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MT40A2G8VA-062E:B
IC DRAM 16GBIT PARALLEL 78FBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT40A2G8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 4G x 4 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (10x11) |
| Packaging | Tray |
| Access Time | 19 ns |
概述
Description
The MT40A2G8VA-062E:B is a high-performance DRAM (Dynamic Random Access Memory) module manufactured by Micron Technology. It is a DDR4 (Double Data Rate 4) memory chip that operates at a voltage of 1.2V, making it energy-efficient compared to older DDR technologies. This specific model features a capacity of 16GB, organized as 2G x 8 bits, which is suitable for applications requiring substantial memory bandwidth and capacity.
The part number indicates it is designed for use in various computing applications, including servers, workstations, and high-performance computing systems. The suffix 'B' typically denotes specific features or packaging variants, which can include thermal performance or power management enhancements.
With data rates capable of reaching up to 2400 MT/s (mega transfers per second), the MT40A2G8VA-062E:B is ideal for demanding tasks such as data processing, gaming, and graphics rendering, balancing performance with efficiency. It is commonly used in modern computing systems that require reliable and fast memory solutions.
The part number indicates it is designed for use in various computing applications, including servers, workstations, and high-performance computing systems. The suffix 'B' typically denotes specific features or packaging variants, which can include thermal performance or power management enhancements.
With data rates capable of reaching up to 2400 MT/s (mega transfers per second), the MT40A2G8VA-062E:B is ideal for demanding tasks such as data processing, gaming, and graphics rendering, balancing performance with efficiency. It is commonly used in modern computing systems that require reliable and fast memory solutions.
Features
The MT40A2G8VA-062E:B is a DDR4 DRAM memory chip from Micron Technology. It features the following key attributes:
1. Density: 16Gb (2GB) capacity per chip.
2. Technology: DDR4 SDRAM, offering higher speed and efficiency compared to previous DDR generations.
3. Speed: Operates at a data rate of 2400 MT/s (megatransfers per second).
4. Voltage: Typically operates at 1.2V, contributing to lower power consumption.
5. Package: Comes in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package, facilitating space-saving designs.
6. Features: Supports features like burst lengths of 8 and 16, and includes on-die termination (ODT) for improved signal integrity.
Overall, the MT40A2G8VA-062E:B is suitable for various applications, including consumer electronics, servers, and other computing devices requiring efficient and reliable memory solutions.
1. Density: 16Gb (2GB) capacity per chip.
2. Technology: DDR4 SDRAM, offering higher speed and efficiency compared to previous DDR generations.
3. Speed: Operates at a data rate of 2400 MT/s (megatransfers per second).
4. Voltage: Typically operates at 1.2V, contributing to lower power consumption.
5. Package: Comes in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package, facilitating space-saving designs.
6. Features: Supports features like burst lengths of 8 and 16, and includes on-die termination (ODT) for improved signal integrity.
Overall, the MT40A2G8VA-062E:B is suitable for various applications, including consumer electronics, servers, and other computing devices requiring efficient and reliable memory solutions.
Package
The MT40A2G8VA-062E:B is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density memory applications, providing a compact footprint and efficient thermal performance.
Pinout
The MT40A2G8VA-062E:B is a 2Gb (Gigabit) DDR3 SDRAM memory chip with a pin count of 78. This component typically operates at a voltage of 1.5V and supports data rates up to 1600 MT/s (mega-transfers per second).
Its primary function is to provide high-speed memory storage for various applications, including mobile devices, consumer electronics, and computing systems. The chip features a double data rate interface, allowing it to transfer data on both the rising and falling edges of the clock signal, which enhances overall memory performance. It adheres to the DDR3 SDRAM specification, ensuring compatibility with a wide range of systems.
Its primary function is to provide high-speed memory storage for various applications, including mobile devices, consumer electronics, and computing systems. The chip features a double data rate interface, allowing it to transfer data on both the rising and falling edges of the clock signal, which enhances overall memory performance. It adheres to the DDR3 SDRAM specification, ensuring compatibility with a wide range of systems.
Manufacturer
The manufacturer of the MT40A2G8VA-062E:B is Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, primarily focusing on memory and storage solutions. Established in 1978 and headquartered in Boise, Idaho, Micron produces various types of memory products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves a wide range of markets, including computing, mobile devices, automotive, and industrial applications. Micron is recognized as one of the leading manufacturers in the global memory market, contributing to advancements in technology and innovation for both consumer and enterprise solutions.
Application
The MT40A2G8VA-062E:B is a DDR4 SDRAM memory chip commonly used in applications such as servers, data centers, and high-performance computing systems. It is suitable for tasks requiring high bandwidth and low latency, including enterprise storage, networking equipment, and advanced computing applications like artificial intelligence and machine learning. Its reliability and speed make it ideal for performance-critical environments.
Equivalent
The MT40A2G8VA-062E:B is a DDR3 SDRAM memory chip. Equivalent products may include:
1. Hynix H5TQ2G83CFR
2. Micron MT41K256M16HA
3. Samsung K3UAG5H24B
Ensure compatibility with specifications like speed, voltage, and pin configuration when selecting alternatives.
1. Hynix H5TQ2G83CFR
2. Micron MT41K256M16HA
3. Samsung K3UAG5H24B
Ensure compatibility with specifications like speed, voltage, and pin configuration when selecting alternatives.
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