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MT29F4G08ABAEAH4:E
IC FLASH 4GBIT PARALLEL 63VFBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT29F4G08 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Bulk |
概述
Description
The MT29F4G08ABAEAH4:E is a specific model of NAND Flash memory manufactured by Micron Technology. It belongs to the family of non-volatile memory devices, which are used for storing data that must be retained even when a device is powered off. This particular model features a memory capacity of 4 gigabits and is organized into pages and blocks, allowing for efficient data management and access.
Key characteristics of the MT29F4G08ABAEAH4:E include its high-density storage capability and endurance, which refers to the number of write/erase cycles the memory can undergo before it becomes unreliable. It utilizes a multi-level cell (MLC) technology, which stores more than one bit per cell, enhancing its data density compared to single-level cell (SLC) technologies.
The device operates on standard NAND interface protocols, making it compatible with a wide range of applications, from consumer electronics to industrial and automotive systems. This model is also designed to support error correction codes (ECC) to maintain data integrity over time. Additionally, its small form factor and low power consumption make it suitable for use in embedded systems and portable devices.
Key characteristics of the MT29F4G08ABAEAH4:E include its high-density storage capability and endurance, which refers to the number of write/erase cycles the memory can undergo before it becomes unreliable. It utilizes a multi-level cell (MLC) technology, which stores more than one bit per cell, enhancing its data density compared to single-level cell (SLC) technologies.
The device operates on standard NAND interface protocols, making it compatible with a wide range of applications, from consumer electronics to industrial and automotive systems. This model is also designed to support error correction codes (ECC) to maintain data integrity over time. Additionally, its small form factor and low power consumption make it suitable for use in embedded systems and portable devices.
Features
The MT29F4G08ABAEAH4:E is a NAND Flash memory chip manufactured by Micron Technology. It features a capacity of 4Gb (gigabits) and uses SLC (Single-Level Cell) technology, which stores one bit of data per cell, offering higher endurance and reliability. The chip is organized as 512Mb x 8, indicating an 8-bit interface.
This device supports asynchronous operations, providing flexibility in data management and storage. It operates at a voltage range of 2.7V to 3.6V, making it suitable for various electronic applications. The chip comes in a TSOP (Thin Small Outline Package) form factor, which is compact and widely used in consumer electronics.
MT29F4G08ABAEAH4:E offers features like error correction code (ECC) support, wear leveling, and bad block management to enhance data integrity and longevity. These features make it ideal for embedded systems, industrial applications, and consumer electronics requiring robust data storage solutions.
This device supports asynchronous operations, providing flexibility in data management and storage. It operates at a voltage range of 2.7V to 3.6V, making it suitable for various electronic applications. The chip comes in a TSOP (Thin Small Outline Package) form factor, which is compact and widely used in consumer electronics.
MT29F4G08ABAEAH4:E offers features like error correction code (ECC) support, wear leveling, and bad block management to enhance data integrity and longevity. These features make it ideal for embedded systems, industrial applications, and consumer electronics requiring robust data storage solutions.
Package
The MT29F4G08ABAEAH4:E is a NAND Flash memory chip with a package type of 48-TSOP1. This Thin Small Outline Package (TSOP) is commonly used for memory devices, offering a compact form suitable for high-density storage applications.
Pinout
The MT29F4G08ABAEAH4:E is a NAND Flash memory chip manufactured by Micron Technology. This model typically comes in a package with 48 pins, which is a common configuration for NAND flash devices.
Key functions of these pins include:
- Data Inputs/Outputs (I/O0-I/O7): 8 pins for bidirectional data transfer.
- CLE (Command Latch Enable): Used to latch command inputs.
- ALE (Address Latch Enable): Used to latch address inputs.
- CE# (Chip Enable): Activates the memory device.
- RE# (Read Enable): Controls data output during read operations.
- WE# (Write Enable): Controls data input during write operations.
- WP# (Write Protect): Protects against accidental programming/erasure.
- R/B# (Ready/Busy): Indicates the status of the device operations.
- VCC: Power supply input.
- VSS: Ground reference.
These pin functions are integral to managing data storage operations in NAND flash memory, allowing for reading, writing, and erasing processes necessary for device functionality.
Key functions of these pins include:
- Data Inputs/Outputs (I/O0-I/O7): 8 pins for bidirectional data transfer.
- CLE (Command Latch Enable): Used to latch command inputs.
- ALE (Address Latch Enable): Used to latch address inputs.
- CE# (Chip Enable): Activates the memory device.
- RE# (Read Enable): Controls data output during read operations.
- WE# (Write Enable): Controls data input during write operations.
- WP# (Write Protect): Protects against accidental programming/erasure.
- R/B# (Ready/Busy): Indicates the status of the device operations.
- VCC: Power supply input.
- VSS: Ground reference.
These pin functions are integral to managing data storage operations in NAND flash memory, allowing for reading, writing, and erasing processes necessary for device functionality.
Manufacturer
The MT29F4G08ABAEAH4:E is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. The company designs and manufactures a range of products, including DRAM, NAND flash, and NOR flash, which are used in a variety of applications such as computing, networking, and mobile devices. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and its contributions to advancing data storage capabilities worldwide.
Application
The MT29F4G08ABAEAH4:E is a NAND Flash memory chip commonly used in various electronic applications. Its primary application areas include consumer electronics like smartphones, tablets, and digital cameras; computing devices such as laptops and SSDs; industrial applications requiring reliable data storage; and embedded systems in IoT devices. Its non-volatile nature makes it suitable for data retention and storage solutions across these sectors.
Equivalent
The MT29F4G08ABAEAH4:E is a NAND Flash memory chip from Micron. Equivalent products may include NAND Flash chips with similar specifications from other manufacturers like:
1. Samsung K9F4G08U0D
2. Toshiba TC58NVG3S0H
3. Hynix H27U4G8F2CTR
These equivalents typically have similar storage capacity, interface, and form factor. However, always verify compatibility based on the specific requirements of your application.
1. Samsung K9F4G08U0D
2. Toshiba TC58NVG3S0H
3. Hynix H27U4G8F2CTR
These equivalents typically have similar storage capacity, interface, and form factor. However, always verify compatibility based on the specific requirements of your application.
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