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MT28EW128ABA1HJS-0SIT
IC FLASH 128MBIT PARALLEL 56TSOP
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規格
| Part Status | Active |
| Base Product Number | MT28EW128 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8, 8M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 95 ns |
概述
Description
The MT28EW128ABA1HJS-0SIT is a memory device from Micron Technology, specifically part of the NAND Flash memory family. This device features a storage capacity of 128 megabits and is designed for high-performance applications in embedded systems, consumer electronics, and mobile devices. It utilizes a serial interface, which allows for efficient data transfer rates and low power consumption, making it suitable for battery-operated devices. The "H" in its designation indicates a high-density configuration, while "JS" signifies the specific packaging and temperature range. The device is often used in applications requiring data storage, such as firmware updates, configuration data, and other non-volatile memory needs. With a focus on reliability and speed, the MT28EW128ABA1HJS-0SIT is engineered for durability and consistent performance in various operating conditions.
Features
The MT28EW128ABA1HJS-0SIT is a NAND Flash memory device from Micron Technology. It features a 128Mb (16MB) capacity, utilizing the NAND Flash technology for high-density storage solutions. Key features include:
1. Interface: It supports a parallel interface, allowing easy integration with various microcontrollers and systems.
2. Read/Write Endurance: It offers a high endurance with a significant number of program/erase cycles, typically around 10,000 cycles.
3. Data Retention: Designed for long data retention, typically around 10 years at 55°C.
4. Low Power Consumption: Optimized for low power operation, making it suitable for battery-operated devices.
5. Page and Block Structure: Utilizes a page-based architecture for efficient data management and retrieval.
6. Temperature Range: Available for various industrial temperature ranges, ensuring reliability in diverse environments.
This component is ideal for applications in consumer electronics, automotive, and industrial systems, where compact and reliable storage solutions are essential.
1. Interface: It supports a parallel interface, allowing easy integration with various microcontrollers and systems.
2. Read/Write Endurance: It offers a high endurance with a significant number of program/erase cycles, typically around 10,000 cycles.
3. Data Retention: Designed for long data retention, typically around 10 years at 55°C.
4. Low Power Consumption: Optimized for low power operation, making it suitable for battery-operated devices.
5. Page and Block Structure: Utilizes a page-based architecture for efficient data management and retrieval.
6. Temperature Range: Available for various industrial temperature ranges, ensuring reliability in diverse environments.
This component is ideal for applications in consumer electronics, automotive, and industrial systems, where compact and reliable storage solutions are essential.
Package
The MT28EW128ABA1HJS-0SIT is packaged in a TSOP (Thin Small Outline Package) format, specifically designed for memory applications. This package type facilitates efficient space utilization and heat dissipation on circuit boards.
Pinout
The MT28EW128ABA1HJS-0SIT is a 128 Megabit (16 Megabyte) NAND Flash memory device, featuring a total pin count of 48. This device is organized in a way that supports various functions including data storage, random access, and block-level erasure.
The key functions of its pins include:
- Data Pins (DQ0-DQ7): Used for data input and output.
- Address Pins (A0-A16): Used to access specific memory locations.
- Control Pins: These include CS (Chip Select), CLE (Command Latch Enable), ALE (Address Latch Enable), RE (Read Enable), WE (Write Enable), and R/B (Ready/Busy) which are essential for controlling read/write operations.
- Power Pins: Vcc and Vss for power supply.
The device operates using the NAND Flash architecture, allowing for high-density data storage and efficient data management.
The key functions of its pins include:
- Data Pins (DQ0-DQ7): Used for data input and output.
- Address Pins (A0-A16): Used to access specific memory locations.
- Control Pins: These include CS (Chip Select), CLE (Command Latch Enable), ALE (Address Latch Enable), RE (Read Enable), WE (Write Enable), and R/B (Ready/Busy) which are essential for controlling read/write operations.
- Power Pins: Vcc and Vss for power supply.
The device operates using the NAND Flash architecture, allowing for high-density data storage and efficient data management.
Manufacturer
The MT28EW128ABA1HJS-0SIT is manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and based in Boise, Idaho, Micron designs and produces a wide range of semiconductor products that are used in various applications, from consumer electronics to enterprise data centers. The company plays a crucial role in the memory and storage industry, focusing on innovation and the development of advanced memory technologies.
Application
The MT28EW128ABA1HJS-0SIT is a NAND Flash memory device commonly used in applications such as mobile devices, consumer electronics, automotive systems, and industrial equipment. It supports data storage for embedded systems, firmware updates, multimedia content, and file storage in IoT devices. Its high density and reliability make it suitable for applications requiring efficient data retention and quick access times.
Equivalent
The MT28EW128ABA1HJS-0SIT chip is a 128Mb (16MB) NAND Flash memory device primarily used in embedded applications. Equivalent products include the Micron MT29F2G08ABAEAWP, Samsung K9GAG08U0M, and Hynix H27UCG8T2BTR. Always verify compatibility in terms of voltage, pinout, and performance specifications before substitution.
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