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MMBT3906TT1G
TRANS PNP 40V 0.2A SC75 SOT416
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- 製造商。 部分 #MMBT3906TT1G
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 200 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 40 V |
| VceSaturation(Max)@IbIc | 400mV @ 5mA, 50mA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 10mA, 1V |
| Power-Max | 200 mW |
| Frequency-Transition | 250MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SC-75, SOT-416 |
概述
Description
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) designed for low-power switching and amplification applications. It features a maximum collector current of 800 mA and a collector-emitter voltage of up to 40V, making it suitable for a variety of electronic circuits. This transistor operates efficiently in the frequency range of up to 250 MHz, providing versatility in different applications.
The MMBT3906 is packaged in a small SOT-23 form factor, which allows for easy integration into compact designs. Its characteristics include low saturation voltage and fast switching speeds, making it ideal for signal processing in audio and RF applications, as well as in power management circuits.
Overall, the MMBT3906TT1G is a reliable choice for engineers looking for a robust PNP transistor suitable for both consumer electronics and industrial applications.
The MMBT3906 is packaged in a small SOT-23 form factor, which allows for easy integration into compact designs. Its characteristics include low saturation voltage and fast switching speeds, making it ideal for signal processing in audio and RF applications, as well as in power management circuits.
Overall, the MMBT3906TT1G is a reliable choice for engineers looking for a robust PNP transistor suitable for both consumer electronics and industrial applications.
Features
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Type: PNP transistor.
2. Package: SOT-23, which provides a compact footprint suitable for space-constrained applications.
3. Voltage Ratings: Maximum collector-emitter voltage (Vce) of 40V, making it suitable for low to medium voltage applications.
4. Current Ratings: Maximum collector current (Ic) of 800 mA, allowing for moderate power handling.
5. Gain: High current gain (hFE) typically in the range of 100 to 300, facilitating effective amplification.
6. Switching Speed: Fast switching times, making it suitable for high-speed applications.
7. Thermal Resistance: Good thermal stability with a junction temperature rating up to 150°C.
8. Applications: Ideal for use in signal amplification, audio equipment, and general-purpose switching tasks.
Overall, the MMBT3906TT1G is versatile, reliable, and commonly used in consumer electronics and various circuit designs.
1. Type: PNP transistor.
2. Package: SOT-23, which provides a compact footprint suitable for space-constrained applications.
3. Voltage Ratings: Maximum collector-emitter voltage (Vce) of 40V, making it suitable for low to medium voltage applications.
4. Current Ratings: Maximum collector current (Ic) of 800 mA, allowing for moderate power handling.
5. Gain: High current gain (hFE) typically in the range of 100 to 300, facilitating effective amplification.
6. Switching Speed: Fast switching times, making it suitable for high-speed applications.
7. Thermal Resistance: Good thermal stability with a junction temperature rating up to 150°C.
8. Applications: Ideal for use in signal amplification, audio equipment, and general-purpose switching tasks.
Overall, the MMBT3906TT1G is versatile, reliable, and commonly used in consumer electronics and various circuit designs.
Package
The MMBT3906TT1G is packaged in a SOT-23 form factor, which is a small surface-mount package suitable for space-constrained applications.
Pinout
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) with a total of three pins. The pin configuration is as follows:
1. Emitter (E) - This is the terminal through which current flows out of the transistor.
2. Base (B) - This terminal controls the transistor's operation and allows it to switch or amplify the current.
3. Collector (C) - This is the terminal through which current enters the transistor.
The MMBT3906 is commonly used for general-purpose amplification and switching applications. It features low power dissipation and is suitable for use in a variety of electronic circuits. The device is available in a small SOT-23 package, making it suitable for compact designs.
1. Emitter (E) - This is the terminal through which current flows out of the transistor.
2. Base (B) - This terminal controls the transistor's operation and allows it to switch or amplify the current.
3. Collector (C) - This is the terminal through which current enters the transistor.
The MMBT3906 is commonly used for general-purpose amplification and switching applications. It features low power dissipation and is suitable for use in a variety of electronic circuits. The device is available in a small SOT-23 package, making it suitable for compact designs.
Manufacturer
The MMBT3906TT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including analog, logic, power, and discrete components. The MMBT3906TT1G is a general-purpose PNP transistor used in various electronic applications for switching and amplification. The company focuses on serving various industries, including automotive, industrial, and consumer electronics, and is known for its commitment to innovation and energy-efficient solutions.
Application
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) commonly used in various applications, including signal amplification, switching circuits, and level shifting in electronic devices. It is suitable for low to medium power applications, such as audio amplifiers, general-purpose amplification, and as a driver for small loads in consumer electronics. Its compact surface-mount package makes it ideal for space-constrained designs in mobile and portable applications.
Equivalent
The MMBT3906TT1G is a PNP bipolar junction transistor (BJT). Equivalent products include:
1. 2N2907
2. 2N5087
3. MMBT3906
4. BC557
Always verify specifications and ratings to ensure compatibility for your application.
1. 2N2907
2. 2N5087
3. MMBT3906
4. BC557
Always verify specifications and ratings to ensure compatibility for your application.
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