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MT29F4G08ABBDAH4:D
IC FLASH 4GBIT PARALLEL 63VFBGA
- 製造商
- 製造商。 部分 #MT29F4G08ABBDAH4:D
- 包 63-VFBGA
- 資料表
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規格
| Supplier | Micron Technology Inc. |
| Package | Bulk |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 4Gb (512M x 8) |
| MemoryInterface | Parallel |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 63-VFBGA |
概述
Description
MT29F4G08ABBDAH4:D? is Micron’s NAND flash memory device (4 Gbit) from the MT29F family. It provides non-volatile storage using NAND flash technology and supports the standard NAND flash command set with an ONFI-compatible interface. It supports page-level read/write, block-level erase, and bad-block management, making it suitable for embedded storage, memory cards, and similar applications. The D suffix indicates a packaging/revision variant of the part. For exact specs (page size, block size, voltage, timing, endurance, ONFI version), consult the MT29F4G08ABBDAH4 datasheet.
Features
MT29F4G08ABBDAH4:D features (concise):
- 4 Gbit NAND flash (512 MB) with x8 data I/O
- ONFI-compatible interface
- Page size: 2 KB data with ~64 B OOB (spare)
- Multi-plane operation (e.g., 2-plane for higher throughput)
- Core operations: read, program, erase; random and sequential access
- Cache/program and copy-back programming capabilities
- Bad-block management and ECC support (BCH) with controller
- Typical endurance around 100K P/E cycles; data retention ~10 years (at 25°C)
- 48‑pin package (TSOP) (standard Micron NAND packaging)
Note: exact timings and some parameter values vary by device revision and operating conditions; consult the datasheet for precise figures.
- 4 Gbit NAND flash (512 MB) with x8 data I/O
- ONFI-compatible interface
- Page size: 2 KB data with ~64 B OOB (spare)
- Multi-plane operation (e.g., 2-plane for higher throughput)
- Core operations: read, program, erase; random and sequential access
- Cache/program and copy-back programming capabilities
- Bad-block management and ECC support (BCH) with controller
- Typical endurance around 100K P/E cycles; data retention ~10 years (at 25°C)
- 48‑pin package (TSOP) (standard Micron NAND packaging)
Note: exact timings and some parameter values vary by device revision and operating conditions; consult the datasheet for precise figures.
Package
TSOP-48 (48-pin Thin Small Outline Package)
Pinout
Pin count: 48 pins (TSOP-48).
Function: Micron MT29F4G08ABBDAH4:D is a 4‑Gbit NAND flash memory with a parallel 8‑bit data bus. It uses standard NAND control signals (CLE, ALE, /WE, /RE, /CS, /WP), 8 data I/O lines (DQ0–DQ7), Ready/Busy, plus Vcc and GND.
Function: Micron MT29F4G08ABBDAH4:D is a 4‑Gbit NAND flash memory with a parallel 8‑bit data bus. It uses standard NAND control signals (CLE, ALE, /WE, /RE, /CS, /WP), 8 data I/O lines (DQ0–DQ7), Ready/Busy, plus Vcc and GND.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- Company type: American multinational semiconductor company specializing in memory and storage technologies (DRAM, NAND/NOR flash) for computers, mobile, and data-center applications.
- Company type: American multinational semiconductor company specializing in memory and storage technologies (DRAM, NAND/NOR flash) for computers, mobile, and data-center applications.
Application
MT29F4G08ABBDAH4:D is a 4 Gbit NAND flash (x8 I/O, likely MLC). Applications: embedded storage in consumer electronics (smartphones, tablets, digital cameras, camcorders, set-top boxes, printers, routers); removable storage (USB drives, memory-card interfaces); firmware storage and data logging in industrial/automotive electronics; entry-level SSDs and other non-volatile memory needs.
Equivalent
MT29F4G08ABBDAH4:D is Micron’s 4-Gbit NAND Flash, x8. Equivalent devices are other 4-Gbit, x8 NAND Flash parts that comply with ONFI 2.x (or Toggle) from other vendors. There is no single fixed cross-reference. For exact equivalents, use Micron’s Cross-Reference tool or distributor catalogs with your package (TSOP/WSON) and voltage (1.8V/3.3V) to map to equivalent parts.
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