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MT40A4G4JC-062E:E
IC DRAM 16GBIT POD 78FBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT40A4G4 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 4G x 4 |
| Memory Interface | POD |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (9x11) |
| Packaging | Box |
| Access Time | 19 ns |
概述
Description
MT40A4G4JC-062E:E is a Micron DDR3 SDRAM memory device. Specifically, it’s a 4‑gigabit density DRAM with a 4‑bit-wide I/O (x4) per die. It’s used as a building block on memory modules (DIMMs/SODIMMs) to assemble wider data paths and higher capacities. The “062E” suffix denotes a particular speed grade and packaging; exact timings, voltage, and thermal specs depend on the grade. Typical DDR3 operation is at about 1.5V (1.35V for DDR3L variants). Applications include servers, desktops, and laptops via memory modules that combine multiple chips. For precise electrical and timing details (capacity per die, timings, voltages, temperature range), consult the MT40A4G4JC-062E:E datasheet from Micron.
Features
Here are the typical features of Micron MT40A4G4JC-062E:E (DDR3 SDRAM device):
- Type: DDR3 SDRAM
- Density/Organization: 4 Gb per die, x4 data width
- Banks: 8 banks
- Burst: Burst length 8
- Voltage: 1.5 V nominal
- Speed grade: supports standard DDR3 speeds (up to around 1066 MT/s; PC3-8500 class; some variants may reach higher per grade)
- JEDEC compliant
- Timing features: standard DDR3 timing with typical CL/RCD/RAS characteristics
- Refresh: on-die self-refresh with ZQ calibration; partial array self-refresh
- Thermal: on-die thermal sensor
- Packaging: standard Micron FBGA (ball grid array) form factor
- Temperature grades: commercial and industrial variants available (e.g., 0°C to 85°C and/or -40°C to 85°C, depending on part variant)
Note: Exact timing, speed, and packaging options depend on the specific lot/grade. For precise specs, consult the official datasheet.
- Type: DDR3 SDRAM
- Density/Organization: 4 Gb per die, x4 data width
- Banks: 8 banks
- Burst: Burst length 8
- Voltage: 1.5 V nominal
- Speed grade: supports standard DDR3 speeds (up to around 1066 MT/s; PC3-8500 class; some variants may reach higher per grade)
- JEDEC compliant
- Timing features: standard DDR3 timing with typical CL/RCD/RAS characteristics
- Refresh: on-die self-refresh with ZQ calibration; partial array self-refresh
- Thermal: on-die thermal sensor
- Packaging: standard Micron FBGA (ball grid array) form factor
- Temperature grades: commercial and industrial variants available (e.g., 0°C to 85°C and/or -40°C to 85°C, depending on part variant)
Note: Exact timing, speed, and packaging options depend on the specific lot/grade. For precise specs, consult the official datasheet.
Package
FBGA package – specifically a 63‑ball FBGA package.
Pinout
- Pin count: 96 pins (FBGA-96).
- Function: Micron MT40A4G4JC-062E:E is a DDR3 SDRAM device with a x4 data width (4-bit I/O). It provides standard DDR3 memory interfaces: DQ0–DQ3 data I/O, DQS0–DQS1 data strobes, address pins (A0–A13/14), bank address BA0–BA2, and control signals (CS#, Ras#, Cas#, We#, CKE). Includes power/ground pins (Vcc, Vss) and reference pins (Vref/VrefDQ). Operates at ~1.5V and supports typical DDR3 timing.
- Function: Micron MT40A4G4JC-062E:E is a DDR3 SDRAM device with a x4 data width (4-bit I/O). It provides standard DDR3 memory interfaces: DQ0–DQ3 data I/O, DQS0–DQS1 data strobes, address pins (A0–A13/14), bank address BA0–BA2, and control signals (CS#, Ras#, Cas#, We#, CKE). Includes power/ground pins (Vcc, Vss) and reference pins (Vref/VrefDQ). Operates at ~1.5V and supports typical DDR3 timing.
Manufacturer
Manufacturer: Micron Technology, Inc.
What kind of company: A US-based multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash) and related technologies; one of the world’s largest memory manufacturers.
What kind of company: A US-based multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash) and related technologies; one of the world’s largest memory manufacturers.
Application
MT40A4G4JC-062E:E is a Micron DDR3L SDRAM device (low-power, high-density). Typical application areas: laptops/notebooks (SODIMM), desktops/entry servers, storage controllers, networking equipment (routers/switches), embedded/industrial systems, and other consumer electronics requiring DDR3L memory.
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