MT40A512M16HA-083E IT:A

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MT40A512M16HA-083E IT:A

DRAM DDR4 8G 512MX16 FBGA

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概述

Description

The MT40A512M16HA-083E is a DDR4 SDRAM memory chip designed by Micron Technology. It is a 4GB (512Mb x 16) DRAM module, featuring a 16-bit data width and a double data rate (DDR) interface, enabling high-speed data transfer compared to previous generations.
This chip operates at a voltage of 1.2V, which contributes to lower power consumption, making it suitable for energy-efficient applications. The part number indicates the speed grade, with '083E' suggesting a maximum data rate of 2400 MT/s, which is typical for DDR4 memory.
This memory component is commonly used in various applications, including computers, servers, and embedded systems, providing reliable performance and stability. Its compact design and compatibility with standard DDR4 interfaces make it a versatile choice for modern electronic devices requiring efficient memory solutions.
Overall, the MT40A512M16HA-083E is a key component in advancing computing performance and efficiency in various technological applications.

Features

The MT40A512M16HA-083E IT:A is a DRAM memory chip manufactured by Micron Technology. It features:
1. Type: DDR4 SDRAM
2. Density: 8GB (512M x 16 bits)
3. Organization: 512 Meg x 16 I/O
4. Speed: Operates at 2133 MT/s (megatransfers per second)
5. Voltage: 1.2V (low voltage for reduced power consumption)
6. Packaging: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array)
7. ECC: Supports Error-Correcting Code for data integrity
8. Temperature Grade: Industrial temperature range (-40°C to +95°C)
9. Features: It has features like on-die termination (ODT), burst lengths of 8 or 16, and supports various refresh modes.
This chip is suitable for applications requiring high-performance memory in industrial environments, such as embedded systems and telecommunications.

Package

The MT40A512M16HA-083E IT:A is a DRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This compact package type is designed for high-density applications, providing efficient thermal management and space-saving benefits in electronic devices.

Pinout

The MT40A512M16HA-083E IT:A is a 4Gb DRAM memory device with a total of 84 pins. This memory device operates as a DDR3 SDRAM with a data width of 16 bits and supports a maximum I/O frequency of 1066 MT/s.
The key functions of the pins include power supply (VDD, VSS), data inputs/outputs (DQ), address inputs (A), command inputs (CK, CKE, CS), and control signals for various operations such as read/write, burst mode, and refresh cycles. The device is designed for high-performance applications and is commonly used in computing and communication systems.

Manufacturer

The manufacturer of the MT40A512M16HA-083E IT:A is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and based in Boise, Idaho, Micron serves a wide range of markets, such as computing, mobile, automotive, and IoT, providing innovative memory solutions that enhance performance and efficiency in electronic devices. The company is recognized for its focus on research and development to advance memory technologies.

Application

The MT40A512M16HA-083E IT:A is a 8Gb DDR4 SDRAM memory chip primarily used in applications like data centers, servers, high-performance computing, networking equipment, and consumer electronics. It supports advanced features such as error correction and low power consumption, making it suitable for tasks requiring efficient data processing and reliability, including cloud computing, artificial intelligence, and machine learning.

Equivalent

The MT40A512M16HA-083E IT:A chip is a DDR4 SDRAM memory chip. Equivalent products can include similar DDR4 memory chips from other manufacturers with comparable specifications, such as:
- Samsung K4AAG085WB-BCRC
- Micron MT40A512M16HA-083E (different grade)
- Hynix H5AN8G6NAFR-TFC
Ensure compatibility in terms of speed, voltage, and density when considering alternatives.

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