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MT40A2G8SA-062E:F
IC DRAM 16GBIT PAR 78FBGA
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規格
| Part Status | Active |
| Base Product Number | MT40A2G8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 2G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 1.5 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Packaging | Bulk |
| Access Time | 19 ns |
概述
Description
The MT40A2G8SA-062E:F is a memory chip manufactured by Micron Technology, specifically designed for DDR4 SDRAM applications. It features a 2GB capacity per chip, utilizing a dual-rank architecture, which enhances performance by allowing simultaneous access to memory banks. The chip operates at a standard voltage of 1.2V and supports data rates up to 2400 MT/s (million transfers per second), making it suitable for a wide range of computing applications, including desktops, laptops, and servers.
This memory model complies with industry standards for DDR4, offering improved speed and efficiency compared to previous DDR generations. The "F" suffix typically indicates a specific version or configuration, which may relate to the package type or temperature range. Overall, the MT40A2G8SA-062E:F is designed for high-performance computing needs, ensuring reliable data processing and multitasking capabilities.
This memory model complies with industry standards for DDR4, offering improved speed and efficiency compared to previous DDR generations. The "F" suffix typically indicates a specific version or configuration, which may relate to the package type or temperature range. Overall, the MT40A2G8SA-062E:F is designed for high-performance computing needs, ensuring reliable data processing and multitasking capabilities.
Features
The MT40A2G8SA-062E:F is a DDR4 DRAM memory chip manufactured by Micron Technology. It features a 16Gb (2GB x 8) configuration with a data rate of up to 2400 MT/s, making it suitable for high-performance computing applications. This memory chip operates at a voltage of 1.2V, which contributes to lower power consumption compared to previous DDR generations.
Key features include:
- Capacity: 16Gb (2GB x 8)
- Data Rate: Up to 2400 MT/s
- Voltage: 1.2V
- Package Type: FBGA (Fine Ball Grid Array)
- Temperature Range: Commercial grade (0°C to 95°C)
- ECC Support: Error-Correcting Code support for increased reliability.
The MT40A2G8SA-062E:F is ideal for use in servers, desktops, and laptops, providing enhanced performance, efficiency, and reliability for a variety of applications.
Key features include:
- Capacity: 16Gb (2GB x 8)
- Data Rate: Up to 2400 MT/s
- Voltage: 1.2V
- Package Type: FBGA (Fine Ball Grid Array)
- Temperature Range: Commercial grade (0°C to 95°C)
- ECC Support: Error-Correcting Code support for increased reliability.
The MT40A2G8SA-062E:F is ideal for use in servers, desktops, and laptops, providing enhanced performance, efficiency, and reliability for a variety of applications.
Package
The MT40A2G8SA-062E:F is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for efficient thermal management and space-saving in electronic circuit boards.
Pinout
The MT40A2G8SA-062E:F is a 2 Gigabit (Gb) DDR3 SDRAM memory chip with a pin count of 78. This memory device operates at a voltage of 1.5V and is designed for use in various applications, including consumer electronics and computing devices.
The primary functions of this chip include data storage and retrieval within systems, supporting various memory configurations. It features a double data rate (DDR) architecture, allowing it to transfer data on both the rising and falling edges of the clock signal, which enhances performance.
Key features include a data rate of 1066 MT/s (megatransfers per second) and support for a 64-bit data bus. The chip is designed to provide efficient and reliable performance for dynamic random access memory needs.
The primary functions of this chip include data storage and retrieval within systems, supporting various memory configurations. It features a double data rate (DDR) architecture, allowing it to transfer data on both the rising and falling edges of the clock signal, which enhances performance.
Key features include a data rate of 1066 MT/s (megatransfers per second) and support for a 64-bit data bus. The chip is designed to provide efficient and reliable performance for dynamic random access memory needs.
Manufacturer
The manufacturer of the MT40A2G8SA-062E:F is Micron Technology, Inc. Micron is an American multinational corporation specializing in the production of semiconductor devices, primarily memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its development of DRAM, NAND Flash, and 3D XPoint memory technologies. The company serves a wide range of markets, including computing, mobile, automotive, and industrial sectors, providing essential components for various electronic devices. Micron is recognized as one of the leading memory manufacturers globally, contributing significantly to advancements in memory technology and innovation.
Application
The MT40A2G8SA-062E:F is a DDR4 SDRAM memory chip primarily used in applications such as high-performance computing, data centers, servers, networking equipment, and consumer electronics. Its features make it suitable for tasks requiring large memory bandwidth, efficient multitasking, and fast data processing, catering to industries like cloud computing, gaming, and artificial intelligence.
Equivalent
The MT40A2G8SA-062E:F is a DDR3 SDRAM memory chip. Equivalent products include the Hynix H5TQ2G83BFR, Samsung K4B4G0846E-BCK0, and Micron MT41K256M16HA-125. These alternatives share similar specifications such as speed, organization, and voltage. Always verify compatibility with your specific application requirements.
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