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MT40A256M16TB-062E:G
MOD DRAM 4GBIT PARALLEL FBGA
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- 製造商。 部分 #MT40A256M16TB-062E:G
- 包 96-TFBGA
- 資料表
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規格
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 4Gb (256M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.6 GHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 19 ns |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 96-TFBGA |
概述
Description
MT40A256M16TB-062E:G is a Micron DRAM device. Key points:
- Type/family: Micron MT40A256M16TB series DRAM chip.
- Density/organization: 256 megabits total, organized as 256M x 16 (32 MB per device).
- Use: a component die used in memory modules (DIMMs, server memory), not a standalone RAM module.
- Suffixes: “-062E” denotes a specific speed grade/temperature rating; “:G” indicates RoHS-compliant (lead-free).
- Specs: exact speed (data rate), timing, and operating voltage depend on the revision and datasheet. Check the Micron MT40A256M16TB datasheet or product page for the precise values.
If you need precise speed (MT/s), voltage, and timing, refer to the official datasheet for this exact part revision.
- Type/family: Micron MT40A256M16TB series DRAM chip.
- Density/organization: 256 megabits total, organized as 256M x 16 (32 MB per device).
- Use: a component die used in memory modules (DIMMs, server memory), not a standalone RAM module.
- Suffixes: “-062E” denotes a specific speed grade/temperature rating; “:G” indicates RoHS-compliant (lead-free).
- Specs: exact speed (data rate), timing, and operating voltage depend on the revision and datasheet. Check the Micron MT40A256M16TB datasheet or product page for the precise values.
If you need precise speed (MT/s), voltage, and timing, refer to the official datasheet for this exact part revision.
Package
FBGA-96 (96-ball fine-pitch Ball Grid Array) package.
Pinout
Pin count: 96 pins (FBGA package).
Function: Micron MT40A256M16TB-062E:G is a DDR3 SDRAM device, organized 256M × 16 (i.e., 4 Gbit total). It provides a standard DDR3 memory interface with 16 data lines (DQ0–DQ15) plus data-strobe lines (DQS) and the usual DDR3 address/command signals (A0–A12, BA0–BA2, CS, RAS, CAS, WE, CKE, ODT, etc.) and power/ground pins. It is used as synchronous memory with multiple banks (typically 8) for system memory.
Function: Micron MT40A256M16TB-062E:G is a DDR3 SDRAM device, organized 256M × 16 (i.e., 4 Gbit total). It provides a standard DDR3 memory interface with 16 data lines (DQ0–DQ15) plus data-strobe lines (DQS) and the usual DDR3 address/command signals (A0–A12, BA0–BA2, CS, RAS, CAS, WE, CKE, ODT, etc.) and power/ground pins. It is used as synchronous memory with multiple banks (typically 8) for system memory.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash); an integrated device manufacturer (IDM) headquartered in Boise, Idaho.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash); an integrated device manufacturer (IDM) headquartered in Boise, Idaho.
Application
MT40A256M16TB-062E:G is a DRAM device. Typical application areas:
- Graphics/video memory (GPUs, game consoles) for frame buffers and textures
- System memory for desktops, notebooks, and embedded platforms
- Networking/telecom equipment (buffers, caches)
- Industrial, automotive, and consumer electronics requiring moderate-capacity DRAM
- Storage controllers and accelerators as cache/memory buffers
Note: exact usage depends on system design and memory interface (e.g., DDR variation and speed).
- Graphics/video memory (GPUs, game consoles) for frame buffers and textures
- System memory for desktops, notebooks, and embedded platforms
- Networking/telecom equipment (buffers, caches)
- Industrial, automotive, and consumer electronics requiring moderate-capacity DRAM
- Storage controllers and accelerators as cache/memory buffers
Note: exact usage depends on system design and memory interface (e.g., DDR variation and speed).
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