M29W128GH7AN6E

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M29W128GH7AN6E

IC FLASH 128MBIT PARALLEL 56TSOP

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規格

Part Status Obsolete
Base Product Number M29W128
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mbit
Memory Organization 16M x 8, 8M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 70 ns

概述

Description

The M29W128GH7AN6E is a NAND flash memory device produced by STMicroelectronics. It offers a storage capacity of 128 megabits (16 megabytes) and is designed for high-performance applications requiring non-volatile memory. This device utilizes a serial interface for communication, making it suitable for embedded systems, consumer electronics, and automotive applications.
Key features include high-speed read and write operations, low power consumption, and the ability to endure a significant number of program/erase cycles, enhancing its longevity. The M29W128GH7AN6E also supports advanced error correction and wear leveling techniques, ensuring data integrity and reliability over time. It is packaged in a compact form factor, allowing for easy integration into various electronic designs.
Overall, the M29W128GH7AN6E is ideal for applications that require fast and reliable data storage, including firmware updates, multimedia content storage, and configuration settings.

Features

The M29W128GH7AN6E is a 128 Mb (16 MB) NOR Flash memory device, primarily used in embedded applications. Key features include:
1. Memory Architecture: It employs a parallel interface with a 16-bit wide data bus, allowing for efficient data transfer.
2. Access Time: The device offers fast read access times, typically around 70 ns or faster, making it suitable for high-speed applications.
3. Programming: It supports Byte or Word programming modes, with a typical programming time of about 20 µs per byte.
4. Erase Capability: The memory supports sector erase, allowing for selective erasure of memory regions, and has a typical erase time of 0.5 seconds for sectors.
5. Endurance: It features a high endurance of around 100,000 write/erase cycles per sector.
6. Data Retention: The device guarantees data retention up to 20 years at 85°C.
7. Supply Voltage: Operates on a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
These features make the M29W128GH7AN6E ideal for automotive, industrial, and consumer electronics.

Package

The M29W128GH7AN6E is packaged in a TSOP (Thin Small Outline Package), specifically a TSOP-48. This package type is designed for surface mount applications, allowing for a compact footprint on printed circuit boards.

Pinout

The M29W128GH7AN6E is a 128 Mb (16 MB) flash memory device with a pin count of 48. This device utilizes the TSOP (Thin Small Outline Package) form factor. Its primary functions include:
1. Memory Storage: It provides non-volatile storage for data and firmware.
2. Read and Write Operations: Supports asynchronous read and write operations, allowing for quick data retrieval and updates.
3. Program and Erase: Features sector-based programming and block erase capabilities, enabling selective data modification.
4. Access Time: Offers fast access times suitable for various applications, including consumer electronics and automotive systems.
This device is commonly used in applications requiring reliable and efficient storage solutions.

Manufacturer

The manufacturer of the M29W128GH7AN6E is Macronix International Co., Ltd. Macronix is a semiconductor company based in Taiwan, specializing in the design and production of non-volatile memory solutions, including NOR Flash and NAND Flash memory products. Established in 1989, the company focuses on providing memory solutions for a variety of applications, including consumer electronics, automotive, industrial, and networking sectors. Macronix is recognized for its advanced technology and manufacturing capabilities, making it a significant player in the global semiconductor market.

Application

The M29W128GH7AN6E is a 128Mb Flash memory device primarily used in applications such as consumer electronics, automotive systems, industrial control, networking equipment, and telecommunications. Its features make it suitable for firmware storage, code execution, and data retention in devices like smartphones, tablets, embedded systems, and IoT products.

Equivalent

The M29W128GH7AN6E chip is a 128Mb (16MB) NOR Flash memory. Equivalent products include:
1. Micron MT28EW128ABA
2. Spansion S29GL128N
3. Winbond W25Q128
4. Intel E28F128J3A
Always verify compatibility based on specific application requirements such as voltage, speed, and interface.

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