): Supply power to the chip and ground connections.
This device operates at a frequency of 1.6 GHz (DDR3-1600) and is intended for high-performance applications.

Manufacturer

The manufacturer of the MT40A512M16LY-062E AIT:E is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in the development and production of DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets including computing, mobile, automotive, and industrial sectors. The company focuses on innovation and technology advancement to meet the increasing demands for memory and storage in various applications, from consumer electronics to enterprise solutions. Micron is also known for its commitment to sustainability and responsible manufacturing practices.

Application

The MT40A512M16LY-062E AIT:E is a DDR4 DRAM memory chip used in various applications, including servers, data centers, high-performance computing, networking equipment, and consumer electronics. Its high-speed performance and capacity make it suitable for tasks requiring fast data processing and large memory storage, such as artificial intelligence, machine learning, and big data analytics.

Equivalent

The MT40A512M16LY-062E AIT:E chip is a 4GB DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646C
3. Micron MT41K512M16HA
4. Nanya NT5CB256M8HN-DI
Always verify specifications such as speed, timing, and voltage before replacement.

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