MT40A1G4RH-083E:B

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MT40A1G4RH-083E:B

IC DRAM 4GBIT PARALLEL 78FBGA

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  • 製造商。 部分 #MT40A1G4RH-083E:B
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規格

Supplier Micron Technology Inc.
Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 4Gb (1G x 4)
MemoryInterface Parallel
ClockFrequency 1.2 GHz
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

概述

Description

MT40A1G4RH-083E:B is a Micron Technology DRAM device. It belongs to the MT40A1G4RH family and is a high-density SDRAM memory chip used on memory modules (DIMMs, etc.). The part number encodes the memory family, density/organization and speed grade, but exact specifications (density, organization, data rate in MT/s, voltage, timing, and package) vary by revision and require the Micron datasheet for MT40A1G4RH-083E:B. If you need precise parameters, I can summarize the datasheet once you provide it or I can guide you on where to find the key specs (density/organization, speed, voltage, timing, package).

Features

MT40A1G4RH-083E:B is a Micron DDR3 SDRAM device with:
- Density/width: 1 Gbit per device, x4 data width (1Gbit x4)
- Interface: DDR3 SDRAM, synchronous
- Banks: 8 banks
- Voltage: DDR3L-compatible (typical 1.35V; some variants 1.5V)
- Temperature: usable in standard extended temp range (-40°C to 85°C)
- Packaging: Pb-free/RoHS compliant options
- Features: low-latency SDRAM timing, suitable for mobile/embedded memory applications
Note: exact speed grade and voltage can vary by revision; check the datasheet for your specific lot.

Package

FBGA (Fine-pitch Ball Grid Array), typically a 96-ball (8×11 mm) footprint.

Pinout

- Pin count: 60-ball FBGA (60 pins).
- Function: Micron MT40A1G4RH-083E:B is a 1 Gb, x4 DRAM device (mobile DRAM). It provides 4 data lines (DQ0–DQ3) plus the standard DRAM address/command pins (A0–A12, BA0–BA2, CS#, RAS#, CAS#, WE#) and control/power pins (CK/CK#, CKE, ODT, Vcc, Vss).

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational memory and storage semiconductor company (DRAM, NAND/NOR flash, and related solutions).

Application

MT40A1G4RH-083E:B is Micron’s 1 Gb ×4 DRAM used as system memory in low‑power designs. Applications: mobile devices (phones, tablets, wearables), embedded systems, consumer electronics, automotive infotainment, networking/storage gear, and industrial/IoT equipment needing high‑density, low‑power memory.

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