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MT40A256M16GE-062E:B
IC DRAM 4GBIT PARALLEL 96FBGA
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- 製造商。 部分 #MT40A256M16GE-062E:B
- 包 96-TFBGA
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規格
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR4 |
| MemorySize | 4Gb (256M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 1.6 GHz |
| Voltage-Supply | 1.14V ~ 1.26V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 96-TFBGA |
概述
Description
MT40A256M16GE-062E:B is Micron’s DDR3 SDRAM device. Key points:
- Type/ role: DDR3 DRAM chip, not a module.
- Capacity/ organization: 4 Gbit total per die (256M × 16).
- Data width: x16 I/O.
- Interface/ speed: DDR3; speed grade encoded in the -062E suffix (exact timing/specs in the datasheet).
- Voltage: typically ~1.5 V for standard DDR3 (some variants/steps use 1.35 V for DDR3L; verify in the datasheet).
- Package: a small BGA device (suffix B indicates RoHS-compliant variant).
- Applications: used on memory modules or boards with a DDR3 memory controller (DIMMs, embedded/processor boards).
- Notes: For exact timing (tRCD, tRP, tRAS), voltage, temperature range, and packaging, refer to Micron’s datasheet for MT40A256M16GE-062E:B.
- Type/ role: DDR3 DRAM chip, not a module.
- Capacity/ organization: 4 Gbit total per die (256M × 16).
- Data width: x16 I/O.
- Interface/ speed: DDR3; speed grade encoded in the -062E suffix (exact timing/specs in the datasheet).
- Voltage: typically ~1.5 V for standard DDR3 (some variants/steps use 1.35 V for DDR3L; verify in the datasheet).
- Package: a small BGA device (suffix B indicates RoHS-compliant variant).
- Applications: used on memory modules or boards with a DDR3 memory controller (DIMMs, embedded/processor boards).
- Notes: For exact timing (tRCD, tRP, tRAS), voltage, temperature range, and packaging, refer to Micron’s datasheet for MT40A256M16GE-062E:B.
Features
MT40A256M16GE-062E:B is a DDR3 SDRAM device. Key features typically include:
- Capacity/organization: 512 MB total (256M x 16)
- Data width: x16
- Banks: 8 banks
- Burst length: 8
- Speed: DDR3-1066/1333/1600 MT/s (device-dependent)
- Voltage: 1.5V (DDR3) with DDR3L variants supporting 1.35V
- Features: synchronous, on-die termination, DLL, Auto/Self refresh, ZQ calibration, partial array power-down, deep power-down
- Packaging: commonly FBGA (per datasheet)
- JEDEC-compliant DDR3 device, suitable for notebooks, embedded/applications requiring mid-density memory
Note: exact speed grade and voltage can vary by lot; please consult the datasheet for precise specifications.
- Capacity/organization: 512 MB total (256M x 16)
- Data width: x16
- Banks: 8 banks
- Burst length: 8
- Speed: DDR3-1066/1333/1600 MT/s (device-dependent)
- Voltage: 1.5V (DDR3) with DDR3L variants supporting 1.35V
- Features: synchronous, on-die termination, DLL, Auto/Self refresh, ZQ calibration, partial array power-down, deep power-down
- Packaging: commonly FBGA (per datasheet)
- JEDEC-compliant DDR3 device, suitable for notebooks, embedded/applications requiring mid-density memory
Note: exact speed grade and voltage can vary by lot; please consult the datasheet for precise specifications.
Package
BGA package (FBGA).
Pinout
- Pin count: 96-ball FBGA package (96 pins)
- Function: DDR3 SDRAM device with 256M × 16 organization (roughly 4 Gbit per device), 8-bank memory core.
- Function: DDR3 SDRAM device with 256M × 16 organization (roughly 4 Gbit per device), 8-bank memory core.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, etc.) for computers, servers, mobile devices, and other electronics.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, etc.) for computers, servers, mobile devices, and other electronics.
Application
MT40A256M16GE-062E:B is a Micron DDR4 SDRAM device (256K x 16). Typical application areas include:
- Desktop and laptop main memory
- Servers and data centers
- Graphics cards and multimedia devices
- Networking equipment and storage controllers
- Embedded systems and other DDR4-based memory subsystems
- Desktop and laptop main memory
- Servers and data centers
- Graphics cards and multimedia devices
- Networking equipment and storage controllers
- Embedded systems and other DDR4-based memory subsystems
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