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MMBF2201NT1G

Name: MMBF2201NT1G
Rating: 4.7 (12 reviews)

MOSFET N-CH 20V 300MA SC70-3

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資料表 MMBF2201NT1G DataSheet
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規格

Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	45 pF @ 5 V
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-3 (SOT323)
Package / Case	SC-70, SOT-323
Base Product Number	MMBF2201

概述

Description

The MMBF2201NT1G is a low-noise N-channel MOSFET designed for various applications, including signal amplification and switching. It features low on-resistance and high-speed operation, making it suitable for RF and analog circuits. With a maximum drain-source voltage (V_DS) of 60V and a maximum continuous drain current (I_D) of 300mA, it is capable of handling moderate power levels.
This MOSFET is often packaged in a SOT-23 (Surface Mount Technology) configuration, which facilitates easy integration into compact designs. Its low gate threshold voltage (V_GS(th)) allows for effective control with low-voltage signals, making it ideal for battery-operated devices.
The MMBF2201NT1G is widely used in consumer electronics, telecommunications, and other applications requiring efficient and reliable MOSFET performance. Overall, it offers a balance of efficiency, performance, and versatility for modern electronic circuit designs.

Features

The MMBF2201NT1G is a dual N-channel MOSFET designed for low power applications. Here are its key features:
1. Configuration: Dual N-channel MOSFET in a surface mount SOT-23 package.
2. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V.
3. Current Rating: Continuous drain current (I_D) up to 200mA.
4. R_DS(on): Low on-resistance (typically around 0.8 ohms), improving efficiency with reduced power loss.
5. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) in the range of 1V to 3V, ensuring compatibility with low-voltage control signals.
6. Fast Switching: Suitable for high-speed switching applications.
7. Applications: Commonly used in power management, load switching, and battery-powered devices.
This MOSFET is ideal for low voltage and low current applications, providing reliable performance with minimal thermal management requirements.

Package

The MMBF2201NT1G is packaged in a SOT-23 (Surface Mount) package type.

Pinout

The MMBF2201NT1G is a dual N-channel MOSFET in a SOT-23 package. It features a total of 6 pins, with the following functions:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
This device is typically used in low-voltage applications, such as switching and amplifying signals in electronic circuits. It offers low on-resistance and fast switching speeds, making it suitable for various electronic applications.

Manufacturer

The manufacturer of the MMBF2201NT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components and systems. The company specializes in applications such as power management, signal processing, and analog devices, serving various sectors including automotive, industrial, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient solutions and has a strong commitment to innovation and sustainability in the semiconductor industry.

Application

The MMBF2201NT1G is a N-channel MOSFET primarily used in low-power switching applications, such as in battery-powered devices, portable electronics, and signal amplification. It is commonly found in power management circuits, load switching, and signal routing within RF applications. Additionally, it can be used in audio amplifiers and as a general-purpose switch in various electronic designs.

Equivalent

The MMBF2201NT1G is a N-channel JFET transistor. Equivalent products include the 2N5457, 2N5485, and J310 JFET transistors. These alternatives may have similar specifications but ensure to verify the datasheets for specific parameters like voltage, current, and gate characteristics to ensure compatibility for your application.