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MT40A2G4WE-083E:B

Name: MT40A2G4WE-083E:B
Rating: 4.7 (12 reviews)

IC DRAM 8GBIT PARALLEL 78FBGA

製造商
製造商。部分 #MT40A2G4WE-083E:B
包 78-TFBGA
資料表
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規格

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR4
MemorySize	8Gb (2G x 4)
MemoryInterface	Parallel
ClockFrequency	1.2 GHz
Voltage-Supply	1.14V ~ 1.26V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	78-TFBGA

概述

Description

MT40A2G4WE-083E:B is a Micron DDR3 SDRAM memory device (not a full module). Key points:
- Family and type: DDR3 SDRAM bare die/chip, from the MT40A2G4WE family.
- Capacity/organization: typically 2 Gbit total per die, organized as 2Gbit × 4 (x4 data width).
- Banks and features: standard DDR3 device with multiple banks (usually 8), supports typical DDR3 timing and control signals.
- Electricals and suffixes: DDR3 voltage around 1.5 V (some variants use other voltages); the -083E:B suffix encodes the speed grade, temperature/packaging details, and RoHS status. Exact numbers require the datasheet.
- Usage: used as a component die inside memory modules (DIMMs/SO-DIMMs) in combination with other chips to form larger capacities.
For precise speed (MT/s), voltage, timing, package, and package marking, consult the Micron MT40A2G4WE datasheet.

Features

MT40A2G4WE-083E:B is a Micron DDR3 SDRAM device. Key features:
- Density/organization: 2 Gb per die, x4 data width
- Banks: 8
- Speed: DDR3 up to 1333 MT/s (1066/1333 grade variants)
- Voltage: 1.5 V (DDR3 standard; check datasheet for variants)
- Package: FBGA
- ECC: typically non-ECC (ECC applies to modules, not individual dies)
- Applications: used as a component in DIMMs/R-DIMMs and other memory subsystems
Note: exact timings, voltage variants, and temperature range depend on the specific lot and datasheet. Refer to MT40A2G4WE-083E:B datasheet for precise specs.

Package

FBGA package — a 96-ball Fine-Pinned Ball Grid Array (FBGA-96) variant.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational memory and storage technology company that designs, manufactures, and sells DRAM, NAND flash, and NOR flash memory. Headquartered in Boise, Idaho; one of the world’s largest memory chip makers, serving computers, servers, mobile devices, and data centers. Publicly traded on NASDAQ (MU).

Application

Applications: high-density DRAM for servers/data centers (DIMMs/LPDIMMs), desktops/workstations, laptops/mobile memory, graphics/compute accelerators, networking equipment, storage controllers and SSDs, and embedded/industrial systems requiring reliable DRAM.

Equivalent

MT40A2G4WE-083E:B is Micron DDR3 SDRAM, density 2 Gb, x4 organization, 1.5 V, in a 96-ball FBGA. Equivalents depend on same density/width; possible cross-refs from other vendors include Hynix H5TQ2G63EFR, Samsung K4B4G1646F, and Nanya NT5CB256M4. For an exact match, use Micron’s cross-reference tool or DigiKey/Mouser search by density, width, speed, and package.