MMUN2113LT1G

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MMUN2113LT1G

TRANS PREBIAS PNP 50V SOT23-3

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規格

Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMUN2113

概述

Description

MMUN2113LT1G is a course typically focused on the fundamentals of Model United Nations (MUN) and international diplomacy. It aims to equip students with skills in negotiation, public speaking, and critical thinking through simulations of UN proceedings. Participants learn about global issues, the structure of the UN, and the roles of different member states.
The course often emphasizes research methodologies, effective communication, and the art of resolution writing, preparing students for participation in MUN conferences. Additionally, students gain insights into international relations, policy-making processes, and the importance of multilateral cooperation in addressing global challenges. Overall, MMUN2113LT1G serves as a foundational experience for those interested in international affairs, diplomacy, and global governance.

Features

The MMUN2113LT1G is a low-dropout (LDO) linear voltage regulator designed for efficient power management in various electronic applications. Key features include:
1. Output Voltage: Typically provides a fixed output voltage of 1.2V, suitable for powering low-voltage devices.
2. Input Voltage Range: Accepts input voltages from 2.5V to 5.5V, allowing flexibility in various power supply configurations.
3. Low Dropout Voltage: Offers a low dropout voltage, typically around 0.1V at a certain load, enabling efficient operation even with minimal input-output voltage differential.
4. Output Current: Capable of delivering up to 300mA of output current, suitable for powering a range of low-power applications.
5. Thermal Protection: Includes built-in thermal shutdown and current limiting features for enhanced reliability and protection against overheating.
6. Compact Package: Available in a small SOT-23 package, facilitating space-saving designs in modern electronic circuits.
These features make the MMUN2113LT1G ideal for use in battery-operated devices, portable electronics, and other applications requiring stable voltage regulation.

Package

The MMUN2113LT1G is packaged in a SOT-363 (6-lead) surface mount package type.

Pinout

The MMUN2113LT1G is a N-channel MOSFET packaged in a SOT-23-3 configuration. It has a total of 3 pins.
Here are the pin functions:
1. Gate (G): Controls the switching of the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The output terminal where the current flows out when the MOSFET is in the on state.
3. Source (S): The input terminal where the current flows into the device.
This device is commonly used in low-side switching applications, such as in power management, load switching, and various digital circuits. Its compact size and efficiency make it suitable for space-constrained applications.

Manufacturer

The MMUN2113LT1G is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. Founded in 1999, ON Semiconductor designs and produces a wide range of electronic components, including analog, logic, and power management devices. The company focuses on providing innovative solutions for various applications, such as automotive, industrial, and consumer electronics. ON Semiconductor is known for its commitment to sustainability and energy efficiency, producing products that support the growing demand for green technologies.

Application

The MMUN2113LT1G is a compact, low-power dual-channel operational amplifier (op-amp) used in applications such as signal conditioning, audio processing, active filters, and sensor signal amplification. Its features make it suitable for consumer electronics, medical devices, industrial automation, and instrumentation systems, where high performance and efficiency are required.

Equivalent

The MMUN2113LT1G is a dual N-channel MOSFET. Equivalent products include BSS138, 2N7000, and BS170. Additionally, you may consider alternatives from manufacturers like Infineon or Vishay, which may have similar specifications in terms of voltage, current ratings, and package type. Always check datasheets for specific electrical characteristics to ensure compatibility.

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