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MT29F512G08CMCEBJ4-37ITR:E

Name: MT29F512G08CMCEBJ4-37ITR:E
Rating: 4.7 (12 reviews)

IC FLASH 512GBIT PAR 132VBGA

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規格

Part Status	Obsolete
Base Product Number	MT29F512G08
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND (MLC)
Memory Size	512Gbit
Memory Organization	64G x 8
Memory Interface	Parallel
Clock Frequency	267 MHz
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	132-VBGA
Supplier Device Package	132-VBGA (12x18)
Packaging	Tray

概述

Description

The MT29F512G08CMCEBJ4-37ITR:E is a NAND Flash memory device produced by Micron Technology. It features a capacity of 512 Gb (64 GB) and is designed for a variety of applications, including mobile devices, consumer electronics, and industrial systems.
This specific model operates with a NAND Flash architecture, offering high-speed data transfer rates and low power consumption, which makes it suitable for demanding environments. The "-37" in the part number indicates a maximum read speed of 37 ns, while "ITR" denotes the packaging type (typically indicating a tape and reel package for surface mounting).
The "E" at the end signifies that it is an extended temperature range device, making it capable of operating in harsher conditions. This flash memory is commonly used for data storage, firmware, and other applications requiring reliable non-volatile memory solutions.
Overall, the MT29F512G08CMCEBJ4-37ITR:E combines performance, endurance, and efficiency, making it a suitable choice for modern electronic devices.

Features

The MT29F512G08CMCEBJ4-37ITR:E is a NAND Flash memory device from Micron Technology. It features a capacity of 512 Gb (64 GB) and utilizes a 3D NAND architecture, which enhances performance and endurance.
Key features include:
- Interface: Supports ONFI (Open NAND Flash Interface) standards, allowing for compatibility with various controllers.
- Page Size: Typically 16 KB, facilitating efficient read and write operations.
- Block Size: Contains 128 blocks with each block comprising multiple pages, optimizing storage management.
- Endurance: Designed for high endurance, supporting a large number of write/erase cycles.
- Data Retention: Offers reliable data retention, typically up to 10 years.
- Temperature Range: Rated for industrial-grade temperatures (e.g., -40°C to +85°C).
- Power Management: Low power consumption modes enhance energy efficiency.
This NAND Flash is suitable for applications in consumer electronics, automotive, and industrial sectors, where reliable and high-performance memory solutions are essential.

Package

The MT29F512G08CMCEBJ4-37ITR:E is packaged in a TSOP (Thin Small Outline Package) format, specifically TSOP-I. This type of package is designed for high-density memory chips, providing a compact footprint suitable for various applications.

Pinout

The MT29F512G08CMCEBJ4-37ITR:E is a NAND Flash memory chip with a pin count of 48. It is part of the Micron Technology's NAND Flash family and features a 512Gb (64GB) capacity.
The main functions of the pins include power supply (VCC, VSS), command and address input/output (I/O pins), chip enable (CE), write enable (WE), read enable (RE), and a variety of control signals. These control signals are used for addressing, reading, writing, and erasing data. The device supports serial interface protocols for communication, making it suitable for various applications in consumer and industrial electronics.

Manufacturer

The manufacturer of the MT29F512G08CMCEBJ4-37ITR:E is Micron Technology, Inc. Micron is a leading American provider of semiconductor products, specializing in memory and storage solutions, including DRAM, NAND flash memory, and other memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of industries such as computing, mobile, automotive, and consumer electronics. The company is known for its innovation in memory technology and plays a significant role in the global semiconductor market.

Application

The MT29F512G08CMCEBJ4-37ITR:E is a NAND flash memory chip primarily used in applications such as smartphones, tablets, solid-state drives (SSDs), embedded systems, and consumer electronics. It offers high-density storage for data-intensive applications, including multimedia, firmware, operating systems, and mobile applications, enabling fast data access and reliable performance in compact devices.

Equivalent

The MT29F512G08CMCEBJ4-37ITR:E chip is a 512Gb NAND flash memory device. Equivalent products may include other 512Gb NAND flash chips from manufacturers like Samsung (K9GAG08U0M), SK Hynix (H26M51003M283), and Toshiba (TH58NVG5D2FLTA). Always verify compatibility with your specific application requirements.