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LTC4446EMS8E#PBF
IC GATE DRVR HALF-BRIDGE 8MSOP
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規格
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 7.2V ~ 13.5V |
| LogicVoltage-VILVIH | 1.85V, 3.25V |
| Current-PeakOutput(SourceSink) | 2.5A, 3A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 114 V |
| Rise/FallTime(Typ) | 8ns, 5ns |
| OperatingTemperature | -40°C ~ 85°C |
| MountingType | Surface Mount |
| Package/Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad |
概述
Description
The LTC4446EMS8E#PBF is a dual MOSFET gate-driver IC from Linear Technology (now Analog Devices). It provides two independent gate drivers to drive a pair of N‑channel MOSFETs in a half‑bridge or two separate channels, suitable for switching regulators, buck/boost converters, and motor drives. The high‑side driver uses a bootstrap supply, enabling gate drive above the input supply, while the low‑side driver references ground. It includes protections such as undervoltage lockout, shoot‑through prevention, and dead‑time control, and accepts CMOS/TTL‑level logic inputs to rapidly source/sink gate currents. The EMS8E suffix denotes an 8‑pin RoHS‑compliant package (MSOP/DFN style), and #PBF indicates Pb‑free packaging. Typical pins: Vcc, Gnd, IN1/IN2, HO/LO outputs, and VB/VS for the high‑side bootstrap.
Features
LTC4446EMS8E#PBF features (concise):
- Dual high-side/low-side MOSFET gate drivers for synchronous buck/boost topologies
- Bootstrapped high-side supply for N-channel MOSFETs
- Independent input/output channels with push-pull drive
- Enable input for each channel
- Undervoltage lockout on both drivers
- Shoot-through protection with dead-time control
- Overcurrent/short-circuit protection
- Suitable for high-speed, high-efficiency switching applications
- 8-lead EMS8E Pb-free package
Note: For exact electrical specs (drive strength, voltage range, timing, etc.), refer to the official datasheet.
- Dual high-side/low-side MOSFET gate drivers for synchronous buck/boost topologies
- Bootstrapped high-side supply for N-channel MOSFETs
- Independent input/output channels with push-pull drive
- Enable input for each channel
- Undervoltage lockout on both drivers
- Shoot-through protection with dead-time control
- Overcurrent/short-circuit protection
- Suitable for high-speed, high-efficiency switching applications
- 8-lead EMS8E Pb-free package
Note: For exact electrical specs (drive strength, voltage range, timing, etc.), refer to the official datasheet.
Package
An 8-pin MSOP (Plastic Small-Outline) package, RoHS lead-free (PBF).
Pinout
Pin count: 8 pins (EMS8E indicates an 8-pin package).
Function: LTC4446EMS8E#PBF is a dual MOSFET gate-driver IC (two outputs) used to drive a high-side and a low-side N-channel MOSFET in a half-bridge topology. It provides gate drive with features such as level shifting/bootstrapping, undervoltage lockout, and enable/dead-time control typical of high-voltage switching regulators.
Function: LTC4446EMS8E#PBF is a dual MOSFET gate-driver IC (two outputs) used to drive a high-side and a low-side N-channel MOSFET in a half-bridge topology. It provides gate drive with features such as level shifting/bootstrapping, undervoltage lockout, and enable/dead-time control typical of high-voltage switching regulators.
Manufacturer
- Manufacturer: Analog Devices, Inc. (ADI).
- Company type: American multinational semiconductor company specializing in analog, mixed-signal, and DSP integrated circuits; owner of the Linear Technology product line (LTC) since acquiring Linear Technology in 2017.
- Company type: American multinational semiconductor company specializing in analog, mixed-signal, and DSP integrated circuits; owner of the Linear Technology product line (LTC) since acquiring Linear Technology in 2017.
Application
LTC4446EMS8E#PBF 主要用于高效 DC-DC 转换中的 MOSFET 门极驱动与控制,适合多相 Buck/Boost 电源。典型应用包括:CPU/GPU/FPGA 等 VRM 与数据中心服务器的点对载电源;通信、网络与工业电源模块;汽车及车载电源管理系统;以及需要高效多相变换器的功率模块和可编程电源。
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