圖片僅供參考

MT29F64G08CBABAWP:B

Name: MT29F64G08CBABAWP:B
Rating: 4.7 (12 reviews)

IC FLSH 64GBIT PARALLEL 48TSOP I

製造商
製造商。部分 #MT29F64G08CBABAWP:B
包 48-TFSOP
資料表
有現貨的3177

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Package	Bulk
ProductStatus	Obsolete
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND
MemorySize	64Gb (8G x 8)
MemoryInterface	Parallel
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	0°C ~ 70°C (TA)
MountingType	Surface Mount
Package/Case	48-TFSOP (0.724, 18.40mm Width)

概述

Description

The MT29F64G08CBABAWP:B is a NAND flash memory chip manufactured by Micron Technology. It features a 64Gb (gigabit) capacity with a 4-bit per cell architecture, enabling high-density storage. This chip is designed for various applications, including consumer electronics, mobile devices, and automotive systems, due to its fast read and write speeds, low power consumption, and reliability.
The device operates on a serial interface, allowing for efficient data transfer between the memory and host devices. It supports advanced features like error correction, wear leveling, and bad block management, enhancing performance and longevity. The package type is typically a BGA (Ball Grid Array), facilitating easy integration into compact designs.
Overall, the MT29F64G08CBABAWP:B stands out for its scalability, making it suitable for applications requiring robust storage solutions.

Features

The MT29F64G08CBABAWP:B is a 64Gb NAND Flash memory device from Micron Technology, designed for high-density storage applications. Key features include:
- Density: 64 gigabits (8GB) of storage capacity.
- Interface: Supports ONFI 2.1 and compatible with various interfaces including NAND Flash interface.
- Data Transfer Rates: Offers high-speed data transfer rates, enhancing performance in data-intensive applications.
- Endurance: Designed for high endurance with a specified program/erase (P/E) cycle life, making it suitable for demanding write-intensive applications.
- Form Factor: Available in a compact BGA package, facilitating easy integration into various devices.
- Power Efficiency: Low power consumption modes, contributing to energy savings in mobile and embedded applications.
- Reliability: Features error correction codes (ECC) and wear leveling to enhance data integrity and lifespan.
This device is commonly used in smartphones, tablets, and other consumer electronics for reliable flash memory storage.

Package

The MT29F64G08CBABAWP:B is packaged in a 48-ball BGA (Ball Grid Array) format. This type of package is designed for high-density applications, providing compact dimensions and efficient thermal performance.

Pinout

The MT29F64G08CBABAWP:B is a NAND flash memory chip from Micron Technology, specifically part of the 64Gb NAND flash family. It features a total of 48 pins.
The primary functions of the pins include:
1. Data Input/Output (DQ0-DQ7): These pins are used for data transfer.
2. Command Input (CLE): Used to indicate that the data on the DQ lines is a command.
3. Address Input (ALE): Indicates that the data on the DQ lines is an address.
4. Chip Enable (CE#): Activates the chip for read/write operations.
5. Write Enable (WE#): Signals when to write data to the memory.
6. Read Enable (RE#): Indicates when to read data from the memory.
7. Ready/Busy (R/B#): Indicates the status of the chip (ready or busy).
8. Vcc and Vss: Power supply and ground connections.
This configuration facilitates efficient data storage and retrieval in various applications, including mobile devices and consumer electronics.

Manufacturer

The manufacturer of the MT29F64G08CBABAWP:B is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of semiconductor devices, primarily memory and storage solutions. Founded in 1978, the company is known for its innovation in DRAM, NAND flash memory, and other memory technologies. Micron serves a wide range of markets, including computing, consumer electronics, automotive, and industrial applications. The MT29F64G08CBABAWP:B is a NAND flash memory chip, reflecting Micron's expertise in high-performance memory solutions used in various electronic devices.

Application

The MT29F64G08CBABAWP:B is a NAND flash memory chip commonly used in various applications, including mobile devices, consumer electronics, solid-state drives (SSDs), industrial automation, automotive systems, and networking equipment. Its features support high-density storage and fast data access, making it suitable for embedded systems, data logging, and multimedia applications.

Equivalent

The MT29F64G08CBABAWP:B chip is a 64Gb NAND flash memory chip. Equivalent products include the Samsung K9GAG08U0M, SK Hynix H26M51003F4, and Toshiba TH58NVG5D2KL. Make sure to verify specific pin configurations, voltage levels, and performance parameters for compatibility in your application.