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MT40A2G4SA-075:E
IC DRAM 8GBIT PARALLEL 78FBGA
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- 製造商。 部分 #MT40A2G4SA-075:E
- 包 FBGA-78
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規格
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 8Gb (2G x 4) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.33 GHz |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 78-TFBGA |
概述
Description
MT40A2G4SA-075:E is a Micron Technology DRAM device (MT40A2G4SA family). It’s a 2‑Gbit density, x4 organization synchronous DRAM (SDRAM) chip used as a building block in memory modules and storage subsystems. Features generic to JEDEC SDRAM devices: multi‑bank operation, auto‑refresh, and a synchronous interface. The “-075” indicates a speed grade, while the “:E” suffix relates to packaging/temperature category. For exact electrical specs (voltage, timings, number of banks, packaging), refer to the MT40A2G4SA-075:E datasheet.
Features
MT40A2G4SA-075:E features (concise):
- 2 Gbit per device, x4 organization (4-bit data bus).
- DDR3 SDRAM, synchronous, 8 banks.
- Data rate up to 1600 MT/s (PC3-12800) with 1.5V operation.
- ZQ calibration, On-Die Termination (ODT), DLL.
- Power-saving: deep sleep/power-down modes; partial array/self-refresh.
- Packaging: 96-ball FBGA.
- Extended temperature grade: typically -40°C to +85°C.
- Pb-free, RoHS compliant.
- Applications: memory components for high-density SDRAM modules.
- 2 Gbit per device, x4 organization (4-bit data bus).
- DDR3 SDRAM, synchronous, 8 banks.
- Data rate up to 1600 MT/s (PC3-12800) with 1.5V operation.
- ZQ calibration, On-Die Termination (ODT), DLL.
- Power-saving: deep sleep/power-down modes; partial array/self-refresh.
- Packaging: 96-ball FBGA.
- Extended temperature grade: typically -40°C to +85°C.
- Pb-free, RoHS compliant.
- Applications: memory components for high-density SDRAM modules.
Package
FBGA (Fine-pitch Ball Grid Array) package.
Pinout
- Pin count: 84 pins (FBGA-84; package variant may vary, but MT40A2G4SA-075:E is a DDR3 device in an 84‑ball package).
- Function: DDR3 SDRAM memory device, 2 Gb density with x4 data width. Provides standard DDR3 interface: DQ[3:0] data pins, DQS/ DQS# strobe, CK/CK# clock, CS#, CKE, RAS#, CAS#, WE#, BA[2:0], A[0:13] (address/command), and power/ground pins (VDD/VSS, VDDQ/VSSQ, VREF/ODT as applicable). Eight-bank organization.
- Function: DDR3 SDRAM memory device, 2 Gb density with x4 data width. Provides standard DDR3 interface: DQ[3:0] data pins, DQS/ DQS# strobe, CK/CK# clock, CS#, CKE, RAS#, CAS#, WE#, BA[2:0], A[0:13] (address/command), and power/ground pins (VDD/VSS, VDDQ/VSSQ, VREF/ODT as applicable). Eight-bank organization.
Manufacturer
Manufacturer: Micron Technology, Inc.
Micron is an American multinational company that designs and manufactures memory and storage technologies, including DRAM, NAND flash, and SSDs, and is one of the world's leading memory-chip producers.
Micron is an American multinational company that designs and manufactures memory and storage technologies, including DRAM, NAND flash, and SSDs, and is one of the world's leading memory-chip producers.
Application
MT40A2G4SA-075:E is a Micron DDR3 SDRAM device used as system memory. Applications include notebook and desktop memory modules (SO-DIMM/DIMM), servers and workstations, embedded/industrial equipment (routers, telecom, storage controllers), graphics and multimedia processing, and other consumer electronics requiring high-speed DRAM.
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