MT29F4G08ABAEAH4-IT:E

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MT29F4G08ABAEAH4-IT:E

IC FLASH 4GBIT PARALLEL 63VFBGA

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  • 包 63-VFBGA
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規格

Package Bulk
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 4Gb (512M x 8)
MemoryInterface Parallel
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

概述

Description

MT29F4G08ABAEAH4-IT:E is Micron’s 4‑Gbit NAND flash memory device. It uses multi‑level cell (MLC) technology and an ONFI‑compatible asynchronous NAND interface. The -IT:E suffix indicates an industrial/extended temperature variant suitable for harsher environments. It is designed for embedded storage and similar applications, offering standard NAND features such as page program, block erase, bad-block management, and multi‑plane operation to boost throughput, with ECC/error management handled by the controller. Typical page and block geometries are consistent with Micron’s 4‑Gbit NAND families, but exact organization (page size, number of pages per block, planes) varies by revision. This part is commonly used in SSDs, USB drives, memory cards, and other embedded storage solutions. For precise specs (page size, blocks per plane, endurance, timing), refer to the MT29F4G08ABAEAH4-IT:E datasheet.

Features

MT29F4G08ABAEAH4-IT:E is Micron’s 4 Gbit NAND flash. Key features:
- Density: 4 Gbit (≈512 MB) NAND flash
- Interface: x8 data bus; ONFI-compliant
- Technology: MLC NAND
- Page/Spare: 2 KB page size with 64-byte spare area
- Blocks: 64 pages per block; ~4,096 blocks per die
- Operation: 2-plane / multi-plane read/programmable erase
- Temperature: Industrial range, -40°C to 85°C
- Voltage: Vcc = 3.3V; I/O typically 3.3V
- Features: bad block management, wear leveling, ECC support via controller, standard NAND command set (read/ program/erase)
- Packaging/Use: suitable for embedded and storage applications requiring reliable, high-density NAND
Note: exact timing, ECC strength, and electrical specs vary by revision and system design; consult the official datasheet for precise numbers.

Package

TSOP-48 (48-pin Thin Small Outline Package).

Pinout

- Pin count: 48 pins (TSOP II package)
- Function: Parallel NAND flash memory (4 Gbit, x8 data width). Stores non-volatile data. Uses standard NAND signals: DQ0–DQ7 I/O, CE (chip enable), CLE (command latch enable), ALE (address latch enable), WE (write enable), RE (read enable), WP (write protect), R/B (ready/busy), plus Vcc/Vccq and GND. Address lines typically A0–A12/A0–A13. Industrial temp variant (-40 to 85°C) with lead-free package.

Manufacturer

Manufacturer: Micron Technology, Inc.
Micron is an American multinational semiconductor company that designs and manufactures memory and storage solutions, including DRAM and NAND flash memory. It is one of the world's largest memory manufacturers.

Application

MT29F4G08ABAEAH4-IT:E is a 4 Gbit NAND flash memory. Common application areas:
- Embedded storage in consumer electronics (digital cameras, camcorders, set-top boxes, game consoles)
- Portable storage media and memory cards (USB drives, SD/CF cards)
- Nonvolatile memory for embedded/industrial and automotive electronics
- Raw NAND used in SSDs and storage modules with appropriate controllers

Equivalent

MT29F4G08ABAEAH4-IT:E is a 4‑Gbit (512‑MB) parallel NAND Flash, x8, 3.3V with industrial temp. Common cross‑vendor equivalents include:
- Samsung K9F4G08U0M
- Macronix MX29F4G08AB
Note: exact drop‑in compatibility depends on page size, ECC, timing, and packaging—verify with distributor cross‑reference tables.

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