MT40A2G8AG-062E:F

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MT40A2G8AG-062E:F

MT40A2G8AG-062E:F

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規格

Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 2G x 8
Operating Temperature 0°C ~ 95°C
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-FBGA (7.5x11)
Clock Frequency 1.6 GHz

概述

Description

The MT40A2G8AG-062E:F is a DDR4 SDRAM memory chip manufactured by Micron Technology. It is designed for high-performance computing applications, providing efficient and fast data transfer rates necessary for demanding tasks. This component typically features a capacity of 16 Gb (gigabits), organized in a configuration of 2G x 8, indicating it has 2 billion cells, each storing 8 bits of data.
The DDR4 technology enhances performance by delivering faster speeds and higher bandwidth compared to its predecessors, such as DDR3. It operates at a standard voltage of 1.2V, which contributes to reduced power consumption, making it suitable for use in data centers and other environments where energy efficiency is crucial.
This particular model might also include features such as Error Correction Code (ECC) support, depending on the specific version, to ensure data integrity by correcting errors on the fly. The "062E:F" suffix typically refers to specific speed grades and internal timings, but detailed specifications should be referred from Micron’s datasheet to understand its full capabilities and suitable applications.

Features

The MT40A2G8AG-062E:F is a DRAM component, specifically a DDR4 SDRAM chip, designed for high-performance computing applications. Here are its key features:
1. Density and Capacity: It typically has a density of 16Gb, providing a substantial amount of memory for various computing tasks.
2. Speed and Performance: Operates with a data rate of 3200 MT/s (megatransfers per second), ensuring fast data access and processing, suitable for demanding applications.
3. Voltage: Operates at a low voltage of 1.2V, which helps in reducing power consumption and heat generation, making it energy efficient.
4. CAS Latency: Supports multiple CAS latency settings, typically ranging from 19 to 22, allowing for flexibility in tuning performance.
5. Package Type: Comes in a standard FBGA (Fine-pitch Ball Grid Array) package, which is compact and suitable for integration into various system designs.
6. Reliability: Features error correction capabilities and robust build quality, enhancing system reliability and data integrity.
7. Compatibility: Compliant with JEDEC standards, ensuring broad compatibility with other DDR4 systems and components.
These features make the MT40A2G8AG-062E:F suitable for use in servers, desktops, and other high-performance computing environments.

Package

The MT40A2G8AG-062E:F is a DRAM module from Micron, typically used in computing applications. It is packaged in a standard FBGA (Fine-Pitch Ball Grid Array) form, which allows for high-density memory and efficient thermal performance.

Pinout

The MT40A2G8AG-062E:F is a DDR4 SDRAM component with specific features and pin count. This memory chip is an 8Gb density (1G x 8) part. Regarding pin count, it typically comes in a 78-ball FBGA (Fine Ball Grid Array) package.
The primary function of the MT40A2G8AG-062E:F is to provide volatile storage in computing systems, offering fast data access speeds suitable for high-performance applications. It is used in applications like desktops, laptops, servers, and other electronic devices requiring efficient memory solutions. The chip supports a variety of functions, including data read and write operations, refresh functions, and power management features, all critical for maintaining data integrity and performance in dynamic workloads.
Note that it's essential to consult the official datasheet from Micron Technology for detailed specifications and pin configurations to ensure proper integration and usage in designs.

Manufacturer

The MT40A2G8AG-062E:F is a DRAM (Dynamic Random-Access Memory) chip manufactured by Micron Technology, Inc. Micron is a leading global corporation specializing in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops innovative technologies used in computing, networking, and consumer electronics. As one of the largest semiconductor companies in the world, Micron is involved in the design and production of DRAM, NAND flash memory, and other semiconductor devices. The company's products serve a diverse range of applications, including data centers, mobile devices, personal computers, automotive, industrial, and consumer electronics. Micron is known for its focus on research and development, consistently advancing memory technology to enhance performance, efficiency, and reliability.

Application

The MT40A2G8AG-062E:F is a DRAM module designed for use in various computing applications. Its primary application areas include data centers, enterprise servers, cloud computing, and high-performance computing systems. It is suitable for tasks requiring high memory bandwidth and capacity, such as virtualization, large-scale data processing, and real-time analytics. Additionally, it can be used in networking equipment and advanced telecommunications systems where efficient data handling is crucial.

Equivalent

The MT40A2G8AG-062E:F is a DDR4 SDRAM chip from Micron. Equivalent products are typically from other major memory manufacturers such as:
1. Samsung: K4A8G085WB-BCTD
2. SK Hynix: H5AN8G8NCJR-VKC
3. Kingston: Equivalent DDR4 chips with similar specifications in their catalog.
It is important to compare specific parameters such as speed, capacity, and voltage to ensure full compatibility.

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