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MT29F64G08AFAAAWP-ITZ:A
IC FLASH 64GBIT PAR 48TSOP I
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規格
| Part Status | Last Time Buy |
| Base Product Number | MT29F64G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 64Gbit |
| Memory Organization | 8G x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
概述
Description
The MT29F64G08AFAAAWP-ITZ is a NAND Flash memory device manufactured by Micron Technology. It features a 64Gb (gigabit) capacity and is designed for high-performance applications. This device utilizes advanced 3D NAND technology, which enhances storage density and reliability while reducing power consumption.
Key specifications include a NAND interface, supporting page sizes of 2KB/4KB and block sizes of 128KB. The device is optimized for read and write speeds, making it suitable for applications such as smartphones, tablets, and other consumer electronics.
The ITZ variant signifies that the chip is part of the industrial temperature range, ensuring reliable operation in extreme conditions. The packaging is typically BGA (Ball Grid Array), facilitating easier integration into various circuit designs.
Overall, the MT29F64G08AFAAAWP-ITZ is ideal for applications requiring robust, high-speed storage solutions.
Key specifications include a NAND interface, supporting page sizes of 2KB/4KB and block sizes of 128KB. The device is optimized for read and write speeds, making it suitable for applications such as smartphones, tablets, and other consumer electronics.
The ITZ variant signifies that the chip is part of the industrial temperature range, ensuring reliable operation in extreme conditions. The packaging is typically BGA (Ball Grid Array), facilitating easier integration into various circuit designs.
Overall, the MT29F64G08AFAAAWP-ITZ is ideal for applications requiring robust, high-speed storage solutions.
Features
The MT29F64G08AFAAAWP-ITZ:A is a 64Gb (8GB) NAND Flash memory device from Micron Technology. Key features include:
1. Interface: Supports ONFI (Open NAND Flash Interface) and provides a high-speed parallel interface.
2. Architecture: It utilizes a 4-bit per cell (QLC) architecture, enabling higher density storage.
3. Organization: It comes in a x8 and x16 organization, allowing flexible integration in various applications.
4. Endurance: Designed for high endurance, suitable for applications that demand reliability.
5. Data Retention: Offers a data retention period of up to 10 years under specified conditions.
6. Power Supply: Operates at a supply voltage of 2.7V to 3.6V, making it compatible with low-power applications.
7. Temperature Range: Industrial-grade temperature range (-40°C to +85°C) suitable for harsh environments.
8. Package: Available in a 48-ball FBGA package for compact designs.
This device is ideal for applications like consumer electronics, embedded systems, and industrial equipment requiring reliable, high-density storage solutions.
1. Interface: Supports ONFI (Open NAND Flash Interface) and provides a high-speed parallel interface.
2. Architecture: It utilizes a 4-bit per cell (QLC) architecture, enabling higher density storage.
3. Organization: It comes in a x8 and x16 organization, allowing flexible integration in various applications.
4. Endurance: Designed for high endurance, suitable for applications that demand reliability.
5. Data Retention: Offers a data retention period of up to 10 years under specified conditions.
6. Power Supply: Operates at a supply voltage of 2.7V to 3.6V, making it compatible with low-power applications.
7. Temperature Range: Industrial-grade temperature range (-40°C to +85°C) suitable for harsh environments.
8. Package: Available in a 48-ball FBGA package for compact designs.
This device is ideal for applications like consumer electronics, embedded systems, and industrial equipment requiring reliable, high-density storage solutions.
Package
The MT29F64G08AFAAAWP-ITZ:A is packaged in a WLCSP (Wafer-Level Chip Scale Package) form factor, specifically a 48-ball configuration. This compact package is designed for space-constrained applications, providing a small footprint while maintaining performance and reliability.
Pinout
The MT29F64G08AFAAAWP-ITZ:A is a NAND flash memory device manufactured by Micron Technology. It features a pin count of 48 pins.
This device is designed for high-density storage applications and provides functions such as:
1. Data Storage: It offers 64 Gb (gigabits) of storage capacity.
2. Input/Output Operations: The device uses a multiplexed I/O interface for data transfer.
3. Memory Organization: It is organized in pages and blocks, facilitating efficient read/write operations.
4. Error Correction: Supports advanced error correction code (ECC) to ensure data integrity.
5. Low Power Consumption: The device operates at low voltage, making it suitable for portable applications.
Overall, the MT29F64G08AFAAAWP-ITZ:A is ideal for use in mobile devices, SSDs, and other embedded systems requiring reliable and high-capacity memory solutions.
This device is designed for high-density storage applications and provides functions such as:
1. Data Storage: It offers 64 Gb (gigabits) of storage capacity.
2. Input/Output Operations: The device uses a multiplexed I/O interface for data transfer.
3. Memory Organization: It is organized in pages and blocks, facilitating efficient read/write operations.
4. Error Correction: Supports advanced error correction code (ECC) to ensure data integrity.
5. Low Power Consumption: The device operates at low voltage, making it suitable for portable applications.
Overall, the MT29F64G08AFAAAWP-ITZ:A is ideal for use in mobile devices, SSDs, and other embedded systems requiring reliable and high-capacity memory solutions.
Manufacturer
The manufacturer of the MT29F64G08AFAAAWP-ITZ:A is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a range of products, including DRAM, NAND Flash memory, and 3D NAND technologies, which are used in various applications such as computing, mobile devices, automotive systems, and data centers. Micron is known for its innovation and has a significant role in advancing memory technology. Established in 1978 and headquartered in Boise, Idaho, Micron operates manufacturing facilities and research centers worldwide, making it a prominent player in the semiconductor market.
Application
The MT29F64G08AFAAAWP-ITZ:A is a NAND flash memory chip commonly used in various applications, including mobile devices, consumer electronics, industrial automation, automotive systems, and storage solutions. Its high density and reliability make it suitable for data storage in smartphones, tablets, SSDs, and embedded systems, supporting tasks such as firmware storage, data logging, and multimedia content storage.
Equivalent
The MT29F64G08AFAAAWP-ITZ is a 64Gb NAND Flash memory chip. Equivalent products include:
1. Samsung K9GAG08U0M
2. Hynix H27UCG8T2BTR
3. Toshiba TH58NVG4D2HBA
4. Micron MT29F64G08CFAAWP
Always verify compatibility based on specifications and intended application.
1. Samsung K9GAG08U0M
2. Hynix H27UCG8T2BTR
3. Toshiba TH58NVG4D2HBA
4. Micron MT29F64G08CFAAWP
Always verify compatibility based on specifications and intended application.
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