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MRFX1K80HR5
RF MOSFET LDMOS 65V NI-1230H-4S
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- 製造商。 部分 #MRFX1K80HR5
- 包 SOT1787-1
- 資料表 MRFX1K80HR5 DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | LDMOS (Dual) |
| Frequency | 1.8MHz ~ 470MHz |
| Gain | 24dB |
| Voltage-Test | 65 V |
| CurrentRating(Amps) | 10µA |
| Current-Test | 200 mA |
| Power-Output | 1800W |
| Voltage-Rated | 182 V |
| Package/Case | SOT-979A |
概述
Description
The MRFX1K80HR5 is a high-performance RF (Radio Frequency) power transistor designed for use in various applications, including industrial and commercial RF amplification. It is part of the MRFX series, known for its efficiency and reliability in delivering high power levels. This device typically operates in the UHF frequency range and is favored for its ability to handle significant output power, making it suitable for applications such as broadcast transmitters, radar systems, and telecommunications.
Key features of the MRFX1K80HR5 include its robust construction, thermal stability, and enhanced performance characteristics, which result in lower distortion and improved signal integrity. The transistor is typically available in a metal package for better heat dissipation and is designed to operate under harsh conditions. Its high gain and efficiency make it an excellent choice for RF amplification in demanding environments, ensuring optimal performance and longevity.
Overall, the MRFX1K80HR5 is an essential component for engineers looking to design reliable RF power systems.
Key features of the MRFX1K80HR5 include its robust construction, thermal stability, and enhanced performance characteristics, which result in lower distortion and improved signal integrity. The transistor is typically available in a metal package for better heat dissipation and is designed to operate under harsh conditions. Its high gain and efficiency make it an excellent choice for RF amplification in demanding environments, ensuring optimal performance and longevity.
Overall, the MRFX1K80HR5 is an essential component for engineers looking to design reliable RF power systems.
Features
The MRFX1K80HR5 is a high-performance RF power transistor designed for use in various RF applications, particularly in the 1.8 to 200 MHz frequency range. Key features include:
1. Power Output: Capable of delivering up to 1 kW of output power, making it suitable for high-power RF amplifiers.
2. High Gain: Offers significant gain, enhancing efficiency and performance in amplification tasks.
3. Durability: Designed for robustness, it can withstand harsh operating conditions, ensuring longevity in demanding applications.
4. Package Type: Available in a metal package, which aids in effective heat dissipation and thermal management.
5. Efficiency: Engineered for high efficiency, minimizing power loss during operation.
6. Applications: Commonly used in industrial, scientific, and medical (ISM) applications, as well as in RF and microwave communications.
Overall, the MRFX1K80HR5 is well-suited for applications requiring reliable high-frequency performance and significant power output.
1. Power Output: Capable of delivering up to 1 kW of output power, making it suitable for high-power RF amplifiers.
2. High Gain: Offers significant gain, enhancing efficiency and performance in amplification tasks.
3. Durability: Designed for robustness, it can withstand harsh operating conditions, ensuring longevity in demanding applications.
4. Package Type: Available in a metal package, which aids in effective heat dissipation and thermal management.
5. Efficiency: Engineered for high efficiency, minimizing power loss during operation.
6. Applications: Commonly used in industrial, scientific, and medical (ISM) applications, as well as in RF and microwave communications.
Overall, the MRFX1K80HR5 is well-suited for applications requiring reliable high-frequency performance and significant power output.
Package
The MRFX1K80HR5 is packaged in a metal can, specifically a "TO-3P" package type. This package is designed for high-power applications, providing efficient heat dissipation and robust performance.
Pinout
The MRFX1K80HR5 is a high-power RF MOSFET transistor designed for use in RF applications. It features a total of 8 pins. The primary functions of these pins include:
1. Gate (G): Controls the switching of the transistor.
2. Drain (D): The output terminal where the RF signal is delivered.
3. Source (S): The reference terminal for the gate voltage, completing the circuit.
The device is often used in RF amplification, such as in communication systems and transmitters. It is known for its high efficiency and capability to handle high power levels, making it suitable for various RF applications. For detailed specifications, it is advisable to refer to the manufacturer's datasheet.
1. Gate (G): Controls the switching of the transistor.
2. Drain (D): The output terminal where the RF signal is delivered.
3. Source (S): The reference terminal for the gate voltage, completing the circuit.
The device is often used in RF amplification, such as in communication systems and transmitters. It is known for its high efficiency and capability to handle high power levels, making it suitable for various RF applications. For detailed specifications, it is advisable to refer to the manufacturer's datasheet.
Manufacturer
The MRFX1K80HR5 is manufactured by Mitsubishi Electric Corporation. Mitsubishi Electric is a multinational company based in Japan, known for its diverse range of products and services, including electronics, electrical equipment, and automation systems. The company operates in various sectors, including industrial automation, energy, transportation, and telecommunications. Established in 1921, Mitsubishi Electric has a strong focus on innovation and technology, contributing to advancements in various industries. Its semiconductor division produces high-power RF transistors and other related components, serving applications in telecommunications, broadcasting, and industrial sectors.
Application
The MRFX1K80HR5 is a high-power RF transistor primarily used in RF amplification applications. Its key application areas include radar systems, industrial heating, RF communication systems, and broadcasting. It is suited for high-frequency and high-efficiency operations, making it ideal for both civilian and military applications in wireless transmission and signal processing.
Equivalent
The MRFX1K80HR5 is a high-power RF transistor often used in RF amplification applications. Equivalent products include the MRFX1K80HR5 from different manufacturers or parts like the BTA20-800V, MRF1K50, and others from various brands like NXP and Infineon. Always verify specifications such as power, frequency range, and packaging before substituting.
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