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MT28EW512ABA1HPC-0AAT
IC FLASH 512MBIT PARALLEL 64LBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT28EW512 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8, 32M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-LBGA (11x13) |
| Packaging | Tray |
| Access Time | 105 ns |
| Grade | Automotive |
| Qualification | AEC-Q100 |
概述
Description
The MT28EW512ABA1HPC-0AAT is a high-performance, high-density, non-volatile memory solution designed by Micron Technology. It is part of the NOR Flash memory family, which is typically used in applications requiring fast read speeds and reliable data storage, such as embedded systems and industrial applications. This specific model provides 512 megabits of memory space.
Key features of the MT28EW512ABA1HPC-0AAT include fast random read performance, low power consumption, and enhanced security features. The device supports both asynchronous and synchronous read operations, offering flexibility in various application environments. It is built to operate across a wide temperature range, making it suitable for use in harsh conditions.
The memory is organized in a way that allows for efficient data management, and its design ensures high endurance and data retention capabilities. The MT28EW512ABA1HPC-0AAT is often chosen for its reliability and efficiency in delivering high-speed data processing and storage solutions in critical applications.
Key features of the MT28EW512ABA1HPC-0AAT include fast random read performance, low power consumption, and enhanced security features. The device supports both asynchronous and synchronous read operations, offering flexibility in various application environments. It is built to operate across a wide temperature range, making it suitable for use in harsh conditions.
The memory is organized in a way that allows for efficient data management, and its design ensures high endurance and data retention capabilities. The MT28EW512ABA1HPC-0AAT is often chosen for its reliability and efficiency in delivering high-speed data processing and storage solutions in critical applications.
Features
The MT28EW512ABA1HPC-0AAT is a NAND Flash memory chip designed by Micron Technology. It features a storage capacity of 512 megabits. This chip is part of the NOR Flash family, known for its high-speed read and execute-in-place functionality. It operates with a single power supply voltage range, enhancing compatibility and integration into various systems.
Key features of the MT28EW512ABA1HPC-0AAT include:
1. High Performance: It offers rapid read speeds, which are essential for applications requiring quick data access and execution.
2. Extended Temperature Range: Suitable for industrial applications, it can function efficiently under a wide temperature range.
3. Security Features: Includes built-in hardware protection to prevent unauthorized data access and modifications.
4. Compatibility: The chip is designed to be easily integrated with a variety of microcontrollers and processors.
5. Low Power Consumption: Optimized for energy-efficient operation, making it suitable for battery-powered devices.
These features make the MT28EW512ABA1HPC-0AAT ideal for embedded systems, automotive applications, and other high-reliability environments requiring robust, non-volatile memory solutions.
Key features of the MT28EW512ABA1HPC-0AAT include:
1. High Performance: It offers rapid read speeds, which are essential for applications requiring quick data access and execution.
2. Extended Temperature Range: Suitable for industrial applications, it can function efficiently under a wide temperature range.
3. Security Features: Includes built-in hardware protection to prevent unauthorized data access and modifications.
4. Compatibility: The chip is designed to be easily integrated with a variety of microcontrollers and processors.
5. Low Power Consumption: Optimized for energy-efficient operation, making it suitable for battery-powered devices.
These features make the MT28EW512ABA1HPC-0AAT ideal for embedded systems, automotive applications, and other high-reliability environments requiring robust, non-volatile memory solutions.
Package
The MT28EW512ABA1HPC-0AAT is a type of NOR Flash memory packaged in a 56-lead TSOP (Thin Small Outline Package).
Pinout
The MT28EW512ABA1HPC-0AAT is a NOR Flash memory device manufactured by Micron Technology. It typically comes in a 56-pin TSOP (Thin Small Outline Package) form factor. The pin functions generally include:
1. Address Pins: These are used to specify the memory address location for read/write operations.
2. Data Pins: These bidirectional pins are used to transfer data to and from the memory.
3. Chip Enable (CE#): Activates the chip for operation.
4. Output Enable (OE#): Enables the data output buffers during read operations.
5. Write Enable (WE#): Controls the writing operations to the memory.
6. Reset (RESET#): Resets the device and initializes the memory.
7. Write Protect (WP#): Protects certain memory regions from being written to.
8. Ready/Busy (RY/BY#): Indicates the status of the device, whether it is busy with an operation or ready for the next command.
9. VCC, VSS: Power supply and ground pins.
These functions allow the MT28EW512ABA1HPC-0AAT to perform efficient read, write, and erase operations typical of flash memory devices. Always refer to the official datasheet for precise details.
1. Address Pins: These are used to specify the memory address location for read/write operations.
2. Data Pins: These bidirectional pins are used to transfer data to and from the memory.
3. Chip Enable (CE#): Activates the chip for operation.
4. Output Enable (OE#): Enables the data output buffers during read operations.
5. Write Enable (WE#): Controls the writing operations to the memory.
6. Reset (RESET#): Resets the device and initializes the memory.
7. Write Protect (WP#): Protects certain memory regions from being written to.
8. Ready/Busy (RY/BY#): Indicates the status of the device, whether it is busy with an operation or ready for the next command.
9. VCC, VSS: Power supply and ground pins.
These functions allow the MT28EW512ABA1HPC-0AAT to perform efficient read, write, and erase operations typical of flash memory devices. Always refer to the official datasheet for precise details.
Manufacturer
The MT28EW512ABA1HPC-0AAT is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. They produce a variety of products, including DRAM, NAND flash memory, NOR flash memory, and other memory technologies used in computing devices, consumer electronics, automotive industries, and more. Micron is recognized for its innovation in the semiconductor space and is one of the leading memory manufacturers globally.
Application
The MT28EW512ABA1HPC-0AAT is a 512Mb NOR Flash memory chip commonly used in applications requiring reliable and fast read speeds. Typical application areas include embedded systems, automotive electronics, industrial equipment, consumer electronics, and networking devices. It is ideal for systems that require high-density storage with fast boot capabilities, firmware storage, and code shadowing.
Equivalent
The MT28EW512ABA1HPC-0AAT chip is a NAND flash memory product. Equivalent products would include those from other major flash memory manufacturers with similar specifications, such as:
1. Samsung K9F4G08U0D (or similar within their NAND flash line)
2. Toshiba TC58TEG5DCLTA00
3. Hynix H27U4G8F2CTR-BC
4. Intel PC29F4G08ABAD
Ensure compatibility by checking detailed specifications such as storage capacity, interface, voltage, and package type.
1. Samsung K9F4G08U0D (or similar within their NAND flash line)
2. Toshiba TC58TEG5DCLTA00
3. Hynix H27U4G8F2CTR-BC
4. Intel PC29F4G08ABAD
Ensure compatibility by checking detailed specifications such as storage capacity, interface, voltage, and package type.
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