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MT40A1G8WE-083E IT:B

Name: MT40A1G8WE-083E IT:B
Rating: 4.7 (12 reviews)

BGA Memory (ICs) RoHS

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規格

Packaging

BGA

概述

Description

The MT40A1G8WE-083E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology. It features a 1GB capacity per chip and operates at a voltage of 1.2V, making it suitable for various computing applications, including servers, laptops, and high-performance workstations. The "083E" designation indicates specific manufacturing details and characteristics, such as speed grade, which typically aligns with performance standards like data rate per pin.
In terms of performance, DDR4 technology offers improved speed and efficiency compared to previous generations, enabling faster data transfer rates and lower power consumption. The "IT:B" likely refers to the industrial temperature range and binning classification, indicating that the module is designed for robust performance under various environmental conditions.
Overall, the MT40A1G8WE-083E is a reliable choice for systems requiring efficient memory solutions, supporting enhanced multitasking and improved system responsiveness.

Features

The MT40A1G8WE-083E IT:B is a high-performance DDR3 SDRAM memory module produced by Micron Technology. Key features include:
1. Density: 1GB capacity.
2. Organization: It utilizes a 8-bit wide I/O interface, supporting 8 banks of memory.
3. Data Rate: Operates at a data rate of 1066 MT/s (megatransfers per second).
4. Voltage: It is designed to operate at a supply voltage of 1.5V.
5. Package: Comes in a 78-ball FBGA (Fine Ball Grid Array) package, ensuring compact design.
6. Latency: Offers low latency, suitable for various applications in consumer electronics and computing devices.
7. Temperature Range: It is rated for industrial-grade temperature specifications, making it suitable for harsher environments.
This memory module is ideal for applications requiring reliable performance in embedded systems and other industrial uses.

Package

The MT40A1G8WE-083E IT:B is a DDR3 memory chip packaged in a 78-ball FBGAs (Fine Ball Grid Array) format. This package type is designed for high-density memory applications, offering efficient thermal performance and compact size suitable for various electronic devices.

Pinout

The MT40A1G8WE-083E IT:B is a 1 Gigabit (1G x 8) DDR3 SDRAM memory chip manufactured by Micron Technology. It features a total of 84 pins.
The primary functions of this memory component include:
1. Data Storage: It serves as volatile memory for a variety of applications, including computing and mobile devices.
2. Interface: The chip interfaces using a DDR3 memory protocol, supporting speeds of up to 1600 MT/s (megatransfers per second).
3. Power Management: It operates at a voltage of 1.5V, with a low power mode to enhance energy efficiency.
4. Data Width: It has a data width of 8 bits, allowing for compatibility with various system architectures.
Overall, the MT40A1G8WE-083E IT:B is designed for high-performance applications requiring reliable memory solutions.

Manufacturer

The manufacturer of the MT40A1G8WE-083E IT:B is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a wide range of memory products for various applications, including computing, mobile devices, automotive, and enterprise storage. The company is known for its innovative technologies and plays a crucial role in advancing memory and storage solutions worldwide.

Application

The MT40A1G8WE-083E IT:B is a DDR3 SDRAM memory module commonly used in applications such as laptops, desktops, servers, and networking equipment. It is designed for high-performance tasks, including data-intensive applications, gaming, and virtualization environments. Its low power consumption makes it suitable for mobile devices and energy-efficient systems.

Equivalent

The MT40A1G8WE-083E IT:B chip is a 1Gb DDR3 SDRAM memory component. Equivalent products include:
1. Hynix H5TQ1G83AFR
2. Samsung K4B1G1646C
3. Micron MT41K256M16HA-125
Ensure to check specifications like speed, voltage, and package type for compatibility.