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MT40A1G8SA-062E:E
IC DRAM 8GBIT PARALLEL 78FBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT40A1G8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 8Gbit |
| Memory Organization | 1G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Packaging | Tray |
概述
Description
The MT40A1G8SA-062E is a memory component produced by Micron Technology, specifically a DRAM module. It is part of the DDR4 SDRAM family, designed for high-performance computing applications. This module features a density of 1GB and operates at a voltage of 1.2V, which is standard for DDR4 technology. The part number indicates that it is a synchronous dynamic random-access memory (SDRAM) and supports various advanced features such as error correction and low power consumption.
This particular model is suitable for use in laptops, servers, and other computing devices that require reliable and efficient memory solutions. Its design ensures compatibility with a wide range of platforms while providing enhanced performance compared to previous generations of memory. The MT40A1G8SA-062E is geared towards applications that demand higher data transfer rates and improved energy efficiency.
This particular model is suitable for use in laptops, servers, and other computing devices that require reliable and efficient memory solutions. Its design ensures compatibility with a wide range of platforms while providing enhanced performance compared to previous generations of memory. The MT40A1G8SA-062E is geared towards applications that demand higher data transfer rates and improved energy efficiency.
Features
The MT40A1G8SA-062E:E is a DRAM memory chip produced by Micron Technology. It is a DDR4 SDRAM, featuring a 1GB capacity with an organization of 8 bits x 8. Key specifications include a 240-pin form factor, a data rate of 2133 MT/s, and an operating voltage of 1.2V. The chip is designed for high performance and energy efficiency, making it suitable for various applications, including personal computers, servers, and mobile devices.
The MT40A1G8SA-062E:E features on-die termination (ODT) and is compliant with the DDR4 SDRAM standard, which enhances its reliability and performance. It's optimized for low power consumption while providing faster data transfer rates compared to previous DDR generations. The package is often used in consumer electronics, industrial applications, and embedded systems, benefiting from its compact size and efficient design.
The MT40A1G8SA-062E:E features on-die termination (ODT) and is compliant with the DDR4 SDRAM standard, which enhances its reliability and performance. It's optimized for low power consumption while providing faster data transfer rates compared to previous DDR generations. The package is often used in consumer electronics, industrial applications, and embedded systems, benefiting from its compact size and efficient design.
Package
The MT40A1G8SA-062E:E is a DDR3 SDRAM memory chip packaged in a 78-ball Fine Pitch Ball Grid Array (FBGA). This packaging type is designed for compactness and efficient thermal performance, suitable for high-density applications.
Pinout
The MT40A1G8SA-062E:E is a DDR3 SDRAM memory chip from Micron Technology. It features a pin count of 78 pins. The primary function of this memory chip is to provide high-speed data storage and retrieval for computer systems, such as laptops and desktops, enhancing performance in applications that require fast memory access. It operates at a voltage of 1.5V and supports a data rate of 1066 MT/s (megatransfers per second). The device is organized as 1 Gbit x 8, making it suitable for various memory-intensive tasks. Additionally, it adheres to the DDR3 standard, ensuring compatibility with a wide range of motherboards and systems.
Manufacturer
The manufacturer of the MT40A1G8SA-062E:E is Micron Technology, Inc. Micron is a global leader in semiconductor manufacturing, specializing in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and consumer electronics. The company is known for its innovation in memory technology and plays a crucial role in advancing data storage and processing capabilities across various industries.
Application
The MT40A1G8SA-062E is a DRAM memory chip commonly used in various applications, including mobile devices, laptops, tablets, and other consumer electronics. It serves in graphics systems, automotive electronics, and industrial applications, providing high-density memory solutions for efficient data processing and storage.
Equivalent
The MT40A1G8SA-062E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ1G83AFR
2. Micron MT40A1G8SA-062E
3. Samsung K4B4G1646B-HCH9
These alternatives have similar specifications, such as speed, capacity, and pin configurations. Always verify compatibility with your specific application.
1. Hynix H5TQ1G83AFR
2. Micron MT40A1G8SA-062E
3. Samsung K4B4G1646B-HCH9
These alternatives have similar specifications, such as speed, capacity, and pin configurations. Always verify compatibility with your specific application.
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