MRF8S18120HSR3

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MRF8S18120HSR3

FET RF 65V 1.81GHZ NI-780S

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規格

Supplier NXP USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
TransistorType LDMOS
Frequency 1.81GHz
Gain 18.2dB
Voltage-Test 28 V
Current-Test 800 mA
Power-Output 72W
Voltage-Rated 65 V
Package/Case NI-780S

概述

Description

MRF8S18120HSR3 appears to be a part from the MRF RF-transistor family (Motorola/ON Semiconductor lineage). These devices are high-frequency RF transistors used as power amplifiers or driver stages in wireless transmitters, receivers, and RF front-ends. The exact electrical data (Vds, Id, Pout, gain, fT/fmax, biasing, package type) depends on the specific datasheet for this variant.
What to know about it (typical for MRF parts):
- Type: RF power transistor/MESFET or GaAs/GaN FET used for amplification
- Frequency range: RF to microwave region (depends on the exact part)
- Output/power: CW and pulsed power ratings, efficiency
- Biasing: gate/base and drain/collector bias requirements
- Packaging: SMD or bare-die variants; RoHS/compliance suffixes vary (e.g., HSR3)
- Key specs: gain, input/output return loss (S11/S22), stable operation, thermal/power handling
Since I can’t locate a public datasheet for this exact suffix, please share the manufacturer or a link and I’ll give a precise summary.

Package

Package type: SR3 — a ceramic surface-mount RF package (3-lead with a heat slug/flange style). For exact dimensions, consult the device datasheet.

Pinout

Pin count: 8 pins.
Function: RF MMIC amplifier module (MRF family). It provides RF input and output pins with bias/enable pins and multiple ground pins, intended for RF/microwave amplification. Exact pinout and biasing requirements vary by revision; please consult the datasheet for the MRF8S18120HSR3 for precise pin assignments and operating conditions.

Manufacturer

Manufacturer: Mitsubishi Electric Corporation. It is a Japanese multinational electronics and electrical equipment company, part of the Mitsubishi Group, that designs and manufactures semiconductors, RF devices, and a wide range of electronic components and systems.

Application

MRF8S18120HSR3 is a microwave RF power transistor used in RF front‑ends. Common applications include:
- Wireless infrastructure RF amplifiers (base stations, small cells)
- Satellite/space communication transceivers
- Radar and automotive radar systems
- RF switching and impedance networks in front‑end modules
- Test equipment (signal generators, up/down converters)
- 2G/3G/4G/5G front‑end modules and related IoT gateways
Note: verify exact frequency band and package in the datasheet.

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