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MT40A512M16LY-062E AAT:E
DRAM DDR4 8G 512MX16 FBGA
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概述
Description
The MT40A512M16LY-062E is a DRAM memory chip produced by Micron Technology, specifically designed for use in various electronic applications. It features a 512Mb (megabit) capacity, organized as 16 bits x 32, making it suitable for high-performance computing needs. The "LY" designation indicates its specific configuration and performance characteristics, while "062E" denotes the speed grade, indicating that it operates at a speed of 6.2 ns.
This chip utilizes DDR3 (Double Data Rate 3) technology, allowing for higher data transfer rates compared to earlier DRAM types. It is commonly used in consumer electronics, telecommunications, and industrial applications due to its reliability and efficiency.
The "AAT" in the part number refers to the Advanced Thermal Management features that help in maintaining optimal performance and longevity of the chip under varying temperature conditions. Overall, the MT40A512M16LY-062E is a versatile and efficient memory solution for modern electronic systems.
This chip utilizes DDR3 (Double Data Rate 3) technology, allowing for higher data transfer rates compared to earlier DRAM types. It is commonly used in consumer electronics, telecommunications, and industrial applications due to its reliability and efficiency.
The "AAT" in the part number refers to the Advanced Thermal Management features that help in maintaining optimal performance and longevity of the chip under varying temperature conditions. Overall, the MT40A512M16LY-062E is a versatile and efficient memory solution for modern electronic systems.
Features
The MT40A512M16LY-062E is a DDR3 SDRAM memory chip produced by Micron Technology. Key features include:
- Density: 512 Megabits (Mb), organized as 16 bits x 32, providing efficient data handling.
- Speed: Operates at a clock speed of 1866 MT/s (Mega-transfers per second), enhancing overall performance.
- Voltage: Requires a supply voltage of 1.35V, which contributes to lower power consumption compared to previous DDR generations.
- Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, suitable for compact designs.
- Architecture: Utilizes a synchronous dynamic random-access memory (SDRAM) architecture, ideal for various applications including consumer electronics and computing devices.
- Features: Supports features such as burst lengths of 4 or 8, and an asynchronous reset.
This chip is designed for high-performance and low-power applications, making it suitable for modern computing and embedded systems.
- Density: 512 Megabits (Mb), organized as 16 bits x 32, providing efficient data handling.
- Speed: Operates at a clock speed of 1866 MT/s (Mega-transfers per second), enhancing overall performance.
- Voltage: Requires a supply voltage of 1.35V, which contributes to lower power consumption compared to previous DDR generations.
- Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, suitable for compact designs.
- Architecture: Utilizes a synchronous dynamic random-access memory (SDRAM) architecture, ideal for various applications including consumer electronics and computing devices.
- Features: Supports features such as burst lengths of 4 or 8, and an asynchronous reset.
This chip is designed for high-performance and low-power applications, making it suitable for modern computing and embedded systems.
Package
The MT40A512M16LY-062E AAT:E is a DDR3 SDRAM memory chip typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type provides a compact footprint suitable for various electronic applications, ensuring efficient thermal management and electrical performance.
Pinout
The MT40A512M16LY-062E AAT is a 4Gb DDR3 SDRAM (Dynamic Random Access Memory) device with a pin count of 78 pins. It is organized as 512 Meg x 16 bits and operates at a frequency of 800 MT/s (mega-transfers per second) with a data rate of 1600 Mbps.
The key functions of this memory chip include data storage, retrieval, and buffering for computational applications. It supports various features such as burst read/write operations, multiple bank operations, and low power consumption modes. The device operates on a voltage supply of 1.5V and provides functionalities for both synchronous operations and data integrity checks.
For specific pin configurations and functionalities, refer to the manufacturer's datasheet.
The key functions of this memory chip include data storage, retrieval, and buffering for computational applications. It supports various features such as burst read/write operations, multiple bank operations, and low power consumption modes. The device operates on a voltage supply of 1.5V and provides functionalities for both synchronous operations and data integrity checks.
For specific pin configurations and functionalities, refer to the manufacturer's datasheet.
Manufacturer
The manufacturer of the MT40A512M16LY-062E AAT:E is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and 3D XPoint technology. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, networking, and automotive sectors. The company is known for its innovative products and commitment to advancing memory technology, making it a key player in the development of high-performance memory solutions for various applications.
Application
The MT40A512M16LY-062E AAT:E is a DRAM memory chip often used in applications such as mobile devices, consumer electronics, automotive systems, and industrial equipment. Its high density and energy efficiency make it suitable for smartphones, tablets, and laptops, as well as in IoT devices and embedded systems where performance and low power consumption are crucial.
Equivalent
The MT40A512M16LY-062E AAT:E chip is a DDR3 SDRAM memory chip. Equivalent products may include:
1. Hynix H5TQ1G83AFR
2. Samsung K4B4G1646E-BCK0
3. Micron MT41K512M16HA-125
Check specifications for exact compatibility and performance.
1. Hynix H5TQ1G83AFR
2. Samsung K4B4G1646E-BCK0
3. Micron MT41K512M16HA-125
Check specifications for exact compatibility and performance.
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