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MT29F8G16ABACAWP:C
IC FLASH 8GBIT PARALLEL 48TSOP I
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規格
| Part Status | Obsolete |
| Base Product Number | MT29F8G16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Bulk |
概述
Description
MT29F8G16ABACAWP:C is Micron’s 8‑gigabit NAND flash memory. Key points:
- Type/capacity: Multilevel-cell (MLC) NAND, 8 Gbit (1 GB raw), x16 data interface.
- Interface/standard: ONFI‑compliant NAND flash.
- Package/grade: AW P package; trailing C denotes commercial temperature range (roughly 0–70°C).
- Architecture: Page/Block organized NAND with standard commands (read, program, erase, suspend) and support for multi‑plane operations; requires ECC (usually BCH) for reliability.
- Use: Commonly used for embedded storage and as a component in SSDs; suitable for firmware/data storage.
- Datasheet: Exact page/block sizes, timings, voltages, endurance, and retention are device‑specific and should be checked in the MT29F8G16ABACAWP:C datasheet.
If you need exact specs (page size, block size, timings), I can pull the specific figures from the datasheet.
- Type/capacity: Multilevel-cell (MLC) NAND, 8 Gbit (1 GB raw), x16 data interface.
- Interface/standard: ONFI‑compliant NAND flash.
- Package/grade: AW P package; trailing C denotes commercial temperature range (roughly 0–70°C).
- Architecture: Page/Block organized NAND with standard commands (read, program, erase, suspend) and support for multi‑plane operations; requires ECC (usually BCH) for reliability.
- Use: Commonly used for embedded storage and as a component in SSDs; suitable for firmware/data storage.
- Datasheet: Exact page/block sizes, timings, voltages, endurance, and retention are device‑specific and should be checked in the MT29F8G16ABACAWP:C datasheet.
If you need exact specs (page size, block size, timings), I can pull the specific figures from the datasheet.
Features
MT29F8G16ABACAWP/C is Micron NAND flash. Key features:
- Density: 8 Gb (≈1 GB) total capacity
- Interface: x16 data bus
- Technology: MLC NAND
- Page size: 2 KB with 64-byte spare area
- Planes: 2-plane operation
- Compliance: ONFI 2.x (nomenclature varies by fab/revision)
- Supply/VIO: VCC around 3.3 V (typical 2.7–3.6 V I/O range)
- Performance (typical): Read ~25 µs; Random read/writes via page programs; Program ~350 µs; Erase ~2–4 ms
- Endurance: ~3k–5k P/E cycles (MLC range)
- Data retention: ~10 years at 25°C
- Features: Bad-block management, wear leveling, ECC support, multi-plane operations, suspend/resume, low power modes
Note: exact timings, voltage ranges, page/spare sizes, and endurance can vary by fabrication lot and revision. Refer to the official datasheet for precise specs.
- Density: 8 Gb (≈1 GB) total capacity
- Interface: x16 data bus
- Technology: MLC NAND
- Page size: 2 KB with 64-byte spare area
- Planes: 2-plane operation
- Compliance: ONFI 2.x (nomenclature varies by fab/revision)
- Supply/VIO: VCC around 3.3 V (typical 2.7–3.6 V I/O range)
- Performance (typical): Read ~25 µs; Random read/writes via page programs; Program ~350 µs; Erase ~2–4 ms
- Endurance: ~3k–5k P/E cycles (MLC range)
- Data retention: ~10 years at 25°C
- Features: Bad-block management, wear leveling, ECC support, multi-plane operations, suspend/resume, low power modes
Note: exact timings, voltage ranges, page/spare sizes, and endurance can vary by fabrication lot and revision. Refer to the official datasheet for precise specs.
Package
FBGA (Fine-pitch Ball Grid Array) package.
Pinout
- Pin count: 48 pins.
- Function: Micron MT29F8G16ABACAWP:C is a parallel NAND flash memory (8 Gb) with an 8‑bit data bus. Pinout includes:
- Data I/O: DQ0–DQ7
- Address inputs: A0–An (address lines)
- Control: CLE (command latch enable), ALE (address latch enable), WE# (write enable), RE# (read enable), CE# (chip enable), WP# (write protect)
- Status: R/B# (ready/busy)
- Power/ground: Vcc and GND (and NC as not connected)
Note: exact number of address lines depends on the device size; the above covers the typical NAND‑flash pin roles.
- Function: Micron MT29F8G16ABACAWP:C is a parallel NAND flash memory (8 Gb) with an 8‑bit data bus. Pinout includes:
- Data I/O: DQ0–DQ7
- Address inputs: A0–An (address lines)
- Control: CLE (command latch enable), ALE (address latch enable), WE# (write enable), RE# (read enable), CE# (chip enable), WP# (write protect)
- Status: R/B# (ready/busy)
- Power/ground: Vcc and GND (and NC as not connected)
Note: exact number of address lines depends on the device size; the above covers the typical NAND‑flash pin roles.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM and NAND flash) for electronics and data storage.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM and NAND flash) for electronics and data storage.
Application
- Embedded storage for mobile devices, cameras, and other consumer electronics
- NAND-based storage products (USB drives, SD/memory cards)
- Solid-state drives (SSDs) and embedded SSD modules
- Automotive applications (infotainment, telematics) and industrial/IoT
- Firmware/boot storage and data logging in microcontrollers/SoCs
- NAND-based storage products (USB drives, SD/memory cards)
- Solid-state drives (SSDs) and embedded SSD modules
- Automotive applications (infotainment, telematics) and industrial/IoT
- Firmware/boot storage and data logging in microcontrollers/SoCs
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