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MT29F128G08CEAAAC5:A
IC FLASH 128GBIT PARALLEL 52VLGA
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- 製造商。 部分 #MT29F128G08CEAAAC5:A
- 包 52-VLGA
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規格
| Supplier | Micron Technology Inc. |
| Package | Bulk |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 128Gb (16G x 8) |
| MemoryInterface | Parallel |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 52-VLGA |
概述
Description
MT29F128G08CEAAAC5:A is Micron’s MT29F128G08 NAND Flash memory. It’s a 128 Gbit (16 GB) non-volatile storage device with a 8-bit (x8) data bus, designed for embedded storage in devices such as SSDs, USB drives, cameras, and other consumer/industrial electronics.
Key points:
- Capacity and organization: 128 Gbit total; typically organized into pages (e.g., ~2 KB per page) and 64 KB (or similar) erase blocks; uses a planar MLC NAND architecture.
- Interface: ONFi-compatible NAND interface with multi-plane operation to boost throughput.
- Data path: x8 I/O (8-bit data bus).
- Usage: Requires external controller with ECC and wear leveling; intended for high-density, non-volatile storage applications.
- Variants: The A suffix indicates a specific packaging/temperature variant; exact electrical and mechanical specs vary by lot.
For exact timings, endurance (P/E cycles), voltage ranges, page/block sizes, and package options, consult the MT29F128G08CEAAAC5:A datasheet.
Key points:
- Capacity and organization: 128 Gbit total; typically organized into pages (e.g., ~2 KB per page) and 64 KB (or similar) erase blocks; uses a planar MLC NAND architecture.
- Interface: ONFi-compatible NAND interface with multi-plane operation to boost throughput.
- Data path: x8 I/O (8-bit data bus).
- Usage: Requires external controller with ECC and wear leveling; intended for high-density, non-volatile storage applications.
- Variants: The A suffix indicates a specific packaging/temperature variant; exact electrical and mechanical specs vary by lot.
For exact timings, endurance (P/E cycles), voltage ranges, page/block sizes, and package options, consult the MT29F128G08CEAAAC5:A datasheet.
Features
Here are the typical features for MT29F128G08CEAAAC5:A:
- Capacity/type: 128 Gbit (16 GB) MLC NAND flash
- Interface: ONFI-compatible x8 data bus
- Page/ spare: 2 KB page size with 64 B spare area
- Architecture: Multi-plane (high parallelism; commonly 4 planes)
- Voltage: 3.3 V nominal Vcc for I/O/core (consult datasheet for exact I/O voltage options)
- Operating range: Industrial-grade temperature support (approximately -40°C to 85°C)
- Endurance/reliability: Designed for typical NAND endurance (P/E cycles in the thousands; ECC handled by host/controller)
- Packaging/usage: Suitable for embedded/SSD-style storage with standard NAND features (bad block management, wear leveling via controller)
Note: For exact timing, voltage rails, ECC requirements, and packaging details, please consult the official datasheet.
- Capacity/type: 128 Gbit (16 GB) MLC NAND flash
- Interface: ONFI-compatible x8 data bus
- Page/ spare: 2 KB page size with 64 B spare area
- Architecture: Multi-plane (high parallelism; commonly 4 planes)
- Voltage: 3.3 V nominal Vcc for I/O/core (consult datasheet for exact I/O voltage options)
- Operating range: Industrial-grade temperature support (approximately -40°C to 85°C)
- Endurance/reliability: Designed for typical NAND endurance (P/E cycles in the thousands; ECC handled by host/controller)
- Packaging/usage: Suitable for embedded/SSD-style storage with standard NAND features (bad block management, wear leveling via controller)
Note: For exact timing, voltage rails, ECC requirements, and packaging details, please consult the official datasheet.
Package
TSOP-48 (48-pin Thin Small Outline Package) NAND Flash.
Pinout
- Pin count: 176 pins (FBGA-176 package)
- Function: 128 Gbit NAND Flash memory (x8 data bus) with standard NAND interface (DQ0–DQ7 data I/O; CLE, ALE, CE#, WE#, RE#, WP#, R/B#; power pins Vcc/Vccq and GND).
- Function: 128 Gbit NAND Flash memory (x8 data bus) with standard NAND interface (DQ0–DQ7 data I/O; CLE, ALE, CE#, WE#, RE#, WP#, R/B#; power pins Vcc/Vccq and GND).
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM and NAND flash).
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM and NAND flash).
Application
Application areas:
- Solid-state drives (SSDs)
- USB flash drives and SD/memory cards
- Embedded storage in mobile devices and consumer electronics
- Automotive and industrial electronics requiring high-density, reliable NAND memory
- Solid-state drives (SSDs)
- USB flash drives and SD/memory cards
- Embedded storage in mobile devices and consumer electronics
- Automotive and industrial electronics requiring high-density, reliable NAND memory
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