MT29F2G08ABAEAWP-ITX:E

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MT29F2G08ABAEAWP-ITX:E

IC FLASH 2GBIT PARALLEL 48TSOP I

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規格

Part Status Obsolete
Base Product Number MT29F2G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

概述

Description

The MT29F2G08ABAEAWP-ITX:E is a NAND Flash memory chip manufactured by Micron Technology. It is part of the MT29 family, designed for a variety of storage applications. This memory chip has a capacity of 2 gigabytes (GB), utilizing NAND Flash technology, which is known for its high-density storage capabilities and cost-effectiveness. The "08" in its designation suggests an 8-bit interface, common in such memory devices for efficient data transfer.
This specific model is engineered for industrial use, as indicated by the "IT" in its part number, which stands for Industrial Temperature range. This means it can operate reliably in extreme temperatures, making it suitable for demanding environments.
The MT29F2G08ABAEAWP-ITX:E is typically used in applications requiring robust and reliable non-volatile storage, such as embedded systems, industrial machinery, and automotive electronics. It supports standard NAND Flash protocols and features, including error correction and wear leveling, to ensure data integrity and longer lifespan. Overall, it is a versatile and reliable memory solution for industrial applications.

Features

The MT29F2G08ABAEAWP-ITX:E is a NAND Flash memory device from Micron Technology. It features a storage capacity of 2Gb (Gigabit) and is designed to support a wide range of applications, from consumer electronics to industrial systems.
Key features include:
1. Architecture: It uses a 2-bit per cell (MLC) architecture, which balances performance and storage density.
2. Interface: The device utilizes an asynchronous I/O interface, making it compatible with a variety of controllers and systems.
3. Voltage Range: It operates at a voltage range of 2.7V to 3.6V, which is typical for NAND flash devices.
4. Performance: It offers reliable performance with an endurance of around 10,000 program/erase cycles.
5. Package: The device is available in a 48-pin TSOP (Thin Small Outline Package), ideal for space-constrained applications.
6. Temperature Range: It supports an industrial temperature range, making it suitable for use in harsh environmental conditions.
These features make the MT29F2G08ABAEAWP-ITX:E a versatile choice for storing and accessing data in a variety of electronic applications.

Package

The MT29F2G08ABAEAWP-ITX:E is a NAND Flash memory chip from Micron, featuring a 63-ball Ball Grid Array (BGA) package. This package type is designed for compact and high-density memory solutions, suitable for embedded applications.

Pinout

The MT29F2G08ABAEAWP-ITX:E is a NAND Flash memory chip manufactured by Micron. It features a total of 48 pins. This chip is part of the 2Gb NAND Flash family, offering non-volatile storage suitable for a variety of applications.
Key functions and pin descriptions include:
1. Data I/O (DQ0-DQ7): These pins are used for data input and output.
2. Command Latch Enable (CLE) and Address Latch Enable (ALE): These pins are used to latch commands and addresses, respectively.
3. Chip Enable (CE#): Activates the chip for operation when low.
4. Write Enable (WE#): Controls the writing to the device.
5. Read Enable (RE#): Controls the reading from the device.
6. Ready/Busy (R/B#): Indicates the status of the chip, whether it is busy or ready for the next operation.
7. Write Protect (WP#): Provides hardware protection against unwanted writes.
8. VCC and VSS: Power supply and ground pins.
The MT29F2G08ABAEAWP-ITX:E is used in applications requiring reliable, high-capacity data storage such as solid-state drives, mobile devices, and embedded systems.

Manufacturer

The MT29F2G08ABAEAWP-ITX:E is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company designs and produces a wide range of products, including DRAM, NAND flash, and NOR flash memory. These products are used in various applications, such as consumer electronics, mobile devices, data centers, and automotive systems. Micron's innovations and technologies support advanced computing solutions and contribute to the development of more efficient and high-performance products. The company is renowned for its contributions to the tech industry and its role in driving digital transformation through its cutting-edge memory and storage solutions.

Application

The MT29F2G08ABAEAWP-ITX:E is a 2Gb NAND flash memory chip, commonly used in various applications such as embedded systems, consumer electronics, industrial automation, and automotive systems. It is typically employed in devices requiring reliable data storage, like solid-state drives (SSDs), digital cameras, smartphones, tablets, and other portable devices. Its reliability and performance make it suitable for use in high-demand environments where data integrity and speed are critical.

Equivalent

The MT29F2G08ABAEAWP-ITX:E is a 2Gb NAND Flash memory chip from Micron. Equivalent products from other manufacturers include the K9F2G08U0F from Samsung, the TH58NVG2S3EBAI4 from Toshiba (now Kioxia), and the HY27UF082G2B from SK Hynix. These chips are similar in terms of NAND Flash technology, capacity, and interface, suitable for applications requiring non-volatile memory storage. Always verify compatibility with your specific application requirements.

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