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MT29F1G08ABAEAH4-ITX:E
IC FLASH 1GBIT PARALLEL 63VFBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT29F1G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Tray |
概述
Description
The MT29F1G08ABAEAH4-ITX:E is a NAND flash memory chip manufactured by Micron Technology. It features a storage capacity of 1 gigabit (Gbit) and is designed for applications requiring high-density memory solutions. The device operates on a 3V supply voltage and employs a synchronous interface to facilitate high-speed data transfers.
This NAND flash is commonly used in consumer electronics, mobile devices, and embedded systems due to its efficient performance and reliability. The "ITX" designation indicates its industrial-grade rating, making it suitable for harsh environments. Additionally, the "E" at the end signifies that it is compatible with environmentally friendly manufacturing processes.
Key features include robust error correction capabilities, low power consumption, and support for various programming and erase operations. The device is organized in a page format, enabling efficient data management and retrieval. Overall, the MT29F1G08ABAEAH4-ITX:E provides a versatile and reliable memory solution for a wide range of applications.
This NAND flash is commonly used in consumer electronics, mobile devices, and embedded systems due to its efficient performance and reliability. The "ITX" designation indicates its industrial-grade rating, making it suitable for harsh environments. Additionally, the "E" at the end signifies that it is compatible with environmentally friendly manufacturing processes.
Key features include robust error correction capabilities, low power consumption, and support for various programming and erase operations. The device is organized in a page format, enabling efficient data management and retrieval. Overall, the MT29F1G08ABAEAH4-ITX:E provides a versatile and reliable memory solution for a wide range of applications.
Features
The MT29F1G08ABAEAH4-ITX:E is a 1 Gb (Gigabit) NAND Flash memory chip from Micron Technology, designed for use in various applications including mobile devices, consumer electronics, and automotive systems. Key features include:
- Technology: NAND Flash, providing non-volatile storage.
- Density: 1 Gb capacity, suitable for data storage needs.
- Interface: Toggle DDR (Double Data Rate) interface, allowing for high-speed data transfer.
- Cell Type: SLC (Single-Level Cell) design, which offers high performance and endurance compared to MLC (Multi-Level Cell) NAND.
- Package: Available in a compact BGA (Ball Grid Array) package, facilitating space-efficient designs.
- Operating Voltage: Typically operates at 2.7V to 3.6V, ensuring compatibility with various systems.
- Endurance: High program/erase cycles, making it suitable for demanding applications.
Overall, the MT29F1G08ABAEAH4-ITX:E combines reliability, efficiency, and performance for modern storage solutions.
- Technology: NAND Flash, providing non-volatile storage.
- Density: 1 Gb capacity, suitable for data storage needs.
- Interface: Toggle DDR (Double Data Rate) interface, allowing for high-speed data transfer.
- Cell Type: SLC (Single-Level Cell) design, which offers high performance and endurance compared to MLC (Multi-Level Cell) NAND.
- Package: Available in a compact BGA (Ball Grid Array) package, facilitating space-efficient designs.
- Operating Voltage: Typically operates at 2.7V to 3.6V, ensuring compatibility with various systems.
- Endurance: High program/erase cycles, making it suitable for demanding applications.
Overall, the MT29F1G08ABAEAH4-ITX:E combines reliability, efficiency, and performance for modern storage solutions.
Package
The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory device packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This type of packaging provides a compact design suitable for high-density applications.
Pinout
The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory device from Micron Technology. It features a pin count of 48 pins.
The key functions of the pins include:
1. Data I/O Pins: These are used for data transfer (D0-D7).
2. Command Pins: Such as WE (Write Enable), RE (Read Enable), and CE (Chip Enable) to manage read and write operations.
3. Address Pins: Used for addressing memory locations during read and write operations.
4. Control Pins: Includes R/B (Ready/Busy), which signals the status of the device during operations.
5. Power Pins: For supply and ground connections (Vcc, Vss).
This device is typically used in applications requiring high-density storage, such as smartphones, tablets, and embedded systems.
The key functions of the pins include:
1. Data I/O Pins: These are used for data transfer (D0-D7).
2. Command Pins: Such as WE (Write Enable), RE (Read Enable), and CE (Chip Enable) to manage read and write operations.
3. Address Pins: Used for addressing memory locations during read and write operations.
4. Control Pins: Includes R/B (Ready/Busy), which signals the status of the device during operations.
5. Power Pins: For supply and ground connections (Vcc, Vss).
This device is typically used in applications requiring high-density storage, such as smartphones, tablets, and embedded systems.
Manufacturer
The manufacturer of the MT29F1G08ABAEAH4-ITX:E is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. The company is known for its development of DRAM, NAND flash memory, and other advanced memory technologies used in a wide range of electronic devices, from smartphones and computers to data centers and automotive applications. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovation and commitment to quality in the semiconductor field.
Application
The MT29F1G08ABAEAH4-ITX:E is a NAND Flash memory device commonly used in applications such as mobile phones, tablets, solid-state drives (SSDs), automotive systems, industrial automation, and consumer electronics. Its high-density storage capabilities make it suitable for data storage in applications requiring fast access and reliability.
Equivalent
The MT29F1G08ABAEAH4-ITX:E is a 1Gb NAND Flash memory chip by Micron Technology. Equivalent products include:
1. Samsung K9GAG08U0M - 1Gb NAND Flash
2. Toshiba TH58NVG1S3F - 1Gb NAND Flash
3. SK Hynix H27UCG8T2A - 1Gb NAND Flash
Ensure to verify the specifications and compatibility for your specific application.
1. Samsung K9GAG08U0M - 1Gb NAND Flash
2. Toshiba TH58NVG1S3F - 1Gb NAND Flash
3. SK Hynix H27UCG8T2A - 1Gb NAND Flash
Ensure to verify the specifications and compatibility for your specific application.
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