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MT40A4G4NRE-083E:B
IC DRAM 16GBIT PARALLEL 78FBGA
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- 製造商。 部分 #MT40A4G4NRE-083E:B
- 包 78-TFBGA
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規格
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 16Gb (4G x 4) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.2 GHz |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 78-TFBGA |
概述
Description
MT40A4G4NRE-083E:B is a Micron DDR3 SDRAM memory device. Key points:
- Type: unbuffered DDR3 DRAM, density 4 Gbit per die, organization x4 (4-bit data width).
- Family: MT40A4G4NRE; used in high-density memory components for DIMMs, SO-DIMMs, and embedded memory.
- Speed/voltage: indicated by the suffix -083E:B; exact speed grade (MT/s) and voltage depend on the revision (commonly around 1.5 V, with DDR3L variants at lower voltage).
- Features: standard DDR3 timing, multi-bank architecture, requires JEDEC-compliant initialization and refresh.
- What to do: consult the MT40A4G4NRE-083E:B datasheet for precise timings (tRCD, tRP, tRAS, tRC), voltage, temperature range, and packaging.
If you’re integrating or replacing parts, use the exact datasheet revision referenced by the full part number to ensure correct electrical and timing compatibility.
- Type: unbuffered DDR3 DRAM, density 4 Gbit per die, organization x4 (4-bit data width).
- Family: MT40A4G4NRE; used in high-density memory components for DIMMs, SO-DIMMs, and embedded memory.
- Speed/voltage: indicated by the suffix -083E:B; exact speed grade (MT/s) and voltage depend on the revision (commonly around 1.5 V, with DDR3L variants at lower voltage).
- Features: standard DDR3 timing, multi-bank architecture, requires JEDEC-compliant initialization and refresh.
- What to do: consult the MT40A4G4NRE-083E:B datasheet for precise timings (tRCD, tRP, tRAS, tRC), voltage, temperature range, and packaging.
If you’re integrating or replacing parts, use the exact datasheet revision referenced by the full part number to ensure correct electrical and timing compatibility.
Package
FBGA-96 (Fine-pitch Ball Grid Array, 96-ball package).
Pinout
- Pin count: 84 pins (FBGA-84).
- Function: Micron MT40A4G4NRE-083E:B is a 4Gbit x4 DDR3 SDRAM device (synchronous DRAM) with typically 8 banks, providing DQ[3:0] data I/O plus DQS/DM, address/command lines, bank address, and clock inputs for system memory use.
- Function: Micron MT40A4G4NRE-083E:B is a 4Gbit x4 DDR3 SDRAM device (synchronous DRAM) with typically 8 banks, providing DQ[3:0] data I/O plus DQS/DM, address/command lines, bank address, and clock inputs for system memory use.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: A US-based multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, SSDs, and related components).
- What kind of company: A US-based multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, SSDs, and related components).
Application
Typical applications for MT40A4G4NRE-083E:B (DDR4 SDRAM) include:
- Server and data-center memory (ECC RDIMM/LRDIMM)
- Enterprise storage controllers and arrays
- High-performance workstations and HPC nodes
- Networking/telecom equipment (switches, routers)
- Embedded/industrial systems requiring reliable DDR4 DRAM
- Server and data-center memory (ECC RDIMM/LRDIMM)
- Enterprise storage controllers and arrays
- High-performance workstations and HPC nodes
- Networking/telecom equipment (switches, routers)
- Embedded/industrial systems requiring reliable DDR4 DRAM
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