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MT40A1G8SA-062E IT:E

Name: MT40A1G8SA-062E IT:E
Rating: 4.7 (12 reviews)

1.14V~1.26V 8Gbit 1.6GHz DDR4 SDRAM FBGA-78 Memory (ICs) RoHS

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規格

Packaging	FBGA-78
Clock Frequency	1.6GHz
Memory Format	DDR4 SDRAM
Memory Size	8Gbit
Operating temperature	-40℃~+95℃
Voltage - Supply	1.14V~1.26V

概述

Description

The MT40A1G8SA-062E is a memory component manufactured by Micron Technology. It is a DRAM (Dynamic Random Access Memory) module that features a density of 1GB, organized as 8 bits x 8 banks. This module is typically used in various applications, including consumer electronics, computing devices, and embedded systems.
The “062E” in its part number usually indicates specific characteristics, such as speed grade and packaging, while “IT” signifies that it is designed for industrial temperature ranges, making it suitable for more demanding environments. The chip operates on a voltage of 1.5V, offering standard performance for DDR3 memory.
Overall, this component is crucial for applications requiring reliable and efficient memory solutions. Its features allow for enhanced data processing and storage capabilities in a wide range of electronic devices.

Features

The MT40A1G8SA-062E is a DDR4 SDRAM memory module produced by Micron Technology. Key features include:
- Density: 8 GB capacity.
- Data Rate: Operates at 2400 MT/s (megatransfers per second).
- Speed: CL=17 latency, ensuring efficient data transfer.
- Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), designed for laptops and compact devices.
- Voltage: Operates at a low voltage of 1.2V, enhancing power efficiency.
- Organization: Based on a 1G x 64-bit architecture, suitable for high-performance computing.
- ECC: Supports Error-Correcting Code (ECC) for improved reliability in critical applications.
This module is ideal for upgrading laptops or compact systems, offering a balance of performance and efficiency for various computing tasks.

Package

The MT40A1G8SA-062E IT:E is a DDR3 SDRAM memory chip packaged in a 78-ball tBGA (thin Ball Grid Array) format. This packaging is designed for space efficiency and thermal performance in electronic devices.

Pinout

The MT40A1G8SA-062E IT:E is a DRAM memory chip from Micron Technology, specifically a DDR3 SDRAM. It features a pin count of 78 pins in a TSOPII (Thin Small Outline Package) format.
The primary functions of this memory chip include serving as volatile storage in various computing applications, providing high-speed data access, and supporting robust performance for tasks requiring quick data retrieval and storage. This particular part is designed for mobile applications and is known for its low power consumption, making it suitable for battery-operated devices.
The key specifications include a data rate of 1066 MT/s, a memory organization of 1GB (1 Gbit x 8), and it operates at a voltage of 1.5V.

Manufacturer

The manufacturer of the MT40A1G8SA-062E IT:E is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and storage products. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a wide range of semiconductor products used in various applications, including computers, mobile devices, and enterprise solutions. The company is known for its innovation in memory technology and plays a significant role in the semiconductor industry, serving markets such as consumer electronics, automotive, and data centers.

Application

The MT40A1G8SA-062E IT:E is a DDR3 SDRAM memory chip commonly used in various applications such as laptops, desktops, servers, and networking devices. It is suitable for embedded systems, telecommunications, and industrial applications due to its high performance and reliability. Additionally, it supports applications requiring efficient data processing and storage, including gaming and multimedia devices.

Equivalent

The MT40A1G8SA-062E IT:E chip is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G0846D
3. Micron MT41K128M16HA
Ensure compatibility in terms of specifications like speed, voltage, and configuration when considering alternatives.