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MMBT5401LT1G

Name: MMBT5401LT1G
Rating: 4.7 (12 reviews)

TRANS PNP 150V 0.5A SOT23-3

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包 SOT23
資料表 MMBT5401LT1G DataSheet
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規格

Package	Bulk
ProductStatus	Active
TransistorType	PNP
Current-Collector(Ic)(Max)	500 mA
Voltage-CollectorEmitterBreakdown(Max)	150 V
VceSaturation(Max)@IbIc	500mV @ 5mA, 50mA
Current-CollectorCutoff(Max)	50nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	60 @ 10mA, 5V
Power-Max	300 mW
Frequency-Transition	300MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

概述

Description

The MMBT5401LT1G is a general-purpose NPN transistor designed for various electronic applications. It is commonly used in switching and amplification tasks due to its reliable performance and efficiency. This transistor features a maximum collector current of 600 mA and a collector-emitter voltage rating of 50 V, making it suitable for low to medium power applications.
The device comes in a compact SOT-23 package, allowing for easy integration into circuit designs while saving space. It operates at a maximum junction temperature of 150°C, which enhances its thermal stability.
Key characteristics include a low saturation voltage and a high current gain (hFE), making it ideal for signal amplification. The MMBT5401LT1G is widely used in consumer electronics, automotive applications, and industrial equipment. Its robust construction ensures durability and reliability in various operating conditions.
Overall, the MMBT5401LT1G is a versatile and efficient transistor choice for engineers and hobbyists alike.

Features

The MMBT5401LT1G is a NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. Key features include:
1. Collector-Emitter Voltage (Vce): Rated up to 60V, allowing for high-voltage applications.
2. Collector Current (Ic): Maximum continuous collector current of 1A, suitable for moderate current applications.
3. Power Dissipation: Capable of dissipating up to 625mW, ensuring reliable operation in power-sensitive circuits.
4. DC Current Gain (hFE): Offers a gain range of 100 to 300, providing effective amplification.
5. Frequency Response: Transition frequency (fT) is typically around 250MHz, allowing for RF applications.
6. Package: Available in a TO-92 package, making it suitable for space-constrained designs.
7. Temperature Range: Operates reliably within a temperature range of -55°C to +150°C.
Overall, the MMBT5401LT1G is versatile for both analog and digital applications, especially in consumer electronics, automotive, and industrial sectors.

Package

The MMBT5401LT1G is packaged in a SOT-23 surface-mount package. This compact package design is suitable for space-constrained applications in electronic circuits.

Pinout

The MMBT5401LT1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It has three pins, which serve the following functions:
1. Collector (C): This pin is used to collect the majority charge carriers (electrons) from the emitter. It is typically connected to the load in the circuit.
2. Base (B): This pin controls the transistor's operation by allowing a small current to flow into the base, enabling a larger current to flow from the collector to the emitter.
3. Emitter (E): This pin emits charge carriers into the base and is connected to the ground or negative voltage in most configurations.
The MMBT5401LT1G is commonly used in switching and amplification applications.

Manufacturer

The MMBT5401LT1G is manufactured by ON Semiconductor, a prominent semiconductor manufacturer. ON Semiconductor specializes in a wide range of products, including analog and mixed-signal integrated circuits, discrete components, and power management solutions. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Founded in 1960, ON Semiconductor has established itself as a key player in the global semiconductor market, focusing on energy-efficient solutions and innovative technologies.

Application

The MMBT5401LT1G is a general-purpose NPN bipolar junction transistor (BJT) typically used in low to medium power switching and amplification applications. Common areas of application include signal amplification in audio devices, switching circuits in power supplies, relay drivers, and digital logic interfacing. Its compact surface-mount package makes it suitable for space-constrained designs in consumer electronics, telecommunications, and industrial automation.

Equivalent

The MMBT5401LT1G is an NPN bipolar junction transistor (BJT). Equivalent products include the 2N5551, BC547, and 2N4401. For specific applications, check datasheets for similar electrical characteristics, such as current rating, voltage rating, and gain. Always confirm suitability for your particular circuit requirements.