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MT29C4G48MAAGBBAKS-48 IT
Multichip Packages MASSFLASH/MOBILE DDR 6G
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規格
| Packaging | Tray |
| Standard Pack Qty | 1140 |
概述
Description
The MT29C4G48MAAGBBAKS-48 IT is a mobile DRAM (Dynamic Random-Access Memory) product manufactured by Micron Technology. It offers a 4GB capacity and is designed to operate in mobile devices due to its low power consumption and high performance. This memory chip utilizes a 48-ball fine-pitch ball grid array (FBGA) package, making it suitable for space-constrained applications such as smartphones and tablets.
Key features include support for DDR3 (Double Data Rate 3) technology, allowing for faster data transfer rates, and a low voltage operation that enhances battery life in mobile applications. The "IT" designation indicates that it is part of the industrial temperature range series, meaning it can operate effectively in a wider range of temperatures, which is crucial for devices exposed to varying environmental conditions. Overall, the MT29C4G48MAAGBBAKS-48 IT is ideal for modern mobile systems requiring efficient and reliable memory solutions.
Key features include support for DDR3 (Double Data Rate 3) technology, allowing for faster data transfer rates, and a low voltage operation that enhances battery life in mobile applications. The "IT" designation indicates that it is part of the industrial temperature range series, meaning it can operate effectively in a wider range of temperatures, which is crucial for devices exposed to varying environmental conditions. Overall, the MT29C4G48MAAGBBAKS-48 IT is ideal for modern mobile systems requiring efficient and reliable memory solutions.
Features
The MT29C4G48MAAGBBAKS-48 is a 4 Gb (gigabit) DDR3 SDRAM memory chip manufactured by Micron Technology. Key features include:
1. Type: DDR3 SDRAM, which provides higher data transfer rates compared to DDR2.
2. Capacity: 4 Gb, suitable for applications requiring moderate memory density.
3. Data Rate: Typically operates at 1600 MT/s (mega-transfers per second).
4. Organization: It has a 8-bit wide I/O interface, allowing for efficient data handling.
5. Packaging: Available in a 78-ball BGA (Ball Grid Array) package, facilitating high-density mounting on PCBs.
6. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
7. Features: Supports various advanced features such as self-refresh, burst mode, and on-die termination.
This memory chip is primarily used in mobile devices, laptops, and other electronics requiring compact and efficient memory solutions.
1. Type: DDR3 SDRAM, which provides higher data transfer rates compared to DDR2.
2. Capacity: 4 Gb, suitable for applications requiring moderate memory density.
3. Data Rate: Typically operates at 1600 MT/s (mega-transfers per second).
4. Organization: It has a 8-bit wide I/O interface, allowing for efficient data handling.
5. Packaging: Available in a 78-ball BGA (Ball Grid Array) package, facilitating high-density mounting on PCBs.
6. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
7. Features: Supports various advanced features such as self-refresh, burst mode, and on-die termination.
This memory chip is primarily used in mobile devices, laptops, and other electronics requiring compact and efficient memory solutions.
Package
The MT29C4G48MAAGBBAKS-48 IT is a DRAM memory chip packaged in a 48-ball FBGA (Fine Ball Grid Array) configuration. This package type allows for a compact design and efficient heat dissipation, suitable for high-density applications.
Pinout
The MT29C4G48MAAGBBAKS-48 IT is a 4 Gb (Gigabit) DDR3 SDRAM memory chip manufactured by Micron Technology. It features a 48-pin TSOP II (Thin Small Outline Package) configuration.
Pin count: 48 pins.
Functions:
- The pins provide various functionalities including data input/output, addressing, control signals, and power supply connections.
- Key pins include:
- Data Pins (DQ): Used for data transfer.
- Address Pins (A): Used for selecting memory locations.
- Control Pins (CK, CK#, CS#, RAS#, CAS#, WE#): Manage the read/write operations and timing.
- Power Pins (VDD, VSS): Provide power to the chip.
This memory is designed for high-performance applications, supporting features like burst access and low power consumption, suitable for mobile devices and other computing applications.
Pin count: 48 pins.
Functions:
- The pins provide various functionalities including data input/output, addressing, control signals, and power supply connections.
- Key pins include:
- Data Pins (DQ): Used for data transfer.
- Address Pins (A): Used for selecting memory locations.
- Control Pins (CK, CK#, CS#, RAS#, CAS#, WE#): Manage the read/write operations and timing.
- Power Pins (VDD, VSS): Provide power to the chip.
This memory is designed for high-performance applications, supporting features like burst access and low power consumption, suitable for mobile devices and other computing applications.
Manufacturer
The manufacturer of the MT29C4G48MAAGBBAKS-48 IT is Micron Technology, Inc. Micron is a leading American producer of semiconductor devices, primarily known for its memory and storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, such as computing, consumer electronics, automotive, and industrial applications. The company is recognized for its innovation in memory technology and plays a significant role in the global semiconductor industry. Micron focuses on advanced manufacturing processes and materials science to develop high-performance, reliable memory solutions.
Application
The MT29C4G48MAAGBBAKS-48 IT is a mobile DRAM memory chip commonly used in applications such as smartphones, tablets, laptops, and other portable devices. It supports high-performance computing, graphics processing, and multitasking capabilities, making it ideal for consumer electronics, automotive systems, and embedded applications. Its low power consumption also suits applications requiring energy efficiency.
Equivalent
The MT29C4G48MAAGBBAKS-48 IT is a 4 Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G63AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA-125
4. Nanya NT4GC64B4HB-18
Ensure compatibility with your specific application requirements before selecting an equivalent.
1. Hynix H5TQ4G63AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA-125
4. Nanya NT4GC64B4HB-18
Ensure compatibility with your specific application requirements before selecting an equivalent.
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