圖片僅供參考
MT29F8G08ABACAWP:C
IC FLASH 8GBIT PARALLEL 48TSOP I
- 製造商
- 製造商。 部分 #MT29F8G08ABACAWP:C
- 包
- 資料表
- 有現貨的5913
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Part Status | Obsolete |
| Base Product Number | MT29F8G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 8Gbit |
| Memory Organization | 1G x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
概述
Description
MT29F8G08ABACAWP:C is Micron’s 8 Gbit NAND flash memory device. It’s a single‑die, multi‑level cell (MLC) NAND with an ONFI‑compatible interface used for embedded storage and SSDs. It stores data in blocks/pages, supports standard NAND operations (read, program, erase), and requires ECC for data reliability. The suffix AW P:C encodes packaging and temperature grade. For exact specs—capacity, page/block size, endurance, voltages, timing—consult the MT29F8G08ABACAWP:C datasheet.
Features
Here are the typical features of Micron MT29F8G08ABACAWP:C (8‑Gbit NAND, MLC):
- Density: 8 Gbit (1 GB) NAND flash
- Architecture: Multi‑level cell (MLC) NAND with multi‑plane capability for high throughput
- Interface: ONFI‑compliant, x8 I/O data bus
- Page/Out‑of‑band: Page size and OOB area designed for ECC (exact sizes per page vary by part, see datasheet)
- Reliability features: Bad block management, ECC support (controller ECC required), data integrity features
- Operating voltages: Typical 3.3V I/O supply (core/other voltages per spec)
- Temperature grades: Commercial and industrial variants (range includes -40°C to 85°C in industrial; broader ranges in other grades)
- Endurance/retention: P/E cycles in the thousands (MLC) with long data retention under rated conditions
- Packaging: For this suffix, typically a standard NAND packaging option (consult datasheet for exact package code)
Note: Exact page size, block size, P/E limits, and voltage specs vary by revision/grade. For precise numbers, please refer to the MT29F8G08ABACAWP:C datasheet.
- Density: 8 Gbit (1 GB) NAND flash
- Architecture: Multi‑level cell (MLC) NAND with multi‑plane capability for high throughput
- Interface: ONFI‑compliant, x8 I/O data bus
- Page/Out‑of‑band: Page size and OOB area designed for ECC (exact sizes per page vary by part, see datasheet)
- Reliability features: Bad block management, ECC support (controller ECC required), data integrity features
- Operating voltages: Typical 3.3V I/O supply (core/other voltages per spec)
- Temperature grades: Commercial and industrial variants (range includes -40°C to 85°C in industrial; broader ranges in other grades)
- Endurance/retention: P/E cycles in the thousands (MLC) with long data retention under rated conditions
- Packaging: For this suffix, typically a standard NAND packaging option (consult datasheet for exact package code)
Note: Exact page size, block size, P/E limits, and voltage specs vary by revision/grade. For precise numbers, please refer to the MT29F8G08ABACAWP:C datasheet.
Package
It uses a 52-ball FBGA package (Micron VFBGA).
Pinout
- Pin count: 48 pins (parallel NAND flash package)
- Function: 8Gb (1GB) parallel NAND flash memory with 8-bit data bus. Uses address lines A0–A23 and standard NAND control signals: CLE, ALE, WE#, RE#, CE#, WP#, R/B#, plus Vcc and GND; IO0–IO7 (DQ0–DQ7) for data.
- Function: 8Gb (1GB) parallel NAND flash memory with 8-bit data bus. Uses address lines A0–A23 and standard NAND control signals: CLE, ALE, WE#, RE#, CE#, WP#, R/B#, plus Vcc and GND; IO0–IO7 (DQ0–DQ7) for data.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: A US-based multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash) for electronics and data centers.
- What kind of company: A US-based multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND/NOR flash) for electronics and data centers.
Application
MT29F8G08ABACAWP:C is an 8‑Gbit NAND flash device. Typical applications include mass storage and firmware storage for consumer electronics and embedded systems: SSDs, USB drives, memory cards, mobile devices, digital cameras/camcorders, set‑top boxes, gaming consoles, and industrial/automotive embedded storage.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix
-
MX29F800CBTI-70G
Macronix