MT40A1G16KH-062E:E

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MT40A1G16KH-062E:E

IC DRAM 16GBIT PAR 96FBGA

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規格

Part Status Obsolete
Base Product Number MT40A1G16
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 1G x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x13)
Packaging Tray
Access Time 19 ns

概述

Description

MT40A1G16KH-062E:E is a Micron memory device (part of the MT40A1G16KH family). It is a synchronous DRAM die used as a building block on memory modules and subsystems.
- Organization: 1Gbit per die with a 16-bit wide data path (1Gbit × 16).
- Use: part of larger DRAM assemblies (DIMMs/SODIMMs and other memory subsystems).
- Variants: the -062E indicates a specific speed grade; the trailing :E denotes a packaging/temperature variant.
- Specs you’ll want to check: exact operating voltage, timing parameters, temperature range, and pinout in the official datasheet.
For precise electrical characteristics, packaging, and timing, refer to the MT40A1G16KH-062E:E datasheet from Micron or its distributor listings (Mouser, DigiKey, etc.).

Features

Here are the typical features for Micron MT40A1G16KH-062E:E (DDR3L SDRAM, 1Gbit per die, x16):
- Type/family: DDR3L SDRAM, low-power
- Density/Organization: 1Gbit per die with a 16-bit data width (x16)
- Banks: 8 banks
- Data rate: Up to DDR3-1600 (1600 MT/s)
- I/O width: 16 bits
- Voltage: VDD ~1.35 V (DDR3L); VPP ~2.5 V
- Burst: Burst length 4 and 8
- Timings: standard DDR3L timing (CL/D/RP typical per grade)
- Refresh: Auto-refresh / self-refresh capable
- Features: on-die termination, DLL, ZQ calibration, etc.
- Package: Ball-grid/FBGA package (identifier varies by exact line)
- Temperature grade: Industrial (-40 °C to 85 °C) indicated by the E suffix
- Applications: Low-power system memory for mobile/embedded/compact platforms
- Compliance: RoHS-compliant
Note: For exact timing parameters, voltage margins, and package details, please consult the MT40A1G16KH-062E:E datasheet.

Package

The MT40A1G16KH-062E:E is packaged in a 96-ball fine-pitch BGA (FBGA/WFBGA) package.

Pinout

MT40A1G16KH-062E:E is a Micron 1G x16 DRAM device delivered in an FBGA package (PoP-style BGA). Package pin count: 96 balls (FBGA‑96). Primary pin functions (summary):
- Power/Ground: VDD, VDDQ, VSS (grounds), VREF
- Address/Bank: A0–A15 (address lines), BA0–BA2 (bank address)
- Command/Control: CS#, RAS#, CAS#, WE#, CKE
- Clock: CK0/CK0# (and additional CK pair(s) depending on device)
- Data: DQ0–DQ15 (16-bit data bus)
- Data strobes: DQS0/DQS0# (and additional DQS pairs for byte lanes)
- On‑die termination/control: ODT, RESET#
- Misc: Mode register set pins (via command bus), test and package‑option pins as defined in the datasheet
For exact pin numbering, pad map and electrical specifics, see Micron’s official datasheet for MT40A1G16KH-062E:E.

Manufacturer

Manufacturer: Micron Technology, Inc.
What kind of company: Micron is an American multinational semiconductor firm (headquartered in Boise, Idaho) that designs and manufactures memory and storage products—primarily DRAM, NAND flash, and SSDs—serving mobile, client, data center and embedded markets.

Application

MT40A1G16KH-062E:E 是 Micron 的高带宽 DRAM 组件，主要应用于需要大量内存带宽的场景：服务器/数据中心内存模组、桌面/工作站内存条、显卡与游戏设备、网络设备、嵌入式与工业/汽车电子系统，以及 FPGA/AI 加速卡的内存需求。

Equivalent

I don’t want to give wrong equivalents — can you confirm the key specs of MT40A1G16KH-062E:E you need matched: DDR generation (DDR3/DDR4), density (1Gb×16), voltage (1.2V/1.35V), speed/timing (data rate or part speed grade) and package (FBGA ball count)? Once you confirm, I’ll list direct cross‑replacements from Samsung, SK Hynix, Nanya and others.

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