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MT40A4G4VA-062E:B
IC DRAM 16GBIT PARALLEL 78FBGA
- 製造商
- 製造商。 部分 #MT40A4G4VA-062E:B
- 包 78-TFBGA
- 資料表
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規格
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 16Gb (4G x 4) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.6 GHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 19 ns |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 78-TFBGA |
概述
Description
MT40A4G4VA-062E:B is a Micron DDR4 SDRAM device. It belongs to the MT40A4G4VA family and represents a single memory die with 4 Gbit capacity and an x4 data width, intended for use on memory modules (DIMMs, LRDIMMs) in servers and high-end systems. The -062E code encodes a specific speed/voltage grade within Micron’s naming scheme, while the trailing :B denotes a particular packaging/industrial option. It operates as a DDR4 part (1.2V I/O) and is used with other similar dies to form larger module capacities. For exact timings, voltage, density, organization, and packaging details, refer to the Micron MT40A4G4VA datasheet.
Features
MT40A4G4VA-062E:B is a Micron DDR4 SDRAM device. Key features:
- Density/width: 4 Gb total per device, organized as x4
- Voltage: 1.2 V nominal
- Prefetch/I/O: 8n prefetch with burst length 8
- Speed: DDR4 data rates up to about 2400 MT/s (speed grade dependent)
- Banks: 16 banks in 4 bank groups (DDR4 architecture)
- Synchronous operation with clock; supports standard DDR4 timing and refresh
- Power/low-power features: auto refresh, self-refresh, partial array refresh, and deep power-down
- Timing/impedance: ZQ calibration for I/O impedance control
- Packaging: typically a BGA die for memory subsystems
- Temperature ranges: commercial and industrial variants available (e.g., 0–85°C or -40 to 85°C)
Note: Exact timing values, supported speeds, and package details depend on the specific revision (-062E:B) and should be confirmed in the official datasheet for precise figures.
- Density/width: 4 Gb total per device, organized as x4
- Voltage: 1.2 V nominal
- Prefetch/I/O: 8n prefetch with burst length 8
- Speed: DDR4 data rates up to about 2400 MT/s (speed grade dependent)
- Banks: 16 banks in 4 bank groups (DDR4 architecture)
- Synchronous operation with clock; supports standard DDR4 timing and refresh
- Power/low-power features: auto refresh, self-refresh, partial array refresh, and deep power-down
- Timing/impedance: ZQ calibration for I/O impedance control
- Packaging: typically a BGA die for memory subsystems
- Temperature ranges: commercial and industrial variants available (e.g., 0–85°C or -40 to 85°C)
Note: Exact timing values, supported speeds, and package details depend on the specific revision (-062E:B) and should be confirmed in the official datasheet for precise figures.
Package
96-ball FBGA (Fine-PBGA) package.
Pinout
- Pin count: 96-ball FBGA package
- Function: Micron MT40A4G4VA-062E:B is a DDR4 SDRAM memory device (4 Gb, x4 organization) used as system memory (1.2V operation).
- Function: Micron MT40A4G4VA-062E:B is a DDR4 SDRAM memory device (4 Gb, x4 organization) used as system memory (1.2V operation).
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND Flash, NOR Flash) for computers, servers, mobile, and embedded markets; one of the world’s leading memory manufacturers.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND Flash, NOR Flash) for computers, servers, mobile, and embedded markets; one of the world’s leading memory manufacturers.
Application
MT40A4G4VA-062E:B is a high-density mobile DRAM. Applications include:
- Mobile devices (smartphones, tablets, wearables)
- Embedded systems and IoT
- Automotive infotainment and instrumentation
- Thin-and-light laptops
- Consumer electronics (set-top boxes, cameras)
- Industrial and networking equipment needing compact, low-power memory
- Mobile devices (smartphones, tablets, wearables)
- Embedded systems and IoT
- Automotive infotainment and instrumentation
- Thin-and-light laptops
- Consumer electronics (set-top boxes, cameras)
- Industrial and networking equipment needing compact, low-power memory
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