圖片僅供參考

MRF8P20140WHSR3

Name: MRF8P20140WHSR3
Rating: 4.7 (12 reviews)

FET RF 2CH 65V 1.91GHZ NI780S-4

製造商
製造商。部分 #MRF8P20140WHSR3
包 NI-780S-4L
資料表
有現貨的7330

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	NXP USA Inc.
Package	Tape & Reel (TR)
ProductStatus	Obsolete
TransistorType	LDMOS (Dual)
Frequency	1.88GHz ~ 1.91GHz
Gain	16dB
Voltage-Test	28 V
Current-Test	500 mA
Power-Output	24W
Voltage-Rated	65 V
Package/Case	NI-780S-4L

概述

Description

MRF8P20140WHSR3 is a high‑power RF/microwave device in the MRF family (Motorola/ON Semiconductor lineage). The MRF prefix signals a RF power transistor or MOSFET, while WHSR3 denotes a specific surface‑mount package/thermal‑pad style used by the supplier. Typical roles include RF amplifiers, switching regulators, and transmitter/receiver front‑ends requiring substantial current and/or high frequency performance.
What to look for in the datasheet:
- Electricals: VDS, ID, PD(max), Rds(on) (if MOSFET), Ft or gain, operating frequency range.
- Package: WHSR3 footprint, thermal resistance, mounting/heat-sinking requirements.
- Limits: safe operating area, biasing, ESD, and derating curves.
If you have the official datasheet or your target specs (voltage, current, frequency range, power), I can tailor a precise introduction and usage guidance.

Package

The MRF8P20140WHSR3 uses the WHS package—a surface-mount power MOSFET package (D2PAK/TO-263 style) with three leads and a drain tab.

Pinout

Pin count: 8 pins.
Function: RF MMIC power amplifier (2.0–14.0 GHz) in an 8-pin package. Pins provide RF input and RF output, supply/bias (Vdd and bias/gate), and ground; remaining pins are typically no-connect or substrate per the datasheet. For exact pinout, refer to the datasheet.

Manufacturer

- Manufacturer: ON Semiconductor (originating from Motorola’s Semiconductor Products Sector).
- Company type: A global semiconductor company that designs and manufactures analog, discrete, power, and mixed-signal ICs for automotive, industrial, communications, and consumer markets.

Application

MRF8P20140WHSR3 is a high‑power RF LDMOS transistor. Typical applications include:
- Wireless infrastructure RF power amplifiers (base stations, macro/pico cells)
- Radar systems (military and civilian)
- Satellite communications uplink/downlink PA stages
- Broadcast and other RF transmitters
- Industrial, scientific and medical (ISM) RF systems and plasma generators
- Test and measurement equipment (RF lab amplifiers)