MT29F1G08ABBDAHC-IT:D

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MT29F1G08ABBDAHC-IT:D

IC FLASH 1GBIT PARALLEL 63VFBGA

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規格

Supplier Micron Technology Inc.
Package Bulk
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 1Gb (128M x 8)
MemoryInterface Parallel
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

概述

Description

MT29F1G08ABBDAHC-IT:D is a Micron NAND flash memory device. It is a 1‑Gbit (128 Mbyte) NAND with an 8‑bit data bus (x8) and an ONFI‑compatible interface. The -IT suffix indicates an Industrial temperature grade (typically -40°C to 85°C), suitable for embedded systems and harsh environments. The device is organized for page-based operations (commonly around 2 KB per page with a small spare area) and erase blocks (typically ~128 KB per block), requiring an external controller with ECC and wear leveling. It is intended for use as raw NAND in embedded storage or SSD sub-systems, not as a standalone drive. For exact electrical specs (voltage, timing), page/block sizes, endurance, and packaging details, consult the Micron MT29F1G08ABBDAHC-IT:D datasheet.

Features

MT29F1G08ABBDAHC-IT:D is Micron’s 1 Gbit (128 MB) NAND flash in a 48-pin TSOP II package with industrial temperature rating (-40°C to +85°C). Key features:
- Capacity: 1 Gbit (128 MB)
- Data width: x8 NAND flash
- Page/Spare: 2 KB data page with 64 B spare
- Block organization: 64 pages per block
- Multi-plane: two-plane/multi-plane operation for higher throughput
- Temperature: Industrial grade (-40°C to +85°C)
- Packaging: 48-pin TSOP II
- Endurance: typical ~100,000 program/erase cycles
- Data retention: ~10 years at 25°C
- Reliability features: bad-block management and wear leveling via host/controller
- Interface: standard NAND flash command set; ECC handled by host/controller
- Suitable for rugged embedded, industrial, and automotive applications
Note: exact timing parameters (read/write speeds, current, etc.) are specified in the datasheet.

Package

TSOP-48 (48-pin Thin Small Outline Package).

Pinout

Pin count: 48 pins (package variant for MT29F1G08ABBDAHC-IT:D).
Function: 1 Gbit, 8-bit parallel NAND Flash. Signals include:
- DQ0–DQ7: 8-bit bidirectional data I/O
- Address inputs: A0–Ax (row/column addresses, multiplexed via ALE)
- Control: CLE (command latch enable), ALE (address latch enable), WE# (write enable), RE# (read enable), CE# (chip enable), WP# (write protect)
- Status: R/B# (ready/busy)
- Power/ground: VCC, VCCQ (I/O supply), VSS (ground)
- Other: NC (not connected) pins as applicable
Note: Industrial temperature variant (-IT:D) indicates operation over an extended temperature range.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM and NAND flash); publicly traded (NASDAQ: MU) and one of the world’s leading memory manufacturers.

Application

Common applications for MT29F1G08ABBDAHC-IT:D (industrial-temp NAND) include:
- Non-volatile storage in embedded systems and consumer electronics
- USB drives and memory cards
- Boot/storage for SoCs and embedded controllers
- Solid-state drives for PCs/servers
- Automotive and industrial equipment requiring rugged, wide‑temperature operation (-40 to 85°C)

Equivalent

MT29F1G08ABBDAHC-IT:D is a 1 Gbit, ONFI, x8 NAND Flash (3V). Close equivalents (ONFI 1Gbit x8) include:
- Samsung K9F1G08U0M
- Macronix MX29F1G08ABMC (MX29F1G08AB)
- Hynix HY29F1G08MB
Note: exact package, timing, and revision differ; verify with Micron cross-reference/tools before replacement.

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