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MT29F64G08CBABBWPR:B
IC FLASH 64GBIT PAR 48TSOP I
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規格
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 64Gbit |
| Memory Organization | 8G x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | MT29F64G08 |
概述
Description
The MT29F64G08CBABBWPR:B is a NAND flash memory chip manufactured by Micron Technology. It's part of the MT29 series, which is known for high-density storage solutions. This specific model offers a storage capacity of 64 gigabits and is organized in a structure that supports 8-bit data access. The chip is designed for use in applications requiring reliable, non-volatile storage, such as solid-state drives, mobile devices, and embedded systems.
Key features include high-speed data transfer rates, low power consumption, and advanced error correction capabilities, which enhance data integrity and reliability. The chip operates within a wide temperature range, making it suitable for various industrial and consumer applications. It also supports multiple read and write cycles, ensuring longevity and durability. The "B" at the end of its model number often indicates a specific revision or version, which might entail optimizations or improvements over previous versions.
Overall, the MT29F64G08CBABBWPR:B is a robust and versatile NAND flash memory solution tailored for modern storage needs.
Key features include high-speed data transfer rates, low power consumption, and advanced error correction capabilities, which enhance data integrity and reliability. The chip operates within a wide temperature range, making it suitable for various industrial and consumer applications. It also supports multiple read and write cycles, ensuring longevity and durability. The "B" at the end of its model number often indicates a specific revision or version, which might entail optimizations or improvements over previous versions.
Overall, the MT29F64G08CBABBWPR:B is a robust and versatile NAND flash memory solution tailored for modern storage needs.
Features
The MT29F64G08CBABBWPR:B is a NAND Flash memory chip manufactured by Micron Technology. It features a storage capacity of 64Gb (gigabits) and is organized in a x8 configuration, meaning it can transfer 8 bits of data simultaneously. This component is built using a 2-bit per cell (MLC) architecture, which balances cost and performance. The NAND flash operates at a voltage range typically around 3.3V, facilitating compatibility with a variety of systems.
It is designed with high endurance and reliable data retention, making it suitable for a wide range of applications, including consumer electronics, industrial applications, and solid-state drives (SSDs). The chip supports asynchronous data transfer, which is common in NAND flash memory, allowing for efficient data handling. The package type for this model is typically a TSOP (Thin Small-Outline Package), which provides a compact form factor for integration into electronic devices.
Overall, the MT29F64G08CBABBWPR:B combines high storage capacity and reliable performance, making it a versatile option for various data storage needs.
It is designed with high endurance and reliable data retention, making it suitable for a wide range of applications, including consumer electronics, industrial applications, and solid-state drives (SSDs). The chip supports asynchronous data transfer, which is common in NAND flash memory, allowing for efficient data handling. The package type for this model is typically a TSOP (Thin Small-Outline Package), which provides a compact form factor for integration into electronic devices.
Overall, the MT29F64G08CBABBWPR:B combines high storage capacity and reliable performance, making it a versatile option for various data storage needs.
Package
The MT29F64G08CBABBWPR:B is a NAND Flash memory chip from Micron Technology. It typically comes in a Ball Grid Array (BGA) package, which is a surface mount package used for integrated circuits. This packaging allows for efficient use of space and enhanced thermal and electrical performance.
Pinout
The MT29F64G08CBABBWPR:B is a NAND Flash memory chip manufactured by Micron Technology. It generally uses a TSOP or BGA package. While the exact pin count can vary slightly depending on the specific package type, a typical BGA package for NAND Flash might have around 63 to 67 pins.
Functions of the pins generally include:
- Power and Ground Pins: VCC, VSS for power supply.
- Data I/O Pins: I/O pins (e.g., I/O0-I/O7) for data input and output.
- Control Pins:
- CE# (Chip Enable): Activates the chip.
- RE# (Read Enable): Initiates a data read operation.
- WE# (Write Enable): Initiates a data write operation.
- ALE (Address Latch Enable): Latches address inputs.
- CLE (Command Latch Enable): Latches command inputs.
- WP# (Write Protect): Protects the memory from write operations.
- R/B# (Ready/Busy): Indicates the status of the device.
- VCCQ: I/O Power Supply.
For precise pin count and configuration, refer to the specific datasheet from Micron, as it will provide the most accurate and detailed information.
Functions of the pins generally include:
- Power and Ground Pins: VCC, VSS for power supply.
- Data I/O Pins: I/O pins (e.g., I/O0-I/O7) for data input and output.
- Control Pins:
- CE# (Chip Enable): Activates the chip.
- RE# (Read Enable): Initiates a data read operation.
- WE# (Write Enable): Initiates a data write operation.
- ALE (Address Latch Enable): Latches address inputs.
- CLE (Command Latch Enable): Latches command inputs.
- WP# (Write Protect): Protects the memory from write operations.
- R/B# (Ready/Busy): Indicates the status of the device.
- VCCQ: I/O Power Supply.
For precise pin count and configuration, refer to the specific datasheet from Micron, as it will provide the most accurate and detailed information.
Manufacturer
The MT29F64G08CBABBWPR:B is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is an American multinational corporation headquartered in Boise, Idaho. It is a prominent company in the semiconductor industry, specializing in memory and storage solutions. Micron produces a wide range of products, including DRAM, NAND flash memory, and other semiconductor devices used in computing, consumer, networking, automotive, industrial, and mobile markets. The company is known for its innovation in memory technology and plays a significant role in the development of semiconductor solutions worldwide.
Application
The MT29F64G08CBABBWPR:B is a NAND flash memory chip commonly used in various applications requiring high-density data storage. Key application areas include consumer electronics such as smartphones, tablets, and laptops; industrial applications like data logging and control systems; automotive systems for infotainment and navigation; and enterprise solutions such as SSDs and data centers. Its high storage capacity and reliability make it suitable for devices needing efficient data management and quick access.
Equivalent
The MT29F64G08CBABBWPR:B is a NAND Flash Memory chip from Micron. Equivalent products can be found from other manufacturers like Samsung, Toshiba (now Kioxia), and Western Digital (SanDisk). For instance, Samsung's K9GAG08U0F and Toshiba's TC58TEG5DCLTA00 are similar in terms of NAND technology, capacity, and intended applications. Always check the datasheets for precise specifications and compatibilities.
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