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MT29F1G08ABBDAH4-IT:D

Name: MT29F1G08ABBDAH4-IT:D
Rating: 4.7 (12 reviews)

IC FLASH 1GBIT PARALLEL 63VFBGA

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規格

Part Status	Obsolete
Base Product Number	MT29F1G08
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND
Memory Size	1Gbit
Memory Organization	128M x 8
Memory Interface	Parallel
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package	63-VFBGA
Supplier Device Package	63-VFBGA (9x11)
Packaging	Bulk

概述

Description

MT29F1G08ABBDAH4-IT:D? is Micron’s 1‑Gbit NAND flash memory with a parallel x8 data interface. It’s an industrial-temperature, MLC NAND device designed for non-volatile storage in embedded systems, automotive, and industrial equipment, as well as SSDs and memory cards. Key points:
- Density: 1 Gbit (256 MB in some configurations? Note: device-level density is 1 Gbit; organization yields usable capacity in blocks/pages per datasheet)
- Interface: ONFI-compatible parallel NAND, x8 data width
- Structure: page-based with a spare area; blocks composed of multiple pages
- Operations: standard NAND read/write (program), erase, and verify; supports multi‑plane operation for higher throughput
- Reliability: requires ECC; wear leveling considerations typical for MLC NAND
- Power/Temp: industrial temperature range (IT suffix indicates extended operating range)
For exact page size, block size, timing, electrical specs, and pinout, consult the MT29F1G08ABBDAH4-IT:D datasheet.

Features

Key features of MT29F1G08ABBDAH4-IT:D (Micron NAND Flash):
- 1 Gbit (128 MB) MLC NAND Flash
- x8 I/O interface; ONFi-compatible
- Power supply: 3.3V (typical); operating range ~2.7–3.6V
- Page size: 2 KB with ~64–128 B spare (OOB) per page
- Block erase; supports multi-plane/multi-die/interleaved operation
- Built-in bad-block management and wear leveling
- On-die ECC support (and compatibility with external ECC in controllers)
- Industrial temperature grade: -40°C to 85°C (IT)
- Data retention and endurance designed for NAND usage; P/E cycles in the low thousands range
- Packaging typical for Micron NAND (shop-ordered variant; reliability features included)
Note: exact OOB, block/page structure, and timing can vary by revision; consult the latest datasheet for precise specs.

Package

It uses a 48‑ball FBGA (Fine‑Pitch Ball Grid Array) package, industrial temperature grade (IT).

Pinout

- Pin count: 48 pins (NAND flash package, industrial temp option -IT:D).
- Function: Micron MT29F1G08ABBDAH4-IT:D is a 1 Gbit ONFI NAND flash with an 8-bit data bus. Key pins include DQ0–DQ7 (I/O data), A0–A17 (address inputs), ALE/CLE (address/command latches), WE#/RE# (write/read enables), CE# (chip enable), WP# (write protect), R/B# (ready/busy), VCC/VSS (power/ground), and VCCQ (I/O supply); NC for no-connect.

Manufacturer

- Manufacturer: Micron Technology, Inc. (Micron)
- What it is: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM and NAND Flash), and is one of the world’s largest memory chip makers (headquartered in Boise, Idaho).

Application

- Embedded systems and firmware/data storage
- Automotive and industrial electronics (wide temp range)
- Digital cameras and consumer electronics
- Solid-state drives and NAND-based storage subsystems
- USB drives, memory cards, portable storage
- Networking/edge devices requiring reliable non-volatile memory