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MT29F2G08ABAEAWP-AITX:E
IC FLASH 2GBIT PARALLEL 48TSOP I
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規格
| Part Status | Last Time Buy |
| Base Product Number | MT29F2G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
概述
Description
The MT29F2G08ABAEAWP-AITX:E is a NAND flash memory chip from Micron Technology, designed for high-performance storage solutions. It features a capacity of 2 gigabits (256 megabytes) and utilizes a page size of 2048 bytes for efficient data management. The device operates using a single 3.3V power supply, making it suitable for various applications, including smartphones, tablets, and other portable devices.
This NAND flash memory supports standard NAND interface protocols, facilitating easy integration into different systems. Its architecture enables fast read and write speeds, enhancing overall device performance. Additionally, the chip includes built-in error correction capabilities to ensure data integrity and reliability.
The MT29F2G08ABAEAWP-AITX:E is part of Micron's extensive product line, designed for a range of applications that require compact and durable storage solutions. Its features make it a popular choice for manufacturers looking to implement efficient and robust memory solutions in their electronic products.
This NAND flash memory supports standard NAND interface protocols, facilitating easy integration into different systems. Its architecture enables fast read and write speeds, enhancing overall device performance. Additionally, the chip includes built-in error correction capabilities to ensure data integrity and reliability.
The MT29F2G08ABAEAWP-AITX:E is part of Micron's extensive product line, designed for a range of applications that require compact and durable storage solutions. Its features make it a popular choice for manufacturers looking to implement efficient and robust memory solutions in their electronic products.
Features
The MT29F2G08ABAEAWP-AITX:E is a 2 Gb (gigabit) NAND flash memory device manufactured by Micron Technology. It features a toggle DDR interface, enabling high-speed data transfer rates. Key specifications include:
- Density: 2 Gb (256 MB)
- Organization: 2048 pages of 1 KB each, supporting page size operations.
- Endurance: Typically offers up to 3,000 program/erase cycles.
- Data Retention: Guaranteed data retention of 10 years at 25°C.
- Power Supply: Operates at a voltage range of 2.7V to 3.6V.
- Temperature Range: Supports commercial temperature ranges from 0°C to 70°C.
- Interface: Toggle NAND interface for improved performance.
- Applications: Suitable for mobile devices, consumer electronics, and embedded applications.
This device is designed for high reliability and efficient performance, making it ideal for applications requiring robust data storage solutions.
- Density: 2 Gb (256 MB)
- Organization: 2048 pages of 1 KB each, supporting page size operations.
- Endurance: Typically offers up to 3,000 program/erase cycles.
- Data Retention: Guaranteed data retention of 10 years at 25°C.
- Power Supply: Operates at a voltage range of 2.7V to 3.6V.
- Temperature Range: Supports commercial temperature ranges from 0°C to 70°C.
- Interface: Toggle NAND interface for improved performance.
- Applications: Suitable for mobile devices, consumer electronics, and embedded applications.
This device is designed for high reliability and efficient performance, making it ideal for applications requiring robust data storage solutions.
Package
The MT29F2G08ABAEAWP-AITX:E is a NAND flash memory device packaged in a TSOP (Thin Small Outline Package) format. This type of packaging is designed for surface mount applications, providing a compact solution for storage in various electronic devices.
Pinout
The MT29F2G08ABAEAWP-AITX:E is a NAND Flash memory device with a total of 48 pins. This device belongs to Micron's NAND Flash family and is typically used for storage applications in consumer electronics and embedded systems.
The pin functions include:
1. Data Pins (DQ0-DQ7): 8 data pins for input/output operations.
2. Command and Control Pins:
- CLE (Command Latch Enable): Used to latch commands.
- ALE (Address Latch Enable): Used to latch addresses.
- WE (Write Enable): Initiates write operations.
- RE (Read Enable): Initiates read operations.
3. Address Pins (A0-A22): Address lines used to select memory locations.
4. Chip Enable (CE): Activates the chip for read/write operations.
5. Write Protect (WP): Protects the data from being overwritten.
6. Ready/Busy (R/B): Indicates the device's status.
7. Power and Ground Pins: Supply voltage and ground connections.
This configuration facilitates efficient data storage and retrieval in various applications.
The pin functions include:
1. Data Pins (DQ0-DQ7): 8 data pins for input/output operations.
2. Command and Control Pins:
- CLE (Command Latch Enable): Used to latch commands.
- ALE (Address Latch Enable): Used to latch addresses.
- WE (Write Enable): Initiates write operations.
- RE (Read Enable): Initiates read operations.
3. Address Pins (A0-A22): Address lines used to select memory locations.
4. Chip Enable (CE): Activates the chip for read/write operations.
5. Write Protect (WP): Protects the data from being overwritten.
6. Ready/Busy (R/B): Indicates the device's status.
7. Power and Ground Pins: Supply voltage and ground connections.
This configuration facilitates efficient data storage and retrieval in various applications.
Manufacturer
The manufacturer of the MT29F2G08ABAEAWP-AITX:E is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a range of products, including DRAM, NAND flash memory, and other memory technologies used in various applications such as consumer electronics, computing, and mobile devices. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and plays a significant role in the development of advanced semiconductor solutions.
Application
The MT29F2G08ABAEAWP-AITX:E is a NAND flash memory device commonly used in applications such as smartphones, tablets, digital cameras, and embedded systems. Its features support data storage for operating systems, applications, and multimedia files, making it suitable for consumer electronics, automotive applications, and industrial equipment. Its reliability and performance make it ideal for high-density data storage solutions.
Equivalent
The MT29F2G08ABAEAWP-AITX:E chip is a 2Gb NAND Flash memory chip. Equivalent products include:
1. K9GAG08U0A (Samsung)
2. TC58NVG1S3H (Toshiba)
3. W29N02G (Winbond)
Ensure to check specific features such as package type, voltage, and interface compatibility for a precise match.
1. K9GAG08U0A (Samsung)
2. TC58NVG1S3H (Toshiba)
3. W29N02G (Winbond)
Ensure to check specific features such as package type, voltage, and interface compatibility for a precise match.
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