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MJD47T4G
TRANS NPN 250V 1A DPAK
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- 資料表 MJD47T4G DataSheet
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規格
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56 W |
| Frequency - Transition | 10MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Base Product Number | MJD47 |
概述
Description
MJD47T4G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is commonly used in various electronic circuits, including power management, motor control, and amplification. The device features low on-resistance, enabling efficient power dissipation and higher performance in switching applications.
Key specifications often include a maximum drain-source voltage (VDS) and a maximum continuous drain current (ID), making it suitable for high power applications. The MJD47T4G is known for its fast switching speeds, which contribute to improved efficiency in circuits.
It is available in various packaging options, which can affect thermal management and mounting characteristics. Proper thermal management is essential to ensure reliable operation, especially in high-current applications.
Overall, MJD47T4G is a versatile component widely used in the electronics industry for its efficient performance in power and signal applications.
Key specifications often include a maximum drain-source voltage (VDS) and a maximum continuous drain current (ID), making it suitable for high power applications. The MJD47T4G is known for its fast switching speeds, which contribute to improved efficiency in circuits.
It is available in various packaging options, which can affect thermal management and mounting characteristics. Proper thermal management is essential to ensure reliable operation, especially in high-current applications.
Overall, MJD47T4G is a versatile component widely used in the electronics industry for its efficient performance in power and signal applications.
Features
The MJD47T4G is a high-performance N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of around 55V, allowing it to handle a wide range of applications.
2. Current Handling: With a continuous drain current (Id) rating often around 60A, it provides robust performance in high-load situations.
3. On-Resistance (Rds(on)): This MOSFET boasts a low on-resistance, generally in the milli-ohm range, which minimizes power loss and enhances efficiency.
4. Fast Switching Speed: Designed for rapid switching applications, making it suitable for use in converters and inverters.
5. Thermal Performance: Features a good thermal resistance, allowing for effective heat dissipation during operations.
6. Package Options: Typically available in TO-220 or similar packages, facilitating easy integration into various circuit designs.
Overall, the MJD47T4G is ideal for automotive, industrial, and consumer electronics applications requiring efficient power management.
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of around 55V, allowing it to handle a wide range of applications.
2. Current Handling: With a continuous drain current (Id) rating often around 60A, it provides robust performance in high-load situations.
3. On-Resistance (Rds(on)): This MOSFET boasts a low on-resistance, generally in the milli-ohm range, which minimizes power loss and enhances efficiency.
4. Fast Switching Speed: Designed for rapid switching applications, making it suitable for use in converters and inverters.
5. Thermal Performance: Features a good thermal resistance, allowing for effective heat dissipation during operations.
6. Package Options: Typically available in TO-220 or similar packages, facilitating easy integration into various circuit designs.
Overall, the MJD47T4G is ideal for automotive, industrial, and consumer electronics applications requiring efficient power management.
Package
The MJD47T4G is typically packaged in a TO-220 form factor. This package type is designed for high-power applications, providing good thermal dissipation and ease of mounting.
Pinout
The MJD47T4G is a NPN bipolar junction transistor (BJT) designed for high-speed switching applications. It typically comes in a TO-220 package, which has a pin count of three. The pin functions are as follows:
1. Collector (C) - Pin 1: Connected to the load. This is where the output current flows.
2. Base (B) - Pin 2: The control pin that regulates the current flow from collector to emitter. It acts as the input to turn the transistor on or off.
3. Emitter (E) - Pin 3: The pin through which the current exits the transistor. This is connected to the ground in most applications.
The MJD47T4G is commonly used in power switching applications, such as amplifiers and drivers for inductive loads.
1. Collector (C) - Pin 1: Connected to the load. This is where the output current flows.
2. Base (B) - Pin 2: The control pin that regulates the current flow from collector to emitter. It acts as the input to turn the transistor on or off.
3. Emitter (E) - Pin 3: The pin through which the current exits the transistor. This is connected to the ground in most applications.
The MJD47T4G is commonly used in power switching applications, such as amplifiers and drivers for inductive loads.
Manufacturer
The MJD47T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and mixed-signal devices, as well as sensors and connectivity products. The company serves various industries, such as automotive, industrial, consumer electronics, and communications. With a focus on energy efficiency and sustainability, ON Semiconductor plays a significant role in advancing technology for a more connected and efficient world.
Application
MJD47T4G is a high-voltage NPN power transistor primarily used in applications such as audio amplification, power management, and switching power supplies. It is suitable for driving motors, relays, and other inductive loads, as well as in inverter circuits and high-frequency applications. Its robust performance makes it ideal for automotive and industrial applications, where reliability and efficiency are critical.
Equivalent
The MJD47T4G is a N-channel MOSFET used in power applications. Equivalent products include:
1. IRF540
2. STP55NF06
3. FQP50N06
4. PSMN1R8-80BS
Always verify specifications like voltage, current ratings, and package types before substitution.
1. IRF540
2. STP55NF06
3. FQP50N06
4. PSMN1R8-80BS
Always verify specifications like voltage, current ratings, and package types before substitution.
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